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US5015747A
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Organometallic compounds
Assignee: Merck Patent GmbH
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Filing: 1988-07-26
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Granted: 1991-05-14
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Expires: 2008-07-26
Abstract
Abstract The invention relates to organometallic compounds which are stabilized intramolecularly and have a cyclic or bicyclic structure and to the use thereof for the preparation of thin films and epitaxial layers by gas phase deposition.
Inventors
- 👤 Martin Hostalek
- 👤 Ludwig Pohl
- 👤 Dietrich Erdmann
- 👤 Herbert Schumann
- 👤 Uwe Hartmann
- 👤 Meino Heyen
- 👤 Holger Jurgensen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:51
CPC Classifications
C; C07; C07F; C07F5/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
90 words
An organometallic compound of the formula I ##STR2## in which R 1 and R 2 independently of one another are each H, a straight-chain or branched alkyl group having up to 7 C atoms, which can be partially or completely fluorinated, a cycloalkyl, alkenyl or cycloalkenyl group having each 3-8 C atoms or an unsubstituted or substituted phenyl group, M is Al, In or Ga, Y is N, P, As or Sb, m is 2, 3 or 4, n and o are each 0 or 1 and n+o is 1.
Claim 2
Dependent Claim
90 words
An organometallic compound of the formula I ##STR2## in which R 1 and R 2 independently of one another are each H, a straight-chain or branched alkyl group having up to 7 C atoms, which can be partially or completely fluorinated, a cycloalkyl, alkenyl or cycloalkenyl group having each 3-8 C atoms or an unsubstituted or substituted phenyl group, M is Al, In or Ga, Y is N, P, As or Sb, m is 2, 3 or 4, n and o are each 0 or 1 and n+o is 1.
Claim 3
Dependent Claim
25 words
The use of an organometallic compound of the formula I as claimed in claim 1 for the gas phase deposition of the metal on substrates.
Claim 4
Dependent Claim
21 words
The use of an organometallic compound of the formula I as claimed in claim 1 for the decomposition of epitaxial layers.
Claim 5
Dependent Claim
54 words
A process for the preparation of thin films on substrates by gas phase decomposition of the metal from organometallic compounds, wherein the organometallic compound used is a compound of the formula I ##STR3## in which R 1 , R 2 , Y, M, m, n and o have the meanings given in claim 1.
Claim 6
Dependent Claim
37 words
The process as claimed in claim 4, wherein for the preparation of compound semiconductors one or more compounds of arsenic, antimony or phosphorus which are gaseous under the reaction conditions used are added during the deposition process.
Claim 7
Dependent Claim
26 words
The process as claimed in claim 4, wherein in addition to the organometallic compounds of the formula I doping substances are added during the deposition process.
References Cited (Backward Citations)
US4349483A
Cited
GB2123422A
Cited
EP0108469B1
Cited
WO1985004405A1
Cited
US4816594A
Cited
EP0260534A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-13 | 1994-11-12 | 1995-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-13 | 1998-11-12 | 1999-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-13 | 2002-11-12 | 2003-05-14 | $7700.00 | Window Closed / Lapsed |