Patent EP0280171A2 successfully refreshed from Google Patents.
Patent US4997779A successfully refreshed from Google Patents.
US4997779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making asymmetrical gate field effect transistor
Assignee: Mitsubishi Electric Corp
•
Filing: 1989-05-26
•
Granted: 1991-03-05
•
Expires: 2009-05-26
Abstract
Abstract A field effect transistor includes a high concentration doping layer self-alignedly produced using a refractory metal silicide gate as a mask for ion implantation in a semi-insulating substrate. The distance between the refractory metal gate and the high concentration doping layer which becomes a source region is shorter than the distance between the refractory metal gate and a high concentration doping layer which becomes a drain region. A method of producing a field effect transistor having an offset refractory metal silicide gate includes depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film successively on an active layer which is produced on a semi-insulating substate. The deposited layers are patterned with a resist film for producing a gate pattern mask for etching the respective layers all at once or one-by-one. High dopant concentration source and drain regions are formed by ion implantation and annealing. A second insulator film is deposited on the entire surface of the substrate. The structure is etched to leave the second insulator film only at one side of the gate using reactive ion etching oblique to the substrate. Alternatively, the second insulator film is deposited to cover only one of the sides of the gate on the substrate. Etching is carried out at only one side of the refractory metal silicide film using the first and second insulator films as masks. Source and drain electrodes are formed after removing the first and second insulator films.
Inventors
- 👤 Yasutaka Kohno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:09
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0614; H10D30/0616; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/161; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/60; H10D64/64
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
169 words
A method of producing a field effect transistor having an offset refractory metal silicide gate comprising: forming an active layer in a semi-insulating substrate; depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film successively on the active layer; forming a pattern on the deposited layers with a resist film for etching at least one of the layers; forming a refractory metal silicide gate by removing part of the layers; ion implanting impurities into the substrate to produce a source and a drain using the layers as a mask and annealing the substrate; depositing a second insulator film on the entire surface of the substrate and etching to leave the second insulator film in place only at one side of the gate by reactive ion etching obliquely to the substrate; etching only at one side of said refractory metal silicide film using said first and second insulator films as masks; and depositing source and drain electrodes after removing said first and second insulator films.
Claim 2
Independent Claim
169 words
A method of producing a field effect transistor having an offset refractory metal silicide gate comprising: forming an active layer in a semi-insulating substrate; depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film successively on the active layer; forming a pattern on the deposited layers with a resist film for etching at least one of the layers; forming a refractory metal silicide gate by removing part of the layers; ion implanting impurities into the substrate to produce a source and a drain using the layers as a mask and annealing the substrate; depositing a second insulator film on the entire surface of the substrate and etching to leave the second insulator film in place only at one side of the gate by reactive ion etching obliquely to the substrate; etching only at one side of said refractory metal silicide film using said first and second insulator films as masks; and depositing source and drain electrodes after removing said first and second insulator films.
Claim 3
Independent Claim
228 words
A method of producing a field effect transistor having an offset refractory metal silicide gate covered with a low resistance metal layer comprising: forming an active layer in a semi-insulating substrate; depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film on the active layer; forming a pattern on the deposited layers with a first photoresist film for etching at least one of the layers; forming a refractory metal silicide gate by removing part of the layers; ion implanting impurities into the substrate to produce a source and a drain using the layers as a mask and annealing the substrate; depositing a second insulator film on the entire surface of the substrate and etching to leave the second insulator film in place only at one side of the gate by reactive ion etching having a directionality diagonal to the substrate; etching only at one side of said refractory metal silicide film using said first and second insulator films as masks; removing said second insulator film, depositing a second photoresist film on the entire surface of the substrate, and etching the second photoresist film until the first insulator film is exposed; removing the first insulator film and depositing a low resistance metal layer on the refractory metal silicide layer; and removing the second photoresist film and depositing a source electrode and a drain electrode.
