US5016064A
Expired / Lapsed
US
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Quantom well structure having enhanced conductivity
Assignee: NXP USA Inc
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Filing: 1989-09-25
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Granted: 1991-05-14
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Expires: 2009-09-25
Abstract
Abstract An enhanced conductivity superlattice made from semiconductor materials provides enhanced conductivity. It is believed that conductivity can be enhanced sufficiently to produce superconductivity well above typical superconductivity temperatures of the semiconductor materials. The enhanced conductivity quantum well is a superlattice structure having a monolayer phonon generator sandwiched between layers of a host material. Barrier layers surround the host material to confine the host material electrons. In another embodiment, the monolayer may be located within the barrier layers. The monolayer generates phonons having an optical energy which is lower than the optical energy of the host material. The generated phonons couple with low energy electrons or holes to propagate without dissipation of electron energy.
Inventors
- 👤 Herbert Goronkin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:22
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10D62/82
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
84 words
An enhanced conductivity III-V compund semiconductor comprising: a barrier layer; a first layer of material positioned on the barrier layer and having optical phonons at a predetermined energy level; a monoatomic layer positioned over the first layer and having optical phonons at an energy level lower than the energy level of the phonons of the first layer; and a second layer of material positioned on the monoatomic layer and having optical phonons at substantially the same energy level as the first layer of material.
Claim 2
Dependent Claim
84 words
An enhanced conductivity III-V compund semiconductor comprising: a barrier layer; a first layer of material positioned on the barrier layer and having optical phonons at a predetermined energy level; a monoatomic layer positioned over the first layer and having optical phonons at an energy level lower than the energy level of the phonons of the first layer; and a second layer of material positioned on the monoatomic layer and having optical phonons at substantially the same energy level as the first layer of material.
Claim 3
Dependent Claim
27 words
The enhanced conductivity compound semiconductor of claim 1 wherein the barrier layer comprises AlGaAs, the first and second layers comprise GaAs, and the monoatomic layer comprises silicon.
Claim 4
Dependent Claim
31 words
The enhanced conductivity compound semiconductor of claim 1 wherein the barrier layer serves to confine electrons to a quantum well formed by the first and second layers and the monoatomic layer.
Claim 5
Dependent Claim
74 words
An enhanced conductivity compound semiconductor having a plurality of quantum wells, each quantum well being separated by a barrier layer, and each quantum well comprising a first and a second layer of semi-insulating material having phonons at a predetermined energy level; and a monoatomic layer located in between the first and the second layers and having phonons with an optical energy level lower than the optical energy level of the first and second layers.
Claim 6
Dependent Claim
74 words
An enhanced conductivity compound semiconductor having a plurality of quantum wells, each quantum well being separated by a barrier layer, and each quantum well comprising a first and a second layer of semi-insulating material having phonons at a predetermined energy level; and a monoatomic layer located in between the first and the second layers and having phonons with an optical energy level lower than the optical energy level of the first and second layers.
Claim 7
Dependent Claim
16 words
The enhanced conductivity compound semiconductor of claim 4 wherein the monoatomic layer comprises a semiconducting material.
Claim 8
Dependent Claim
16 words
The enhanced conductivity compound semiconductor of claim 4 wherein the semi-insulating material comprises III-V compound material.
Claim 9
Dependent Claim
14 words
The enhanced conductivity compound semiconductor of claim 5 wherein the semiconducting material comprises silicon.
Claim 10
Dependent Claim
38 words
A synthetic enhanced conductivity compound semiconductor having a superlattice structure and comprising: a phonon generator; and a host material having at least two layers, wherein the phonon generator is sandwiched between the two layers of the host material.
Claim 11
Dependent Claim
38 words
A synthetic enhanced conductivity compound semiconductor having a superlattice structure and comprising: a phonon generator; and a host material having at least two layers, wherein the phonon generator is sandwiched between the two layers of the host material.
Claim 12
Dependent Claim
33 words
The synthetic enhanced conductivity compound semiconductor of claim 8 wherein the phonon generator generates phonons having optical energies lower than optical energies and greater than acoustical energies of phonons of the host material.
Claim 13
Dependent Claim
27 words
The synthetic enhanced conductivity compound semiconductor of claim 8 further including a barrier layer to prevent electrons from the host material from escaping the superlattice quantum wells.
Claim 14
Dependent Claim
21 words
A III-V compound semiconductor structure having at least one barrier layer with a monolayer in the barrier layer producing optical phonons.
Claim 15
Dependent Claim
21 words
A III-V compound semiconductor structure having at least one barrier layer with a monolayer in the barrier layer producing optical phonons.
Claim 16
Dependent Claim
16 words
The III-V compound semiconductor of claim 11 wherein the monolayer comprises acceptor atoms to produce holes.
Claim 17
Dependent Claim
22 words
The III-V compound semiconductor of claim 11 wherein the barrier layers are epitaxially grown single crystal insulators which are void of oxygen.
Claim 18
Dependent Claim
57 words
A synthetic enhanced conductivity compound semiconductor having a superlattice and a monolayer, the superlattice having a crystal lattice and quantum wells and wherein the monolayer has electrically inactive atoms in the crystal lattice of the superlattice which produces optical phonons, and charge carriers and generated by illumination or introduced by ohmic contacts to the superlattice quantum wells.
Claim 19
Dependent Claim
57 words
A synthetic enhanced conductivity compound semiconductor having a superlattice and a monolayer, the superlattice having a crystal lattice and quantum wells and wherein the monolayer has electrically inactive atoms in the crystal lattice of the superlattice which produces optical phonons, and charge carriers and generated by illumination or introduced by ohmic contacts to the superlattice quantum wells.
Claim 20
Dependent Claim
19 words
The synthetic enhanced conductivity compound semiconductor of claim 14 wherein the quantum wells are expitaxially grown single crystal metals.
Claim 21
Dependent Claim
22 words
The synthetic enhanced conductivity compound semiconductor of claim 14 wherein the quantum wells are SiGe single crystal and the barriers are silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-13 | 1994-11-12 | 1995-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-13 | 1998-11-12 | 1999-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-13 | 2002-11-12 | 2003-05-14 | $7700.00 | Window Closed / Lapsed |