US4997673A
Expired / Lapsed
US
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Method of forming aluminum nitride films by ion-assisted evaporation
Assignee: Nissin Electric Co Ltd
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Filing: 1990-01-18
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Granted: 1991-03-05
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Expires: 2010-01-18
Abstract
Abstract Method of forming aluminum nitride film on a substrate by subjecting the substrate to aluminum evaporation and nitrogen ion irradiation in a vacuum. Defects in the aluminum nitride film due to ion irradiation is minimized by irradiating the substrate with low energy nitrogen ions, i.e., nitrogen ions having an energy level no higher than 1 KeV. The particle ratio (composition ratio of Al/N) used in forming the aluminum nitride film is between 0.5 to 2.0.
Inventors
- 👤 Kiyoshi Ogata
- 👤 Yasunori Andoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:22
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0617; C23C14/22
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
63 words
A method of forming an aluminum nitride film on a substrate without heating comprising: placing the substrate at room temperature in a vacuum; subjecting the substrate at said room temperature to aluminum evaporation; and subjecting the substrate at said room temperature to nitrogen ion irradiation, wherein the energy of the nitrogen ion irradiation is higher than zero but not higher than 1 KeV.
Claim 2
Independent Claim
63 words
A method of forming an aluminum nitride film on a substrate without heating comprising: placing the substrate at room temperature in a vacuum; subjecting the substrate at said room temperature to aluminum evaporation; and subjecting the substrate at said room temperature to nitrogen ion irradiation, wherein the energy of the nitrogen ion irradiation is higher than zero but not higher than 1 KeV.
Claim 3
Dependent Claim
21 words
The method according to claim 1, wherein the nitrogen ion irradiation of the substrate is conducted simultaneously with the aluminum evaporation.
Claim 4
Dependent Claim
23 words
The method according to claim 1, wherein the nitrogen ion irradiation of the substrate is conducted in alternating manner with the aluminum evaporation.
Claim 5
Dependent Claim
34 words
The method according to claim 1, wherein the ratio of aluminum evaporated on the substrate to the nitrogen ions irradiated on the substrate is a value selected from a range of 0.5 to 2.0.
Claim 6
Dependent Claim
20 words
The method according to claim 4, wherein the ratio is a value selected from a range of 1.0 to 1.5.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-04 | 1994-09-03 | 1995-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-04 | 1998-09-03 | 1999-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-04 | 2002-09-03 | 2003-03-05 | $7700.00 | Window Closed / Lapsed |