Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
43 words
A semiconductor laser structure comprising an active semiconductor layer upon which a cladding layer and a mirror stack have been grown, the mirror stack comprising a plurality of semiconductor layers at least one of which is lattice-mismatched with respect to another contiguous thereto.
Claim 2
Dependent Claim
43 words
A semiconductor laser structure comprising an active semiconductor layer upon which a cladding layer and a mirror stack have been grown, the mirror stack comprising a plurality of semiconductor layers at least one of which is lattice-mismatched with respect to another contiguous thereto.
Claim 3
Dependent Claim
41 words
A laser structure in accordance with claim 1 in which every other layer in the mirror stack has a same first lattice constant and all the remaining layers in the stack have a same second lattice constant different from the first.
Claim 4
Dependent Claim
23 words
The laser structure of claim 2 in which the difference between the first and second lattice constants amounts to at least 0.30 percent.
Claim 5
Dependent Claim
24 words
The laser structure of claim 2 in which the difference between the first and second lattice constants amounts to at least about 0.20 percent.
Claim 6
Dependent Claim
17 words
The laser structure of claim 1 in which the lattice mismatch amounts to at least 0.30 percent.
Claim 7
Dependent Claim
17 words
The laser structure of claim 1 in which the lattice mismatch amounts to at least 0.20 percent.
Claim 8
Dependent Claim
41 words
The laser structure of claim 1 in which the active layer is essentially GaAs and in which the mirror-stack comprises a plurality of alternating layers of essentially AlAs and In z Ga 1-z P, where z is approximately equal to 0.55.
Claim 9
Dependent Claim
71 words
The laser structure of claim 1 further including an electrode attached to the mirror stack, and in which the active layer is essentially InGaAs which generates light having a vacuum wavelength of about 1.55 μm in response to electrical current supplied to the electrode, and in which the mirror-stack comprises a plurality of alternating layers of essentially InP and Al y In 1-y As, where y is approximately equal to 0.82.
Claim 10
Dependent Claim
13 words
The structure of claim 8 in which y is approximately equal to 0.8.
Claim 11
Dependent Claim
22 words
An optical system including the structure of claim 1 and means for utilizing optical radiation which can be emitted by the structure.
Claim 12
Dependent Claim
19 words
An optical system including the structure of claim 2 and means for utilizing optical radiation emitted by the structure.
Claim 13
Dependent Claim
19 words
An optical system including the structure of claim 3 and means for utilizing optical radiation emitted by the structure.
Claim 14
Dependent Claim
19 words
An optical system including the structure of claim 4 and means for utilizing optical radiation emitted by the structure.
Claim 15
Dependent Claim
19 words
An optical system including the structure of claim 5 and means for utilizing optical radiation emitted by the structure.
Claim 16
Dependent Claim
19 words
An optical system including the structure of claim 6 and means for utilizing optical radiation emitted by the structure.
Claim 17
Dependent Claim
19 words
An optical system including the structure of claim 7 and means for utilizing optical radiation emitted by the structure.
Claim 18
Dependent Claim
19 words
An optical system including the structure of claim 8 and means for utilizing optical radiation emitted by the structure.
Claim 19
Dependent Claim
19 words
An optical system including the structure of claim 9 and means for utilizing optical radiation emitted by the structure.