Monolithically integratable microwave attenuation element

Claim 2

A monolithically integratable microwave attenuation element that has at least three field effect transistors (Q1, Q2, Q3) arranged in a PI structure, the PI structure having at least two terminal ports for a signal path and having control terminals, comprising drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in a PI configuration; a respective resistor (R11, R22, R33) connected parallel to each of the drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in the PI configuration; and a capacitor (CP1, CP2) connected in parallel with each of the terminal ports, the respective capacitor forming a line simulation of concentrated elements together with inductances (LB1, LB2) of leads connected to the terminal ports and together with external capacitors (CE1, CE2) connected to the terminal ports.

Claim 3

The microwave attenuation element according to claim 1, wherein one of the transistors is a series field effect transistor (Q3) in the PI configuration and wherein the resistor (R33) connected parallel to the drain-source path of the series field effect transistor (Q3) is fashioned as a thin-film resistor.

Claim 4

The microwave attenuation element according to claim 1, wherein two of the transistors are parallel field effect transistors (Q1, Q2) in the PI configuration and wherein the respective resistors (R11, R22) connected parallel to the drain-source paths of the parallel field effect transistors (Q1 Q2) are fashioned as implantation resistors.

Claim 5

The microwave attenuation element according to claim 1, wherein one of the transistors in the PI configuration is a series field effect transistor (Q3) and wherein the series field effect transistor (Q3) can be completely inhibited with a suitable control voltage.

Claim 6

The microwave attenuation element according to claim 1, wherein two of the transistors in the PI configuration are parallel field effect transistors (Q1, Q2) and wherein the parallel field effect transistors (Q1, Q2) can be completely inhibited with a suitable control voltage.

Claim 7

The microwave attenuation element according to claim 1, wherein the capacitances of the capacitors of the line simulation are of such size that the influence of the capacitances of the field effect transistors (Q1, Q2, Q3) and of other parasitic capacitors of the attenuation element is slight in comparison thereto.

Claim 8

The microwave attenuation element according to claim 1, wherein control voltages of the field effect transistors (Q1, Q2, Q3) have more than two values and are applied to the control terminals.

Claim 9

A monolithically integratable microwave attenuation element that has at least three field effect transistors (Q1, Q2, Q3) arranged in a PI structure, the PI structure having at least two terminal ports for a signal path and having control terminals, comprising: drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in a PI configuration; a respective resistor (R11, R22, R33) connected parallel to each of the drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in the PI configuration; one of the transistors in the PI configuration being a series field effect transistor (Q3), wherein the series field effect transistor (Q3) in the PI configuration can be completely inhibited with a suitable control voltage; two of the transistors in the PI configuration being parallel field effect transistors (Q1, Q2), wherein the parallel field effect transistors (Q1, Q2) in the PI configuration can be completely inhibited with a suitable control voltage; the control voltages of the field effect transistors (Q1, Q2, Q3) having more than two values and applied to the control terminals; and a capacitor (CP1, CP2) connected in parallel with each of the terminal ports, the respective capacitor forming a line simulation of concentrated elements together with inductances (LB1, LB2) of leads connected to the terminal ports and together with external capacitors (CE1, CE2) connected to the terminal ports.

Claim 10

A monolithically integratable microwave attenuation element that has at least three field effect transistors (Q1, Q2, Q3) arranged in a PI structure, the PI structure having at least two terminal ports for a signal path and having control terminals, comprising: drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in a PI configuration; a respective resistor (R11, R22, R33) connected parallel to each of the drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in the PI configuration; one of the transistors in the PI configuration being a series field effect transistor (Q3), wherein the series field effect transistor (Q3) in the PI configuration can be completely inhibited with a suitable control voltage; two of the transistors in the PI configuration being parallel field effect transistors (Q1, Q2), wherein the parallel field effect transistors (Q1, Q2) in the PI configuration can be completely inhibited with a suitable control voltage; the control voltages of the field effect transistors (Q1, Q2, Q3) having more than two values and applied to the control terminals; and a capacitor (CP1, CP2) connected in parallel with each of the terminal ports, the respective capacitor forming a line simulation of concentrated elements together with inductances (LB1, LB2) of leads connected to the terminal ports and together with external capacitors (CE1, CE2) connected to the terminal ports.

