Infrared Schottky junction charge coupled device

Claim 2

A Schottky junction charge coupled device infrared imaging array having substantially contiguous infrared sensitive elements with a full factor substantially greater than fifty percent, said imaging array comprising: a plurality of substantially contiguous conductive transfer electrodes disposed along a semiconductor substrate above a buried implant channel and providing means for serially shifting charge packets within the buried channel of said substrate when a sequence of control voltages is applied thereto, each of said substantially contiguous transfer electrodes forming a rectifying metal to semiconductor contact known as a Schottky contact and having a barrier height sufficiently low to cause the Schottky contact to respond to infrared radiation of wavelength substantially greater than the band to band absorption cutoff wavelength of the semiconductor, an anti-reflective coating disposed on a side of the semiconductor substrate opposite said transfer electrodes, said Schottky contact acting in a first mode as an infrared detector element by photoemission of charge carriers from the metallic region of said Schottky contact to said buried channel of said semiconductor substrate and, in a second mode, to control movement of charge packets within said buried channel, operating in said first or second mode being determined by voltage sequences applied to said transfer electrodes.

Claim 3

The Schottky junction array as in claim 1 wherein tho array is a one dimensional array.

Claim 4

The Schottky junction array as claim in claim 1 wherein a plurality of one dimensional arrays are formed side by side to produce a two dimensional array.

Claim 5

The Schottky junction array of claim 3 wherein a one dimensional output array is provided, each element of the output array being connected to an output of a respective one dimensional array of the Schottky array such that the Schottky array can be read serially.

Claim 6

The Schottky junction array as in claim 3 wherein a further charge coupled device array is provided, having the same dimensions as the Schottky junction array, and into which the respective charges of the elements of the Schottky array can be rapidly read, the further array being connected to the Schottky array in a manner which allows simultaneous reading of each of the one dimensional arrays of the Schottky array into the respective row of the further array.

Claim 7

The Schottky junction array of claim 1 wherein the Schottky junction gates are formed as metal silicide Schottky barrier gates comprising a metal silicide layer formed on the surface of a doped substrate having an oppositely doped implanted channel with an inbuilt non-uniform profile.

Claim 8

The Schottky junction array as in claim 6 wherein the doped channel has two distinct regions within each gate structure, a first region being a heavily doped well region and a second region being a lightly doped barrier region.

Claim 9

The Schottky junction array as in claim 6 wherein the metal of the metal silicide layer is selected from Palladium, Iridium or Platinum.

Claim 10

The Schottky junction array as in claim 1 wherein the substrate is N-type silicon and the implanted channel has a P-type implant.

Claim 11

The Schottky junction array as in claim 1 wherein the substrate is P-type silicon and the implanted channel has an N-type implant.

Claim 12

A Schottky junction charge coupled device infrared imaging array having substantially contiguous infrared sensitive elements with a fill factor substantially greater than fifty percent, said imaging array comprising: a plurality of substantially contiguous conductive transfer electrodes disposed along a semiconductor substrate above a buried implant channel and providing means for serially shifting charge packets within the buried channel of said substrate when a sequence of control voltages is applied thereto, each of said substantially contiguous transfer electrodes forming a rectifying metal to semiconductor contact known as a Schottky contact and having a barrier height sufficiently low to cause the Schottky contact to respond to infrared radiation of wavelength substantially greater than the band to band absorption cutoff wavelength of the semiconductor, said Schottky contact acting in a first mode as an infrared detector element by photoemission of charge carriers from the metallic region of said Schottky contact to said buried channel of said semiconductor substrate and, in a second mode, to control movement of charge packets within said buried channel, operating in said first or second mode being determined by voltage sequences applied to said transfer electrodes, a plurality of one dimensional arrays being formed side by side to produce a two dimensional array, a further charge coupled device array being provided, having the same dimensions as the Schottky junction array, and into which the respective charges of the elements of the Schottky array can be rapidly read, the further array being connected to the Schottky array in a manner which allows simultaneous reading of each of the one dimensional arrays of the Schottky array into the respective row of the further array, wherein the further array is a Schottky junction charge coupled device array which is shielded from radiation.

