US5004520A
Expired / Lapsed
US
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Method of manufacturing film carrier
Assignee: Eneos Corp
•
Filing: 1989-12-01
•
Granted: 1991-04-02
•
Expires: 2009-12-01
Abstract
Abstract There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of -P 0.005-0.05 wt %, B 0.005-0.05 wt %, -Al 0.01-0.5 wt %, As 0.01-0.5 wt %, -Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, -Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, -Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, -Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, -Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, -Ag 0.01-1 wt %, Cr 0.01-1 wt %, -Hf 0.01-1 wt %, Zn 0.01-1 wt % and -Zn 0.01-1 wt % - and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followed by etching.
Inventors
- 👤 Masahiro Tsuji
- 👤 Susumu Kawauchi
- 👤 Hiroshi Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:22
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H05; H05K; H05K1/00; H05K1/02; H05K1/09; H10W70/67; H10W70/688; H10W72/00; H10W72/01; H10W72/019; H05K1/03; H05K1/0393; H05K2201/00; H05K2201/03; H05K2201/0332; H05K2201/0335; H05K2201/0355; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121; Y10T428/00; Y10T428/31504; Y10T428/31678; Y10T428/31681; Y10T428/31692
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
162 words
A method for manufacturing a film carrier for mounting semiconductor chips or other electronic components in place, said method comprising: (a) providing a roller copper alloy foil, wherein rolled copper alloy foil comprises a composition consisting essentially of a total of 0.005 to 1.5% by weight of one or more selected from the group consisting of ______________________________________
P 0.005-0.05 wt %, B 0.005-0.05
wt %,
Al 0.01-0.5 wt %, As 0.01-0.5 wt %
Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %,
Fe 0.01-0.5 wt %, In 0.01-0.5 wt %,
Mg 0.01-0.5 wt %, Mn 0.05-0.2 wt %,
Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %,
Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %,
Ag 0.01-1 wt %, Cr 0.01-1 wt %,
Hf 0.01-1 wt %, Zn 0.01-1 wt % and
Zr 0.01-1 wt %
______________________________________ and the remainder Cu with inevitable impurities, (b) laminating said rolled copper alloy foil onto a resin base film, and (c) etching said rolled copper alloy foil.
Claim 2
Independent Claim
162 words
A method for manufacturing a film carrier for mounting semiconductor chips or other electronic components in place, said method comprising: (a) providing a roller copper alloy foil, wherein rolled copper alloy foil comprises a composition consisting essentially of a total of 0.005 to 1.5% by weight of one or more selected from the group consisting of ______________________________________
P 0.005-0.05 wt %, B 0.005-0.05
wt %,
Al 0.01-0.5 wt %, As 0.01-0.5 wt %
Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %,
Fe 0.01-0.5 wt %, In 0.01-0.5 wt %,
Mg 0.01-0.5 wt %, Mn 0.05-0.2 wt %,
Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %,
Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %,
Ag 0.01-1 wt %, Cr 0.01-1 wt %,
Hf 0.01-1 wt %, Zn 0.01-1 wt % and
Zr 0.01-1 wt %
______________________________________ and the remainder Cu with inevitable impurities, (b) laminating said rolled copper alloy foil onto a resin base film, and (c) etching said rolled copper alloy foil.
Claim 3
Dependent Claim
41 words
The method according to claim 1 wherein said rolled copper alloy foil comprises a copper alloy composition consisting essentially of one or more elements selected from the group consisting of In, Sn and Ag and the remainder Cu with inevitable impurities.
Claim 4
Dependent Claim
16 words
The method according to claim 1 having an oxygen concentration of not more than 50 ppm.
Claim 5
Independent Claim
179 words
A method for manufacturing a film carrier for mounting semiconductor chips or other electronic components in place, said method comprising: (a) providing a rolled copper alloy foil, wherein said rolled copper alloy foil comprises a composition consisting essentially of a total of 0.005 to 1.5% by weight of one or more selected from the group consisting of ______________________________________
P 0.005-0.05 wt %, B 0.005-0.05
wt %,
Al 0.01-0.5 wt %, As 0.01-0.5 wt %
Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %,
Fe 0.01-0.5 wt %, In 0.01-0.5 wt %,
Mg 0.01-0.5 wt %, Mn 0.05-0.2 wt %,
Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %,
Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %,
Ag 0.01-1 wt %, Cr 0.01-1 wt %,
Hf 0.01-1 wt %, Zn 0.01-1 wt % and
Zr 0.01-1 wt %
______________________________________ and the remainder Cu with inevitable impurities, (b) strain relief annealing said rolled copper alloy foil after its final cold rolling, (c) laminating said annealed rolled copper alloy foil onto a resin base film, and (d) etching said annealed rolled copper alloy foil.
