US5016083A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Submount for semiconductor laser device
Assignee: Mitsubishi Electric Corp
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Filing: 1990-06-27
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Granted: 1991-05-14
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Expires: 2010-06-27
Abstract
Abstract A semiconductor laser device submount disposed between a semiconductor laser chip and a metal block for securing them together includes a metallization structure on each of two opposing surfaces of an Sb-doped submount body. The metallization includes a first Au layer on the surface of the body, an AuSb layer on the first Au layer, and a second Au layer on the AuSb layer.
Inventors
- 👤 Mitsuo Ishii
- 👤 Hidenori Nishihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:32
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/253; H10W70/00; H10W70/20; H10W72/00; H10W72/30; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/0235; H01S5/02355; H01S5/0237; H01S5/04; H01S5/042; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
65 words
A semiconductor laser device submount for securing a semiconductor laser chip to a metal block comprising: a submount body doped with Sb; and a metallization structure disposed on each of two opposing surfaces of said Sb-doped submount body, said metallization structure comprising a first Au layer, an AuSb layer, and a second Au layer sequentially disposed in the named order on each of the surfaces.
Claim 2
Dependent Claim
65 words
A semiconductor laser device submount for securing a semiconductor laser chip to a metal block comprising: a submount body doped with Sb; and a metallization structure disposed on each of two opposing surfaces of said Sb-doped submount body, said metallization structure comprising a first Au layer, an AuSb layer, and a second Au layer sequentially disposed in the named order on each of the surfaces.
Claim 3
Dependent Claim
18 words
A semiconductor laser device submount according to claim 1 wherein the submount body is Si doped with Sb.
Claim 4
Dependent Claim
40 words
A semiconductor laser device submount according to claim 1 wherein the first Au layer has a thickness of 0.2±0.04 μ, the AuSb layer has a thickness of 0.2±0.04 μ, and the second Au layer has a thickness of 5±1 μ.
Claim 5
Dependent Claim
71 words
A semiconductor laser device submount according to claim 2 wherein during heat treatment for securing the laser chip to the metal block, an AuSi eutectic solder layer is formed on each of the opposing surfaces of the Si submount body, and Sb in the Sb-doped Si submount body in the AuSb layer is diffused and uniformly mixed into said AuSi eutectic solder layers to thereby form homogeneous AuSiSb eutectic solder layers.
Claim 6
Dependent Claim
25 words
A semiconductor laser device submount according to claim 2 wherein the Si submount body is doped with from 0.11 to 0.21 weight percent of Sb.
Claim 7
Dependent Claim
22 words
A semiconductor laser device submount according to claim wherein the Sb-doped Si submount body has a resistivity of from to 0.017 Ω.cm.
References Cited (Backward Citations)
JPS5842285A
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JPS5858786A
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JPS5891692A
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JPS6052079A
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JPS60103860A
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JPS6210461A
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US4947238A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-13 | 1994-11-12 | 1995-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-13 | 1998-11-12 | 1999-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-13 | 2002-11-12 | 2003-05-14 | $7700.00 | Window Closed / Lapsed |