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US4801991A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor light receiving device

Assignee: Mitsubishi Electric Corp
•
Filing: 1987-10-14
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Granted: 1989-01-31
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Expires: 2007-10-14
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Abstract

Abstract A semiconductor light receiving device comprising: a light receiving section obtained by arranging a plurality of light receiving elements having pn junctions in an array on a semiconductor substrate; a signal taking out section for taking out an electric signal obtained at the light receiving section; and a member for applying a magnetic field having a component in a direction vertical with the surface of the semiconductor substrate to the light receiving section.

Inventors

  • 👤 Yoshihiro Hisa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 16:35
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/157; H10F39/1575

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 118 words
A semiconductor light receiving device comprising: a light receiving section obtained by arranging a plurality of light receiving elements having pn junctions in an array on a surface of a semiconductor substrate; a signal taking out section for taking out an electric signal obtained at said light receiving section; and a means for applying a magnetic field to said light receiving section, the magnetic field having a direction providing a component perpendicular to the surface of said semiconductor substrate and having an intensity to restrict movement of current carriers in the semiconductor substrate to orbits in planes normal to the direction of the magnetic field and substantially prevent generation of cross-talk between the plurality of light receiving elements.
Claim 2
Dependent Claim 118 words
A semiconductor light receiving device comprising: a light receiving section obtained by arranging a plurality of light receiving elements having pn junctions in an array on a surface of a semiconductor substrate; a signal taking out section for taking out an electric signal obtained at said light receiving section; and a means for applying a magnetic field to said light receiving section, the magnetic field having a direction providing a component perpendicular to the surface of said semiconductor substrate and having an intensity to restrict movement of current carriers in the semiconductor substrate to orbits in planes normal to the direction of the magnetic field and substantially prevent generation of cross-talk between the plurality of light receiving elements.
Claim 3
Dependent Claim 29 words
A semiconductor light receiving device as defined in claim 1 wherein said magnetic field applying means comprises an electromagnet, and the intensity of the magnetic field thereof is adjustable.
Claim 4
Dependent Claim 34 words
A semiconductor light receiving device as defined in claim 1 wherein said magnetic field applying means applies a magnetic field in a direction at an acute angle with the surface of said semiconductor substrate.
Claim 5
Dependent Claim 31 words
A semiconductor light receiving device as defined in claim 2, wherein said magnetic field applying means applies a magnetic field in a direction diagonal with the surface of said semiconductor substrate.
Claim 6
Dependent Claim 31 words
A semiconductor light receiving device as defined in claim 1 wherein said light receiving section and signal taking out section are produced on different semiconductor substrates, respectively, which comprise different materials.
Claim 7
Dependent Claim 44 words
A semiconductor light receiving device as defined in claim 5 wherein said semiconductor light receiving device is an infrared rays detector, and the semiconductor substrate of said light receiving section comprises HgCdTe, and the semiconductor substrate of said signal taking out section comprises silicon.
Claim 8
Dependent Claim 36 words
A semiconductor light receiving device as defined in claim 6 wherein said magnetic field applying means comprises an electromagnet, and a cooler for cooling said light receiving section is provided inside a coil of said electromagnet.
Claim 9
Dependent Claim 25 words
A semiconductor light receiving device as defined in claim 6 wherein said signal taking out section is of MOS switch type including only transfer gates.
Claim 10
Dependent Claim 25 words
A semiconductor light receiving device as defined in claim 6 wherein said signal taking out section is of CCD type including transfer gates and CCDs.
Claim 11
Dependent Claim 115 words
A semiconductor light receiving device comprising: a light receiving section obtained by arranging a plurality of light receiving elements having pn junctions in an array on a surface of a semiconductor substrate; a signal taking out section for taking out an electric signal obtained at said light receiving section; and a member applying a magnetic field to said light receiving section, the magnetic field having a direction providing a component perpendicular to the surface of said semiconductor substrate and having an intensity restricting movement of current carriers in the semiconductor substrate to orbits in planes normal to the direction of the magnetic field and which substantially prevent generation of cross-talk between the light receiving elements.
Claim 12
Dependent Claim 115 words
A semiconductor light receiving device comprising: a light receiving section obtained by arranging a plurality of light receiving elements having pn junctions in an array on a surface of a semiconductor substrate; a signal taking out section for taking out an electric signal obtained at said light receiving section; and a member applying a magnetic field to said light receiving section, the magnetic field having a direction providing a component perpendicular to the surface of said semiconductor substrate and having an intensity restricting movement of current carriers in the semiconductor substrate to orbits in planes normal to the direction of the magnetic field and which substantially prevent generation of cross-talk between the light receiving elements.

References Cited (Backward Citations)

US3863070A Cited
US3906359A Cited
US4039833A Cited
US4115692A Cited
US4369458A Cited
JPS58131765A Cited
JPS6042878A Cited
JPS61141175A Cited
JPS6236858A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-01-31 1992-08-01 1993-01-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-01-31 1996-08-01 1997-01-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-01-31 2000-08-01 2001-01-31 $7700.00 Window Closed / Lapsed

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