Claim 6
Independent Claim
179 words
A method for manufacturing a film carrier for mounting semiconductor chips or other electronic components in place, said method comprising: (a) providing a rolled copper alloy foil, wherein said rolled copper alloy foil comprises a composition consisting essentially of a total of 0.005 to 1.5% by weight of one or more selected from the group consisting of ______________________________________
P 0.005-0.05 wt %, B 0.005-0.05
wt %,
Al 0.01-0.5 wt %, As 0.01-0.5 wt %
Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %,
Fe 0.01-0.5 wt %, In 0.01-0.5 wt %,
Mg 0.01-0.5 wt %, Mn 0.05-0.2 wt %,
Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %,
Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %,
Ag 0.01-1 wt %, Cr 0.01-1 wt %,
Hf 0.01-1 wt %, Zn 0.01-1 wt % and
Zr 0.01-1 wt %
______________________________________ and the remainder Cu with inevitable impurities, (b) strain relief annealing said rolled copper alloy foil after its final cold rolling, (c) laminating said annealed rolled copper alloy foil onto a resin base film, and (d) etching said annealed rolled copper alloy foil.
Claim 7
Dependent Claim
39 words
The method according to claim 4 wherein said rolled copper alloy foil comprises a composition consisting essentially of one or more elements selected from the group consisting of In, Sn and Ag and the remainder Cu with inevitable impurities.
Claim 8
Dependent Claim
16 words
The method according to claim 4 having an oxygen concentration of not more than 50 ppm.
Claim 9
Dependent Claim
22 words
The method according to claim 2 wherein said rolled copper alloy foil has an oxygen content of not more than 50 ppm.
Claim 10
Dependent Claim
22 words
The method according to claim 7 wherein the oxygen content of said rolled copper alloy foil is not more than 20 ppm.
Claim 11
Dependent Claim
22 words
The method according to claim 3 wherein the oxygen content of said rolled copper alloy foil is not more than 20 ppm.
Claim 12
Dependent Claim
22 words
The method according to claim 5 wherein said rolled copper alloy foil has an oxygen content of not more than 50 ppm.
Claim 13
Dependent Claim
22 words
The method according to claim 10 wherein the oxygen content of said rolled copper alloy foil is not more than 20 ppm.
Claim 14
Dependent Claim
22 words
The method according to claim 6 wherein the oxygen content of said rolled copper alloy foil is not more than 20 ppm.
Claim 15
Independent Claim
163 words
A method for manufacturing a film carrier for mounting semi-conductor chips or other electronic components in place, said method comprising: (a) providing a rolled copper alloy foil, wherein said rolled copper alloy foil comprises a composition consisting essentially of a total of 0.005 to 1.5% by weight of one or more selected from the group consisting of ______________________________________
P 0.007-0.02
wt %, B 0.007-0.02
wt %,
Al 0.05-0.2 wt %, As 0.05-0.2
wt %,
Cd 0.05-0.2 wt %, Co 0.05-0.2
wt %,
Fe 0.05-0.2 wt %, In 0.02-0.2
wt %,
Mg 0.05-0.2 wt %, Mn 0.05-0.2
wt %,
Ni 0.05-0.2 wt %, Si 0.05-0.2
wt %,
Sn 0.05-0.2 wt %, Te 0.05-0.2
wt %,
Ag 0.05-0.5 wt %, Cr 0.05-0.5
wt %,
Hf 0.05-0.5 wt %, Zn 0.1-0.8
wt % and
Zr 0.05-0.5 wt %
______________________________________ and the remainder cu with inevitable impurities, (b) laminating said rolled copper alloy foil onto a resin base film, and (c) etching said rolled copper alloy foil.
Claim 16
Independent Claim
163 words
A method for manufacturing a film carrier for mounting semi-conductor chips or other electronic components in place, said method comprising: (a) providing a rolled copper alloy foil, wherein said rolled copper alloy foil comprises a composition consisting essentially of a total of 0.005 to 1.5% by weight of one or more selected from the group consisting of ______________________________________
P 0.007-0.02
wt %, B 0.007-0.02
wt %,
Al 0.05-0.2 wt %, As 0.05-0.2
wt %,
Cd 0.05-0.2 wt %, Co 0.05-0.2
wt %,
Fe 0.05-0.2 wt %, In 0.02-0.2
wt %,
Mg 0.05-0.2 wt %, Mn 0.05-0.2
wt %,
Ni 0.05-0.2 wt %, Si 0.05-0.2
wt %,
Sn 0.05-0.2 wt %, Te 0.05-0.2
wt %,
Ag 0.05-0.5 wt %, Cr 0.05-0.5
wt %,
Hf 0.05-0.5 wt %, Zn 0.1-0.8
wt % and
Zr 0.05-0.5 wt %
______________________________________ and the remainder cu with inevitable impurities, (b) laminating said rolled copper alloy foil onto a resin base film, and (c) etching said rolled copper alloy foil.