Claim 13

A Schottky junction charge coupled device infrared imaging array having substantially contiguous infrared sensitive elements with a fill factor substantially greater than fifty percent, said imaging array comprising: a plurality of substantially contiguous conductive transfer electrodes disposed along a semiconductor substrate above a buried implant channel and providing means for serially shifting charge packets within the buried channel of said substrate when a sequence of control voltages is applied thereto, each of said substantially contiguous transfer electrodes forming a rectifying metal to semiconductor contact known as a Schottky contact and having a barrier height sufficiently low to cause the Schottky contact to respond to infrared radiation of wavelength substantially greater than the band to band absorption cutoff wavelength of the semiconductor, said Schottky contact acting in a first mode as an infrared detector element by photoemission of charge carriers from the metallic region of said Schottky contact to said buried channel of said semiconductor substrate and, in a second mode, to control movement of charge packets within said buried channel, operating in said first or second mode being determined by voltage sequences applied to said transfer electrodes, a plurality of one dimensional arrays being formed side by side to produce a two dimensional array, a further charge coupled device array being provided, having the same dimensions as the Schottky junction array, and into which the respective charges of the elements of the Schottky array can be rapidly read, the further array being connected to the Schottky array in a manner which allows simultaneous reading of each of the one dimensional arrays of the Schottky array into the respective row of the further array, wherein the further array is a Schottky junction charge coupled device array which is shielded from radiation.

Claim 14

A Schottky junction charge coupled device infrared imaging array having substantially contiguous infrared sensitive elements with a fill factor substantially greater than fifty percent, said imaging array comprising: a plurality of substantially contiguous conductive transfer electrodes disposed along a semiconductor substrate above a buried implant channel and providing means for serially shifting charge packets within the buried channel of said substrate when a sequence of control voltages is applied thereto, each of said substantially contiguous transfer electrodes forming a rectifying metal to semiconductor contact known as a Schottky contact and having a barrier height sufficiently low to cause the Schottky contact to respond to infrared radiation of wavelength substantially greater than the band to band absorption cutoff wavelength of the semiconductor, said Schottky contact acting in a first mode as an infrared detector element by photoemission of charge carriers from the metallic region of said Schottky contact to said buried channel of said semiconductor substrate and, in a second mode, to control movement of charge packets within said buried channel, operating in said first or second mode being determined by voltage sequences applied to said transfer electrodes, a plurality of one dimensional arrays being formed side by side to produce a two dimensional array, a one dimensional output charge coupled device array being provided, each element of the output array being connected to an output of a respective one dimensional array of the Schottky array such that the Schottky array can be read serially, a further charge coupled device array being provided, having the same dimensions as the Schottky junction array, and into which the respective charges of the elements of the Schottky array can be rapidly read, the further array being connected to the Schottky array in a manner which allows simultaneous reading of each of the one dimensional arrays of the Schottky array into the respective row of the further array, wherein the further array is a Schottky junction charge coupled device array which is shielded from radiation.

Claim 15

A Schottky junction charge coupled device infrared imaging array having substantially contiguous infrared sensitive elements with a fill factor substantially greater than fifty percent, said imaging array comprising: a plurality of substantially contiguous conductive transfer electrodes disposed along a semiconductor substrate above a buried implant channel and providing means for serially shifting charge packets within the buried channel of said substrate when a sequence of control voltages is applied thereto, each of said substantially contiguous transfer electrodes forming a rectifying metal to semiconductor contact known as a Schottky contact and having a barrier height sufficiently low to cause the Schottky contact to respond to infrared radiation of wavelength substantially greater than the band to band absorption cutoff wavelength of the semiconductor, said Schottky contact acting in a first mode as an infrared detector element by photoemission of charge carriers from the metallic region of said Schottky contact to said buried channel of said semiconductor substrate and, in a second mode, to control movement of charge packets within said buried channel, operating in said first or second mode being determined by voltage sequences applied to said transfer electrodes, a plurality of one dimensional arrays being formed side by side to produce a two dimensional array, a one dimensional output charge coupled device array being provided, each element of the output array being connected to an output of a respective one dimensional array of the Schottky array such that the Schottky array can be read serially, a further charge coupled device array being provided, having the same dimensions as the Schottky junction array, and into which the respective charges of the elements of the Schottky array can be rapidly read, the further array being connected to the Schottky array in a manner which allows simultaneous reading of each of the one dimensional arrays of the Schottky array into the respective row of the further array, wherein the further array is a Schottky junction charge coupled device array which is shielded from radiation.

