Charge skimming solid-state image array circuit and method including individual photosensor compensation

Claim 2

A solid state imaging array for generating a plurality of electrical imaging signals comprising: a plurality of photoresponsive sensors for producing electrical charges in response to incident light; a signal processing circuit including a charge skimming electrode associated with each sensor for receiving and storing electrical charges from the associated sensor and for transferring to a respective charge coupled device a skimmed portion of the stored electrical charge, the skimmed portion being determined by the magnitude of a skimming voltage applied to the respective skimming electrode; a plurality of first charge coupled devices for receiving the skimmed portions of electrical charges from the signal processing circuits and for transferring the skimmed portions of electrical charges to external circuitry; and means for applying different magnitude skimming voltages to each of the skimming electrodes, thereby compensating for variations in the photosensitivities of the individual sensors.

Claim 3

The solid state imaging array of claim 1 wherein said means for applying the skimming voltages to respective skimming electrodes comprises: switching means associated with each of the signal processing circuits receiving skimming signals for converting the skimming signals into the skimming voltage magnitudes and for controlling the application of a skimming voltage magnitudes to the respective skimming electrodes; and a second charge coupled device for supplying the associated skimming signals to the respective switching means.

Claim 4

The solid state imaging array of claim 2 including means for supplying a gating signal for actuating the switching means and transferring the associated skimming voltage magnitudes to the respective skimming electrodes.

Claim 5

The solid state imaging array of claim 2 wherein said each switching means comprises a floating diffusion region amplifier receiving the respective skimming signal for the associated signal processing circuit from the second charge coupled device and a field effect transistor having a grounded source, a gate receiving the output signal from the floating diffusion region amplifier, and a drain supplying the skimming voltage magnitude to the respective skimming electrode.

Claim 6

The solid state imaging array of claim 1 wherein said sensors are responsive to infrared light.

Claim 7

The solid state imaging array of claim 5 wherein said sensors are Cd 0 .2 Hg 0 .8 Te.

Claim 8

A solid state imaging apparatus for generating a plurality of electrical imaging signals comprising: a plurality of photoresponsive sensors for producing electrical charges in response to incident light; a signal processing circuit including a charge skimming electrode associated with each sensor for receiving and storing electrical charges from the associated sensor and for transferring to a respective charge coupled device a skimmed portion of the stored electrical charge, the skimmed portion being determined by the magnitude of a skimming voltage applied to the respective skimming electrode; a plurality of first charge coupled devices for receiving the skimmed portions of electrical charges from the signal processing circuits and for transferring the skimmed portions of electrical charges to external circuitry; means for applying different magnitude skimming voltages to each of the skimming electrodes, thereby compensating for variations in the photosensitivities of the individual sensors; memory means for storing skimming levels corresponding to the magnitudes of the skimming voltages to be applied to the respective skimming electrodes; and means for converting the stored skimming levels into skimming voltage magnitudes and for applying the skimming voltage magnitudes to the respective skimming electrodes.

Claim 9

A solid state imaging apparatus for generating a plurality of electrical imaging signals comprising: a plurality of photoresponsive sensors for producing electrical charges in response to incident light; a signal processing circuit including a charge skimming electrode associated with each sensor for receiving and storing electrical charges from the associated sensor and for transferring to a respective charge coupled device a skimmed portion of the stored electrical charge, the skimmed portion being determined by the magnitude of a skimming voltage applied to the respective skimming electrode; a plurality of first charge coupled devices for receiving the skimmed portions of electrical charges from the signal processing circuits and for transferring the skimmed portions of electrical charges to external circuitry; means for applying different magnitude skimming voltages to each of the skimming electrodes, thereby compensating for variations in the photosensitivities of the individual sensors; memory means for storing skimming levels corresponding to the magnitudes of the skimming voltages to be applied to the respective skimming electrodes; and means for converting the stored skimming levels into skimming voltage magnitudes and for applying the skimming voltage magnitudes to the respective skimming electrodes.

Claim 10

The solid state imaging apparatus of claim 7 wherein said means for applying the skimming voltages to the respective skimming electrodes comprises: switching means associated with each of the signal processing circuits receiving the skimming signals for converting the skimming signals into the skimming voltage magnitudes and for controlling the application of a skimming voltage magnitudes to the respective skimming electrodes; and a second charge coupled device for supplying the associated skimming signals to the respective switching means.

Claim 11

The solid state imaging apparatus of claim 8 including means for supplying a gating signal for actuating the switching means and transferring the associated skimming voltage magnitudes to the respective skimming electrodes.

Claim 12

The solid state imaging apparatus of claim 9 wherein said means for converting comprises a digital-to-analog converter connected to the second charge coupled device for converting stored levels into the respective skimming signals; and clock means for producing a gating signal for actuating the switching means to apply the associated skimming voltage magnitudes to the respective skimming electrodes.

Claim 13

The solid state imaging apparatus of claim 7 including: means for producing skimming levels for storage in the memory means comprising an analog-to-digital converter for receiving electrical charges transferred from the first charge coupled device for each signal processing circuit with a uniform voltage applied to the skimming electrodes and a controlled quantity of light incident on each sensor and for converting the quantities of charge received into digital values, establishing the levels of the respective skimming signals and corresponding skimming voltages.

Claim 14

The solid state imaging apparatus of claim 7 wherein said sensors are responsive to infrared light.

Claim 15

The solid state imaging apparatus of claim 12 wherein said sensors are Cd 0 .2 Hg 0 .8 Te.

Claim 16

The solid state imaging apparatus of claim 7 wherein each switching means comprises a floating diffusion region amplifier receiving the respective skimming signal for the associated signal processing circuit from the second charge coupled device and a field effect transistor having a grounded source, a gate receiving the output signal from the floating diffusion region amplifier, and a drain supplying the skimming voltage magnitude to the respective skimming electrode.

Claim 19

The method of claim 15 wherein all of the sensors are illuminated with light of the same intensity.

Claim 20

The method of claim 15 wherein the sensors are illuminated with light having an intensity corresponding to the intensity of background light incident on the array when no light from an image source is present.

Claim 21

The method of claim 15 including at least one of applying zero voltage as the uniform magnitude skimming voltage to each of the skimming electrodes and keeping the switching means open during calibration of the apparatus.

Claim 24

The method of claim 19 including reconstructing the image by scanning the skimmed electrical charges in correspondence to the geometrical arrangement of the sensors in the array.

Claim 25

The method of claim 19 including forming an image of a source radiating infrared light.