Claim 17
Dependent Claim
41 words
The method according to claim 13 wherein said rolled copper alloy foil comprises a copper alloy composition consisting essentially of one or more elements selected from the group consisting of In, Sn and Ag and the remainder Cu with inevitable impurities.
Claim 18
Dependent Claim
22 words
The method according to claim 14 wherein said rolled copper alloy foil has an oxygen content of not more than 50 ppm.
Claim 19
Dependent Claim
22 words
The method according to claim 15 wherein the oxygen content of said rolled copper alloy foil is not more than 20 ppm.
Claim 20
Dependent Claim
22 words
The method according to claim 13 wherein said rolled copper alloy foil has an oxygen content of not more than 50 ppm.
Claim 21
Dependent Claim
22 words
The method according to claim 17 wherein the oxygen content of said rolled copper alloy foil is not more than 20 ppm.
Claim 22
Independent Claim
178 words
A method for manufacturing a film carrier for mounting semi-conductor chips or other electronic components in place, said method comprising: (a) providing a rolled copper alloy foil, wherein said rolled copper alloy foil comprises a composition consisting essentially of a total of 0.005 to 1.5% by weight of one or more selected from the group consisting of ______________________________________
P 0.007-0.02
wt %, B 0.007-0.02
wt %,
Al 0.05-0.2 wt %, As 0.05-0.2
wt %
Cd 0.05-0.2 wt %, Co 0.05-0.2
wt %,
Fe 0.05-0.2 wt %, In 0.02-0.2
wt %,
Mg 0.05-0.2 wt %, Mn 0.05-0.2
wt %,
Ni 0.05-0.2 wt %, Si 0.05-0.2
wt %,
Sn 0.05-0.2 wt %, Te 0.05-0.2
wt %,
Ag 0.05-0.5 wt %, Cr 0.05-0.5
wt %,
Hf 0.05-0.5 wt %, Zn 0.1-0.8
wt % and
Zr 0.05-0.5 wt %
______________________________________ and the remainder Cu with inevitable impurities, (b) strain relief annealing said rolled copper alloy foil after its final cold rolling, (c) laminating said annealed rolled copper alloy foil onto a resin base film, and (d) etching said rolled copper alloy foil.
Claim 23
Independent Claim
178 words
A method for manufacturing a film carrier for mounting semi-conductor chips or other electronic components in place, said method comprising: (a) providing a rolled copper alloy foil, wherein said rolled copper alloy foil comprises a composition consisting essentially of a total of 0.005 to 1.5% by weight of one or more selected from the group consisting of ______________________________________
P 0.007-0.02
wt %, B 0.007-0.02
wt %,
Al 0.05-0.2 wt %, As 0.05-0.2
wt %
Cd 0.05-0.2 wt %, Co 0.05-0.2
wt %,
Fe 0.05-0.2 wt %, In 0.02-0.2
wt %,
Mg 0.05-0.2 wt %, Mn 0.05-0.2
wt %,
Ni 0.05-0.2 wt %, Si 0.05-0.2
wt %,
Sn 0.05-0.2 wt %, Te 0.05-0.2
wt %,
Ag 0.05-0.5 wt %, Cr 0.05-0.5
wt %,
Hf 0.05-0.5 wt %, Zn 0.1-0.8
wt % and
Zr 0.05-0.5 wt %
______________________________________ and the remainder Cu with inevitable impurities, (b) strain relief annealing said rolled copper alloy foil after its final cold rolling, (c) laminating said annealed rolled copper alloy foil onto a resin base film, and (d) etching said rolled copper alloy foil.
Claim 24
Dependent Claim
41 words
The method according to claim 19 wherein said rolled copper alloy foil comprises a copper alloy composition consisting essentially of one or more elements selected from the group consisting of In, Sn and Ag and the remainder Cu with inevitable impurities.
Claim 25
Dependent Claim
22 words
The method according to claim 20 wherein said rolled copper alloy foil has an oxygen content of not more than 50 ppm.
Claim 26
Dependent Claim
22 words
The method according to claim 21 wherein the oxygen content of said rolled copper alloy foil is not more than 20 ppm.
Claim 27
Dependent Claim
22 words
The method according to claim 19 wherein said rolled copper alloy foil has an oxygen content of not more than 50 ppm.
Claim 28
Dependent Claim
22 words
The method according to claim 23 wherein the oxygen content of said rolled copper alloy foil is not more than 20 ppm.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-01 | 1994-10-01 | 1995-04-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-01 | 1998-10-01 | 1999-04-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-01 | 2002-10-01 | 2003-04-02 | $7700.00 | Window Closed / Lapsed |