Claim 4
Independent Claim
228 words
A method of producing a field effect transistor having an offset refractory metal silicide gate covered with a low resistance metal layer comprising: forming an active layer in a semi-insulating substrate; depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film on the active layer; forming a pattern on the deposited layers with a first photoresist film for etching at least one of the layers; forming a refractory metal silicide gate by removing part of the layers; ion implanting impurities into the substrate to produce a source and a drain using the layers as a mask and annealing the substrate; depositing a second insulator film on the entire surface of the substrate and etching to leave the second insulator film in place only at one side of the gate by reactive ion etching having a directionality diagonal to the substrate; etching only at one side of said refractory metal silicide film using said first and second insulator films as masks; removing said second insulator film, depositing a second photoresist film on the entire surface of the substrate, and etching the second photoresist film until the first insulator film is exposed; removing the first insulator film and depositing a low resistance metal layer on the refractory metal silicide layer; and removing the second photoresist film and depositing a source electrode and a drain electrode.
Claim 5
Independent Claim
146 words
A method of producing a field effect transistor having an offset refractory metal silicide gate comprising: forming an active layer in a semi-insulating substrate; depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film successively on the active layer; forming a pattern on the deposited layers with a resist film for etching at least one of the layers; forming a refractory metal silicide gate by removing part of the layers; ion implanting impurities into the substrate to produce a source and a drain using the layers as a mask and annealing the substrate; depositing a second insulator film covering only one of the sides of the gate; etching only at one side of said refractory metal silicide film using said first and second insulator films as masks; and depositing source and drain electrodes after removing said first and second insulator films.
Claim 6
Independent Claim
146 words
A method of producing a field effect transistor having an offset refractory metal silicide gate comprising: forming an active layer in a semi-insulating substrate; depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film successively on the active layer; forming a pattern on the deposited layers with a resist film for etching at least one of the layers; forming a refractory metal silicide gate by removing part of the layers; ion implanting impurities into the substrate to produce a source and a drain using the layers as a mask and annealing the substrate; depositing a second insulator film covering only one of the sides of the gate; etching only at one side of said refractory metal silicide film using said first and second insulator films as masks; and depositing source and drain electrodes after removing said first and second insulator films.
Claim 7
Independent Claim
197 words
A method of producing a field effect transistor having an offset refractory metal silicide gate covered with a low resistance metal layer comprising: forming an active layer in a semi-insulating substrate; depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film on the active layer; forming a pattern on the deposited layers with a first photoresist film for etching at least one of the layers; forming a refractory metal silicide gate by removing part of the layers; ion implanting impurities into the substrate to produce a source and a drain using the layers as a mask and annealing the substrate; depositing a second insulator film covering only one of the sides of the gate; etching only at one side of said refractory metal silicide film using said first and second insulator films as masks; depositing a second photoresist film on the entire surface of the substrate, and etching the second photoresist film until the first insulator film is exposed; removing the first insulator film and depositing a low resistance metal layer on the refractory metal silicide layer; and removing the second photoresist film and depositing a source electrode and a drain electrode.
Claim 8
Independent Claim
197 words
A method of producing a field effect transistor having an offset refractory metal silicide gate covered with a low resistance metal layer comprising: forming an active layer in a semi-insulating substrate; depositing a refractory metal silicide layer, a refractory metal film, and a first insulator film on the active layer; forming a pattern on the deposited layers with a first photoresist film for etching at least one of the layers; forming a refractory metal silicide gate by removing part of the layers; ion implanting impurities into the substrate to produce a source and a drain using the layers as a mask and annealing the substrate; depositing a second insulator film covering only one of the sides of the gate; etching only at one side of said refractory metal silicide film using said first and second insulator films as masks; depositing a second photoresist film on the entire surface of the substrate, and etching the second photoresist film until the first insulator film is exposed; removing the first insulator film and depositing a low resistance metal layer on the refractory metal silicide layer; and removing the second photoresist film and depositing a source electrode and a drain electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-04 | 1994-09-03 | 1995-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-04 | 1998-09-03 | 1999-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-04 | 2002-09-03 | 2003-03-05 | $7700.00 | Window Closed / Lapsed |