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US5008891A
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Semiconductor light-emitting devices
Assignee: Panasonic Holdings Corp
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Filing: 1990-04-10
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Granted: 1991-04-16
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Expires: 2010-04-10
Abstract
Abstract Configurations of heterostructure semiconductor lasers and LEDs are desribed which enable emission wavelengths in the blue to ultra-violet region to be achieved. The structures are based on an n-type layer formed of a (ZnCd) (SSe) II-VI semiconductor and a p-type layer formed of Cu(AlGa) (SSe) 2 or (ZnCd)Ga 2 (SSe) 4 semiconductor, epitaxially formed successively on a substrate, with each layer having an identical value of lattice constant to that of the substrate.
Inventors
- 👤 Yoshio Morita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:36
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H10H20/81; H10H20/811; H10H20/822; H01S5/327
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
120 words
A semiconductor light-emitting device comprising a substrate and a combination of semiconductor laser layers disposed on said substrate in a double heterostructure laser configuration, said layers comprising: a p-type semiconductor cladding layer formed of Cu(Al a Ga 1-a )(S b Se 1-b ) 2 where 0≦a≦1 and 0≦b≦1; an n-type semiconductor cladding layer formed of (Zn c Cd 1-c )(S d Se 1-d ), where 0≦c≦1 and 0≦d≦1; and an activation layer disposed between said n-type cladding layer and p-type cladding layer and formed of Cu(Al a Ga 1-a )(S b Se 1-b ) 2 ; each of said p-type cladding layer, n-type cladding layer and activation layer having an identical value of lattice constant to that of said substrate.
Claim 2
Dependent Claim
120 words
A semiconductor light-emitting device comprising a substrate and a combination of semiconductor laser layers disposed on said substrate in a double heterostructure laser configuration, said layers comprising: a p-type semiconductor cladding layer formed of Cu(Al a Ga 1-a )(S b Se 1-b ) 2 where 0≦a≦1 and 0≦b≦1; an n-type semiconductor cladding layer formed of (Zn c Cd 1-c )(S d Se 1-d ), where 0≦c≦1 and 0≦d≦1; and an activation layer disposed between said n-type cladding layer and p-type cladding layer and formed of Cu(Al a Ga 1-a )(S b Se 1-b ) 2 ; each of said p-type cladding layer, n-type cladding layer and activation layer having an identical value of lattice constant to that of said substrate.
Claim 3
Dependent Claim
44 words
A semiconductor light-emitting device according to claim 1, in which said substrate has one of said p-type and n-type cladding layers formed directly thereon, and is formed of a semiconductor material which is of identical conductivity type to said layer that is formed thereon.
Claim 4
Dependent Claim
18 words
A semiconductor light-emitting device according to claim 1, in which said substrate is formed of GaP or Si.
Claim 5
Dependent Claim
18 words
A semiconductor light-emitting device according to claim 2, in which said substrate is formed of GaP or Si.
Claim 6
Dependent Claim
85 words
A semiconductor light-emitting device comprising a substrate and a p-type semiconductor layer and n-type semiconductor layer formed as successive layers on said substrate, said p-type semiconductor layer being formed of Cu(Al a Ga 1-a )(S b Se 1-b ) 2 where 0≦a≦1 and 0≦b≦1, and said n-type semiconductor layer being formed of (Zn c Cd 1-c )(S d Se 1-d ), where 0≦c≦1 and 0≦d≦1, with each of said p-type and n-type layers having an identical value of lattice constant to that of said substrate.
Claim 7
Dependent Claim
85 words
A semiconductor light-emitting device comprising a substrate and a p-type semiconductor layer and n-type semiconductor layer formed as successive layers on said substrate, said p-type semiconductor layer being formed of Cu(Al a Ga 1-a )(S b Se 1-b ) 2 where 0≦a≦1 and 0≦b≦1, and said n-type semiconductor layer being formed of (Zn c Cd 1-c )(S d Se 1-d ), where 0≦c≦1 and 0≦d≦1, with each of said p-type and n-type layers having an identical value of lattice constant to that of said substrate.
Claim 8
Dependent Claim
43 words
A semiconductor light-emitting device according to claim 5, in which said substrate has one of said p-type and n-type layers formed directly thereon, and is formed of a semiconductor material which is of identical conductivity type to said layer that is formed thereon.
