Patent US4994888A successfully refreshed from Google Patents.
US4994888A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic semiconductor device having CCD, bipolar and MOS structures
Assignee: Toshiba Corp
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Filing: 1990-05-18
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Granted: 1991-02-19
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Expires: 2010-05-18
Abstract
Abstract A semiconductor device comprising a semiconductor chip formed of a substrate of a first conductivity type and an epitaxial layer of the first conductivity type formed on the substrate, a charge transfer device section formed in the epitaxial layer and driven by a given clock, and a preset region of a second conductivity type formed adjacent to the charge transfer device section in the semiconductor ship. The preset region includes a first layer of the second conductivity type formed in a boundary portion between the substrate and the epitaxial layer, a second layer of the second conductivity type formed on the first layer the epitaxial layer, and a third layer of the second conductivity type formed on the second layer in the epitaxial layer to reach the surface of the substrate. The maximum value of the second conductivity type impurity concentration of the third layer is set smaller than the maximum value of the second conductivity type impurity concentration of the first layer. A bipolar transistor section is formed in the third layer.
Inventors
- 👤 Minoru Taguchi
- 👤 Kazuo Kihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:29
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/01; H10D44/041; H10D44/40; H10D44/45; H10D84/00; H10D84/40; H10D84/401; H10D84/891
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
72 words
A semiconductor device including a charge transfer device, comprising a bipolar transistor section, a MOS transistor section and a charge transfer device section which are formed in the same substrate, characterized in that a first well region in which said bipolar transistor section is formed has an impurity concentration profile which has at least three peaks of variation in the concentration of the same conductivity type impurity in a depth direction thereof.
Claim 2
Dependent Claim
72 words
A semiconductor device including a charge transfer device, comprising a bipolar transistor section, a MOS transistor section and a charge transfer device section which are formed in the same substrate, characterized in that a first well region in which said bipolar transistor section is formed has an impurity concentration profile which has at least three peaks of variation in the concentration of the same conductivity type impurity in a depth direction thereof.
Claim 3
Dependent Claim
87 words
A semiconductor device including a charge transfer device, comprising a bipolar transistor section, a MOS transistor section and a charge transfer device section surrounded by an N-type region, wherein said bipolar transistor section, MOS transistor section and charge transfer device section are formed in the same substrate and a first well region in which said bipolar transistor section is formed has an impurity concentration profile which has at least three peaks of variation in the concentration of the same conductivity type impurity in a depth direction thereof.
Claim 4
Dependent Claim
87 words
A semiconductor device including a charge transfer device, comprising a bipolar transistor section, a MOS transistor section and a charge transfer device section surrounded by an N-type region, wherein said bipolar transistor section, MOS transistor section and charge transfer device section are formed in the same substrate and a first well region in which said bipolar transistor section is formed has an impurity concentration profile which has at least three peaks of variation in the concentration of the same conductivity type impurity in a depth direction thereof.
Claim 5
Dependent Claim
84 words
A semiconductor device including a charge transfer device, comprising a bipolar transistor section, a MOS transistor section and a charge transfer device section which are formed in the same substrate, wherein a first well region in which said bipolar transistor section is formed and a second well region in which said MOS transistor section is formed each have an impurity concentration profile which has at least three peaks of variation in the concentration of the same conductivity type impurity in a depth direction thereof.
Claim 6
Dependent Claim
84 words
A semiconductor device including a charge transfer device, comprising a bipolar transistor section, a MOS transistor section and a charge transfer device section which are formed in the same substrate, wherein a first well region in which said bipolar transistor section is formed and a second well region in which said MOS transistor section is formed each have an impurity concentration profile which has at least three peaks of variation in the concentration of the same conductivity type impurity in a depth direction thereof.
Claim 7
Dependent Claim
174 words
A semiconductor device comprising: a semiconductor chip formed of a substrate of a first conductivity type and an epitaxial layer of the first conductivity type formed on said substrate; a charge transfer device section formed in said epitaxial layer and driven by a given clock; a preset region of a second conductivity type formed adjacent to said charge transfer device section in said semiconductor chip, said preset region including a first layer of the second conductivity type formed in a boundary portion between said substrate and said epitaxial layer, a second layer of the second conductivity type formed on said first layer in said epitaxial layer, and a third layer of the second conductivity type formed on said second layer in said epitaxial layer to reach the surface of said substrate, and the maximum value of the second conductivity type impurity concentration of said third layer being set smaller than the maximum value of the second conductivity type impurity concentration of said first layer; and a bipolar transistor section formed in said third layer.
Claim 8
Dependent Claim
174 words
A semiconductor device comprising: a semiconductor chip formed of a substrate of a first conductivity type and an epitaxial layer of the first conductivity type formed on said substrate; a charge transfer device section formed in said epitaxial layer and driven by a given clock; a preset region of a second conductivity type formed adjacent to said charge transfer device section in said semiconductor chip, said preset region including a first layer of the second conductivity type formed in a boundary portion between said substrate and said epitaxial layer, a second layer of the second conductivity type formed on said first layer in said epitaxial layer, and a third layer of the second conductivity type formed on said second layer in said epitaxial layer to reach the surface of said substrate, and the maximum value of the second conductivity type impurity concentration of said third layer being set smaller than the maximum value of the second conductivity type impurity concentration of said first layer; and a bipolar transistor section formed in said third layer.
Claim 9
Dependent Claim
57 words
A device according to claim 4, further comprising: means formed in that portion of said semiconductor chip which lies between said charge transfer device section and said bipolar transistor section, for preventing charges which are caused in said semiconductor chip by a clock of said charge transfer device section from being transferred into said bipolar transistor section.
Claim 10
Dependent Claim
41 words
A device according to claim 5, further comprising: a MOS transistor section formed adjacent to said charge transfer device section in said epitaxial layer, said charge transfer device section being arranged between said bipolar transistor section and said MOS transistor section.
Claim 11
Dependent Claim
34 words
A device according to claim 4, further comprising: a MOS transistor section formed in said epitaxial layer, said bipolar transistor section being arranged between said charge transfer device section and said MOS transistor section.
Claim 12
Dependent Claim
103 words
A semiconductor device including a charge transfer device, comprising a bipolar transistor section, a MOS transistor section and a charge transfer device section which is surrounded by an N-type region, wherein said bipolar transistor section, MOS transistor section and charge transfer device section are formed in the same substrate, and a first well region in which said bipolar transistor section is formed and a second well region in which said MOS transistor section is formed each have an impurity concentration profile which has at least two peaks of variation in the concentration of the same conductivity type impurity in a depth direction thereof.
Claim 13
Dependent Claim
103 words
A semiconductor device including a charge transfer device, comprising a bipolar transistor section, a MOS transistor section and a charge transfer device section which is surrounded by an N-type region, wherein said bipolar transistor section, MOS transistor section and charge transfer device section are formed in the same substrate, and a first well region in which said bipolar transistor section is formed and a second well region in which said MOS transistor section is formed each have an impurity concentration profile which has at least two peaks of variation in the concentration of the same conductivity type impurity in a depth direction thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-18 | 1994-08-20 | 1995-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-18 | 1998-08-20 | 1999-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-18 | 2002-08-20 | 2003-02-19 | $7700.00 | Window Closed / Lapsed |