Patent US5008724A successfully refreshed from Google Patents.
US5008724A
Expired / Lapsed
US
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Semiconductor device
Assignee: Toshiba Corp
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Filing: 1990-07-03
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Granted: 1991-04-16
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Expires: 2010-07-03
Abstract
Abstract A semiconductor device comprising a semiconductor substrate, a field effect transistor formed in the substrate, and a diode connected to the field effect transistor and formed on the insulation film formed on the substrate. Since the diode is electrically insulated from the substrate by the insulation film, no parasitic PNPN thyristor is formed in the semiconductor substrate. Therefore, a latch-up is prevented from occurring in the semiconductor device.
Inventors
- 👤 Koji Shirai
- 👤 Ken Kawamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:00
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/01; H10D30/021; H10D30/028; H10D8/00; H10D88/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
140 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; an element isolation-layer of a second conductivity type, said element isolation-layer dividing said semiconductor substrate into first and second parts; a first field effect transistor formed in the first part of said semiconductor substrate and having a source electrode, a drain electrode, and a gate electrode; a second field effect transistor formed in the second part of the semiconductor substrate and having a source electrode, a drain electrode and a gate electrode; an insulation film formed on said semiconductor substrate; and a diode formed on said insulation film and having an anode electrode and a cathode electrode, said anode electrode being connected to said source electrode of said first field effect transistor and said cathode electrode being connected to said drain electrode of said second field effect transistor.
Claim 2
Dependent Claim
140 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; an element isolation-layer of a second conductivity type, said element isolation-layer dividing said semiconductor substrate into first and second parts; a first field effect transistor formed in the first part of said semiconductor substrate and having a source electrode, a drain electrode, and a gate electrode; a second field effect transistor formed in the second part of the semiconductor substrate and having a source electrode, a drain electrode and a gate electrode; an insulation film formed on said semiconductor substrate; and a diode formed on said insulation film and having an anode electrode and a cathode electrode, said anode electrode being connected to said source electrode of said first field effect transistor and said cathode electrode being connected to said drain electrode of said second field effect transistor.
Claim 3
Dependent Claim
28 words
The semiconductor device according to claim 1, wherein said diode and said gate electrodes of said first and second field effect transistors are made of the same material.
Claim 4
Dependent Claim
15 words
The semiconductor device according to claim 2, wherein said material is almost single crystal silicon.
Claim 5
Dependent Claim
13 words
The semiconductor device according to claim 2, wherein said material is polycrystalline silicon.
References Cited (Backward Citations)
JPS5996761A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-04-15 | 1994-10-15 | 1995-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-15 | 1998-10-15 | 1999-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-15 | 2002-10-15 | 2003-04-16 | $7700.00 | Window Closed / Lapsed |