Patent US5008737A successfully refreshed from Google Patents.
US5008737A
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Diamond composite heat sink for use with semiconductor devices
Assignee: BP Corp North America Inc
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Filing: 1988-10-11
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Granted: 1991-04-16
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Expires: 2008-10-11
Abstract
Abstract A composite comprised of diamond particles embedded in a metal matrix is a highly satisfactory heat sink material for use with a semiconductor.
Inventors
- 👤 Robert D. Burnham
- 👤 Ricardo S. Sussmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:30
CPC Classifications
C; C22; C22C; C22C26/00; H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/254; H01; H01S; H01S5/00; H01S5/02; H01S5/024; H01S5/02476; H01S5/02484; Y; Y10; Y10S; Y10S165/00; Y10S165/905; Y10T; Y10T428/00; Y10T428/12; Y10T428/12486; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
77 words
A structure comprising a semiconductor in thermal contact with a heat-conductive composite which is comprised of a metal matrix in which diamond particles have been thoroughly mixed and embedded wherein the proportions of said diamond particles and said metal are selected to form a composite having a coefficient of thermal expansion which is substantially the same as that of said semiconductor, and wherein said diamond particles have a largest dimension which is smaller than about 3 μm.
Claim 2
Dependent Claim
77 words
A structure comprising a semiconductor in thermal contact with a heat-conductive composite which is comprised of a metal matrix in which diamond particles have been thoroughly mixed and embedded wherein the proportions of said diamond particles and said metal are selected to form a composite having a coefficient of thermal expansion which is substantially the same as that of said semiconductor, and wherein said diamond particles have a largest dimension which is smaller than about 3 μm.
Claim 3
Dependent Claim
27 words
The structure of claim 1 wherein said metal matrix is comprised of at least one metal selected from the group consisting of copper, silver, gold and aluminum.
Claim 4
Dependent Claim
43 words
The structure of claim 1 wherein said metal was in the form of a powder before being thoroughly mixed with said diamond particles, and wherein said composite was formed by hot pressing the thorough mixture of said diamond particles and said metal powder.
Claim 5
Dependent Claim
29 words
The structure of claim 1 wherein the difference between the coefficient of thermal expansion of said composite and that of said semiconductor is less than about 1×10 -6 /°C.
Claim 6
Dependent Claim
34 words
The structure of claim 1 wherein said semiconductor is comprised of a material selected from the group consisting of silicon, germanium and combinations of elements from Groups III and V of the Periodic Table.
Claim 7
Dependent Claim
43 words
A heat sink for mounting thereon the semiconductor component of a heat-dissipating electronic device, comprising: a metal matrix in which diamond particles have been thoroughly mixed and embedded, wherein said diamond particles have a largest dimension which is smaller than about 3 μm.
Claim 8
Dependent Claim
43 words
A heat sink for mounting thereon the semiconductor component of a heat-dissipating electronic device, comprising: a metal matrix in which diamond particles have been thoroughly mixed and embedded, wherein said diamond particles have a largest dimension which is smaller than about 3 μm.
Claim 9
Dependent Claim
22 words
The heat sink of claim 6 wherein said electronic device is selected from the group consisting of laser diodes and light-emitting diodes.
Claim 10
Dependent Claim
28 words
The heat sink of claim 6 wherein said metal matrix is comprised of at least one metal selected from the group consisting of copper, silver, gold and aluminum.
Claim 11
Dependent Claim
44 words
The heat sink of claim 6 wherein said metal was in the form of a powder before being thoroughly mixed with said diamond particles, and wherein said matrix was formed by hot pressing the thorough mixture of said diamond particles and said metal powder.
Claim 12
Dependent Claim
36 words
The heat sink of claim 6 wherein said semiconductor component is comprised of a material selected from the group consisting of silicon, germanium and combinations of elements from Groups III and V of the Periodic Table.
Claim 13
Dependent Claim
38 words
The heat sink of claim 6 wherein the proportions said diamond particles and said metal are selected to form a composite having a coefficient of thermal expansion which is substantially the same as that of said semiconductor component.
Claim 14
Dependent Claim
30 words
The heat sink of claim 10 wherein the difference between the coefficient of thermal expansion of said composite and that of said semiconductor is less than about 1×10 -6 /°C.
Claim 15
Dependent Claim
79 words
An electronic device which comprises a semiconductor in thermal contact with a thermally conductive composite the composite comprising: a metal matrix in which diamond particles have been thoroughly mixed and embedded, wherein the proportions of said diamond particles and said metal are selected to form a composite having a coefficient of thermal expansion which is substantially the same as that of the semiconductor, and wherein said diamond particles have a largest dimension which is smaller than about 3 μm.
Claim 16
Dependent Claim
79 words
An electronic device which comprises a semiconductor in thermal contact with a thermally conductive composite the composite comprising: a metal matrix in which diamond particles have been thoroughly mixed and embedded, wherein the proportions of said diamond particles and said metal are selected to form a composite having a coefficient of thermal expansion which is substantially the same as that of the semiconductor, and wherein said diamond particles have a largest dimension which is smaller than about 3 μm.
Claim 17
Dependent Claim
28 words
The electronic device of claim 13 wherein said metal matrix is comprised of at least one metal selected from the group consisting of copper, silver, gold and aluminum.
Claim 18
Dependent Claim
30 words
The electronic device of claim 13 wherein the difference between the coefficient of thermal expansion of said composite and that of said semiconductor is less than about 1×10 -6 /°C.
Claim 19
Dependent Claim
35 words
The electronic device of claim 13 wherein said semiconductor is comprised of a material selected from the group consisting of silicon, germanium and combinations of elements from Groups III and V of the Periodic Table.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-15 | 1994-10-15 | 1995-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-15 | 1998-10-15 | 1999-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-15 | 2002-10-15 | 2003-04-16 | $7700.00 | Window Closed / Lapsed |