Claim 16

A Schottky junction charge coupled device infrared imaging array having a fill factor of infrared sensitive area substantially greater than fifty percent, said array comprising: a plurality of substantially contiguous voltage-controlled gates having infrared sensitive Schottky barrier electrodes disposed along the surface of a semiconductor substrate wherein voltages applied to said gates produce potential variations within said semiconductor substrate which lead to the controlled movement of charge within said semiconductor, and means for projecting an infrared image onto said semiconductor substrate having a wavelength longer than the absorption cutoff wavelength of the semiconductor but shorter than the wavelength corresponding to the barrier height of the infrared sensitive Schottky barrier electrodes, wherein all of said gates each include a Schottky junction with said semiconductor with barrier height being sufficiently low that the junction is infrared sensitive at wavelengths longer than the absorption cutoff wavelength of the semiconductor but shorter than the wavelength corresponding to the barrier height of the infrared sensitive Schottky barrier electrodes, said Schottky junction gates thereby operating in a first mode as infrared detection elements and in a second mode to control the movement of charge within said semiconductor in response to a succession of different control voltages applied to the gates.

Claim 17

A Schottky junction charge coupled device infrared imaging array having a fill factor of infrared sensitive area substantially greater than fifty percent, said array comprising: a plurality of substantially contiguous voltage-controlled gates having infrared sensitive Schottky barrier electrodes disposed along the surface of a semiconductor substrate wherein voltages applied to said gates produce potential variations within said semiconductor substrate which lead to the controlled movement of charge within said semiconductor, and means for projecting an infrared image onto said semiconductor substrate having a wavelength longer than the absorption cutoff wavelength of the semiconductor but shorter than the wavelength corresponding to the barrier height of the infrared sensitive Schottky barrier electrodes, wherein all of said gates each include a Schottky junction with said semiconductor with barrier height being sufficiently low that the junction is infrared sensitive at wavelengths longer than the absorption cutoff wavelength of the semiconductor but shorter than the wavelength corresponding to the barrier height of the infrared sensitive Schottky barrier electrodes, said Schottky junction gates thereby operating in a first mode as infrared detection elements and in a second mode to control the movement of charge within said semiconductor in response to a succession of different control voltages applied to the gates.

Claim 18

An array of substantially contiguous silicon-based Schottky junction gates, each gate being capable (a) of accumulating a packet electrical charge corresponding to the quantity of incident infrared photons during an imaging time and (b) of subsequently serially shifting such accumulated charge packets along said array to an output port, said array having an active infrared sensitive fill factor substantially greater than fifty percent and comprising: a silicon-based semiconducting substrate having at least one channel therein along which impurities are doped at alternating first and second densities to define respectively corresponding alternating barrier and well regions along said channel; a Schottky gate-defining semiconductor structure disposed above and across each successive pair of said barrier and well regions; means for projecting an infrared image onto said semiconductor substrate having a wavelength longer than the absorption cutoff wavelength of the semiconductor but shorter than the wavelength corresponding to the barrier height of the infrared sensitive Schottky barrier region, and each nth one of said gate-defining structures being connected in parallel to respective n gate control ports whereby reverse-biased junctions may be maintained between each of said gate defining structures and its respectively associated barrier and well regions with infrared photon-inducted charges being accumulated in each said well when constant control voltages are applied to said gate control ports and where such accumulated charges are serially transferred along said channel from one gate to the next in a predetermined direction when suitably phased changing control voltages are applied to said gate control ports.