Claim 9
Dependent Claim
18 words
A semiconductor light-emitting device according to claim 5, in which said substrate is formed of GaP or Si.
Claim 10
Dependent Claim
18 words
A semiconductor light-emitting device according to claim 6, in which said substrate is formed of GaP or Si.
Claim 11
Dependent Claim
125 words
A semiconductor light-emitting device comprising a substrate and a combination of successive semiconductor layers disposed on said substrate in a double heterostructure laser configuration, said layers comprising: a p-type semiconductor cladding layer formed of (Zn a Cd 1-a )Ga 2 (S b Se 1-b ) 4 , where 0≦a≦1 and 0≦b≦1; an n-type semiconductor cladding layer formed of (Zn c Cd 1-c )(S d Se 1-d ), where 0≦c≦1 and 0≦d≦1; and an activation layer disposed between said n-type cladding layer and p-type cladding layer and formed of (Zn a Cd 1-a )Ga 2 (S b Se 1-b ) 4 ; each of said p-type cladding layer, n-type cladding layer and activation layer having an identical value of lattice constant to that of said substrate.
Claim 12
Dependent Claim
125 words
A semiconductor light-emitting device comprising a substrate and a combination of successive semiconductor layers disposed on said substrate in a double heterostructure laser configuration, said layers comprising: a p-type semiconductor cladding layer formed of (Zn a Cd 1-a )Ga 2 (S b Se 1-b ) 4 , where 0≦a≦1 and 0≦b≦1; an n-type semiconductor cladding layer formed of (Zn c Cd 1-c )(S d Se 1-d ), where 0≦c≦1 and 0≦d≦1; and an activation layer disposed between said n-type cladding layer and p-type cladding layer and formed of (Zn a Cd 1-a )Ga 2 (S b Se 1-b ) 4 ; each of said p-type cladding layer, n-type cladding layer and activation layer having an identical value of lattice constant to that of said substrate.
Claim 13
Dependent Claim
44 words
A semiconductor light-emitting device according to claim 9, in which said substrate has one of said p-type and n-type cladding layers formed directly thereon, and is formed of a semiconductor material which is of identical conductivity type to said layer that is formed thereon.
Claim 14
Dependent Claim
18 words
A semiconductor light-emitting device according to claim 9, in which said substrate is formed of GaP or Si.
Claim 15
Dependent Claim
18 words
A semiconductor light-emitting device according to claim 10, in which said substrate is formed of GaP or Si.
Claim 16
Dependent Claim
88 words
A semiconductor light-emitting device comprising a substrate and a p-type semiconductor layer and n-type semiconductor layer formed as successive layers on said substrate, said p-type semiconductor layer being formed of (Zn a Cd 1-a )Ga 2 (S b Se 1-b ) 4 , where 0≦a≦1 and 0≦b≦1, and said n-type semiconductor layer being formed of (Zn c Cd 1-c )(S d Se 1-d ), where 0≦c≦1 and 0≦d≦1, with each of said p-type and n-type layers having an identical value of lattice constant to that of said substrate.
Claim 17
Dependent Claim
88 words
A semiconductor light-emitting device comprising a substrate and a p-type semiconductor layer and n-type semiconductor layer formed as successive layers on said substrate, said p-type semiconductor layer being formed of (Zn a Cd 1-a )Ga 2 (S b Se 1-b ) 4 , where 0≦a≦1 and 0≦b≦1, and said n-type semiconductor layer being formed of (Zn c Cd 1-c )(S d Se 1-d ), where 0≦c≦1 and 0≦d≦1, with each of said p-type and n-type layers having an identical value of lattice constant to that of said substrate.
Claim 18
Dependent Claim
43 words
A semiconductor light-emitting device according to claim 13, in which said substrate has one of said p-type and n-type layers formed directly thereon, and is formed of a semiconductor material which is of identical conductivity type to said layer that is formed thereon.
Claim 19
Dependent Claim
18 words
A semiconductor light-emitting device according to claim 13, in which said substrate is formed of GaP or Si.
Claim 20
Dependent Claim
18 words
A semiconductor light-emitting device according to claim 14, in which said substrate is formed of GaP or Si.
References Cited (Backward Citations)
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