Claim 11

The microwave attenuation element according to claim 8, wherein the resistor (R33) connected parallel to the drain-source path of the series field effect transistor (Q3) is fashioned as a thin-film resistor.

Claim 12

The microwave attenuation element according to claim 8, wherein the resistors (R11, R22) connected parallel to the drain-source paths of the parallel field effect transistors (Q1, Q2) are fashioned as implantation resistors.

Claim 13

The microwave attenuation element according to claim 8, wherein the capacitances of the capacitors of the line simulation are of such size that the influence of the capacitances of the field effect transistors (Q1, Q2, Q3) and of other parasitic capacitors of the attenuation element is slight in comparison thereto.

Claim 14

A monolithically integratable microwave attenuation element that has at least three field effect transistors (Q1, Q2, Q3) arranged in a P1 structure, the PI structure having at least two terminal ports for a signal path and having control terminals, comprising: drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in a PI configuration; and a respective resistor (R11, R22, R33) connected parallel to each of the drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in the PI configuration; a capacitor (CP1, CP2) connected in parallel with each of the terminal ports, the respective capacitor forming a line simulation of concentrated elements together with inductances (LB1, LB2) of leads connected to the terminal ports and together with external capacitors (CE1, CE2) connected to the terminal ports; capacitances of the capacitors of the line simulation being of such size that the influence of the capacitances of the field effect transistors (Q1, Q2, Q3) and of other parasitic capacitors of the attenuation element is slight in comparison thereto.

Claim 15

A monolithically integratable microwave attenuation element that has at least three field effect transistors (Q1, Q2, Q3) arranged in a P1 structure, the PI structure having at least two terminal ports for a signal path and having control terminals, comprising: drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in a PI configuration; and a respective resistor (R11, R22, R33) connected parallel to each of the drain-source paths of the field effect transistors (Q1, Q2, Q3) arranged in the PI configuration; a capacitor (CP1, CP2) connected in parallel with each of the terminal ports, the respective capacitor forming a line simulation of concentrated elements together with inductances (LB1, LB2) of leads connected to the terminal ports and together with external capacitors (CE1, CE2) connected to the terminal ports; capacitances of the capacitors of the line simulation being of such size that the influence of the capacitances of the field effect transistors (Q1, Q2, Q3) and of other parasitic capacitors of the attenuation element is slight in comparison thereto.

Claim 16

The microwave attenuation element according to claim 12, wherein one of the transistors is a series field effect transistor (Q3) in the PI configuration and wherein the resistor (R33) connected parallel to the drain-source path of the series field effect transistor (Q3) is fashioned as a thin-film resistor.

Claim 17

The microwave attenuation element according to claim 12, wherein two of the transistors are parallel field effect transistors (Q1, Q2) in the PI configuration and wherein the resistors (R11, R22) connected parallel to the drain-source paths of the parallel field effect transistors (Q1, Q2) are fashioned as implantation resistors.

Claim 18

The microwave attenuation element according to claim 12, wherein one of the transistors in the PI configuration is a series field effect transistor (Q3), and wherein the series field effect transistor (Q3) can be completely inhibited with a suitable control voltage.

Claim 19

The microwave attenuation element according to claim 12, wherein two of the transistors in the PI configuration are parallel field effect transistors (Q1, Q2), and wherein the parallel field effect transistors (Q1, Q2) can be completely inhibited with a suitable control voltage.

Claim 20

The microwave attenuation element according to claim 12, wherein control voltages of the field effect transistors (Q1, Q2, Q3) can have more than two values and are applied to the control terminals.