Photo detector

Abstract

Abstract PURPOSE:To enable to obtain photo detecting power effectively higher than by a P-N photo detector by a method wherein the title detector is so construted as to current-amplify a hole current induced by light by means of a transistor formed on a semiconductor substrate. CONSTITUTION:A P type impurity region 2 is formed on an N type Si substrate 1. N type impurity regions 3-5 are formed in this region 2. Further, the gate electrode 6 of an MOS transistor TR is formed above the region 2. The region of this photo detector is set at a plus voltage, and a plus voltage pulse is impressed on the electrode 6. The substrate 1 is grounded, and a +potential or at a floating potential. Light is incident from above to the region 2. The hole current induced by the light is multiplied by the current amplification factor of an N-P-N TR formed of the regions 4, 2, and 1. The amount of discharged charges proportional to the amount of irradiation with this light is released out of an electrode 8 by impressing pulses on the electrode 6.

Inventors

• 👤 Natsuo Tsubouchi
• 👤 坪内　夏朗
• 👤 Sotohisa Asai
• 👤 浅井　外壽

Bibliographic Details