Claim 19

An array of substantially contiguous silicon-based Schottky junction gates, each gate being capable (a) of accumulating a packet electrical charge corresponding to the quantity of incident infrared photons during an imaging time and (b) of subsequently serially shifting such accumulated charge packets along said array to an output port, said array having an active infrared sensitive fill factor substantially greater than fifty percent and comprising: a silicon-based semiconducting substrate having at least one channel therein along which impurities are doped at alternating first and second densities to define respectively corresponding alternating barrier and well regions along said channel; a Schottky gate-defining semiconductor structure disposed above and across each successive pair of said barrier and well regions; means for projecting an infrared image onto said semiconductor substrate having a wavelength longer than the absorption cutoff wavelength of the semiconductor but shorter than the wavelength corresponding to the barrier height of the infrared sensitive Schottky barrier region, and each nth one of said gate-defining structures being connected in parallel to respective n gate control ports whereby reverse-biased junctions may be maintained between each of said gate defining structures and its respectively associated barrier and well regions with infrared photon-inducted charges being accumulated in each said well when constant control voltages are applied to said gate control ports and where such accumulated charges are serially transferred along said channel from one gate to the next in a predetermined direction when suitably phased changing control voltages are applied to said gate control ports.

Claim 20

A Schottky junction charge coupled device as in claim 13 or 14 wherein the transfer electrodes are metal or metallic silicide layers.

Claim 21

A Schottky junction charge coupled device as in claim 15 wherein a dielectric passivating layer is located over the transfer electrodes.

Claim 22

A Schottky junction charge coupled device as in claim 16 wherein a mirror is located above the dielectric layer and the transfer electrodes are sufficiently thin to enable transmission of infrared light and the dielectric layer forms an optical cavity on top of the transfer electrode.

Claim 23

A Schottky junction charge coupled device as in claim 17 wherein the channel region is a p-type region.

Claim 24

A Schottky junction charge coupled device as in claim 18 wherein the transfer electrodes are composed of a metal selected from iridium, platinum and palladium or a silicide of one of these metals.

Claim 25

A Schottky junction charge coupled device infrared imaging array having substantially contiguous infrared sensitive elements with a fill factor substantially greater than fifty percent, said imaging array comprising: a plurality of substantially contiguous conductive transfer electrodes disposed along a semiconductor substrate above a buried implant channel and providing means for serially shifting charge packets within the buried channel of said substrate when a sequence of control voltages is applied thereto, each of said substantially contiguous transfer electrodes forming a rectifying metal to semiconductor contact known as a Schottky contact and having a barrier height sufficiently low to cause the Schottky contact to respond to infrared radiation of wavelength substantially greater than the band to band absorption cutoff wavelength of the semiconductor, said Schottky contact acting in a first mode as an infrared detector element by photoemission of charge carriers from the metallic region of said Schottky contact to said buried channel of said semiconductor substrate and, in a second mode, to control movement of charge packets within said buried channel, operating in said first or second mode being determined by voltage sequences applied to said transfer electrodes, a dielectric passivating layer located over the transfer electrodes, and a mirror located above the dielectric layer, the transfer electrodes being sufficiently thin to enable transmission of infrared light and the dielectric layer forming an optical cavity on top of the transfer electrode.

Claim 26

A Schottky junction charge coupled device infrared imaging array having substantially contiguous infrared sensitive elements with a fill factor substantially greater than fifty percent, said imaging array comprising: a plurality of substantially contiguous conductive transfer electrodes disposed along a semiconductor substrate above a buried implant channel and providing means for serially shifting charge packets within the buried channel of said substrate when a sequence of control voltages is applied thereto, each of said substantially contiguous transfer electrodes forming a rectifying metal to semiconductor contact known as a Schottky contact and having a barrier height sufficiently low to cause the Schottky contact to respond to infrared radiation of wavelength substantially greater than the band to band absorption cutoff wavelength of the semiconductor, said Schottky contact acting in a first mode as an infrared detector element by photoemission of charge carriers from the metallic region of said Schottky contact to said buried channel of said semiconductor substrate and, in a second mode, to control movement of charge packets within said buried channel, operating in said first or second mode being determined by voltage sequences applied to said transfer electrodes, a dielectric passivating layer located over the transfer electrodes, and a mirror located above the dielectric layer, the transfer electrodes being sufficiently thin to enable transmission of infrared light and the dielectric layer forming an optical cavity on top of the transfer electrode.

Claim 27

A Schottky junction charge coupled device as in claim 20 wherein the channel region is a p-type region.

Claim 28

A Schottky junction charge coupled device as in claim 21 wherein the transfer electrodes are composed of a metal selected from iridium, platinum and palladium or a silicide of one of these metals.