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US4990365A
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Method for producing silicon boronitride layers
Assignee: Siemens AG
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Filing: 1989-06-16
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Granted: 1991-02-05
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Expires: 2009-06-16
Abstract
Abstract To create silicon boronitride layers that are utilized as intermetallization layers and/or as final passivation layers, the present invention provides a method wherein fluid initial compounds that already molecularly contain a part of the target composition of the silicon boronitride layer to be produced are utilized, and deposited through chemical vapor deposition in an alternating electromagnetic field. The silicon boronitride layers produced in this fashion have a dielectric constant whose value is below 4 epsilon o and are distinguished by good insulating and blocking properties and by a high break down strength.
Inventors
- 👤 Helmuth Treichel
- 👤 Oswald Spindler
- 👤 Bernhard Neureither
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:29
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/44; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
104 words
A method for producing a silicon boronitride layer having a dielectric constant ε of less than 4 ε o by chemical vapor deposition in an alternating electromagnetic field, comprising the step of utilizing as a fluid initial compound a compound chosen from the group consisting of: B 3 N 3 H 3 (SiR 3 ) 3 wherein R is chosen from the group consisting of hydrogen, NH 2 , and alkyl; B 3 N 3 (SiR 3 ) 6 wherein R is chosen from the group consisting of hydrogen, and alkyl; and the compound is introduced into a reactor chamber with a carrier gas.
Claim 2
Independent Claim
104 words
A method for producing a silicon boronitride layer having a dielectric constant ε of less than 4 ε o by chemical vapor deposition in an alternating electromagnetic field, comprising the step of utilizing as a fluid initial compound a compound chosen from the group consisting of: B 3 N 3 H 3 (SiR 3 ) 3 wherein R is chosen from the group consisting of hydrogen, NH 2 , and alkyl; B 3 N 3 (SiR 3 ) 6 wherein R is chosen from the group consisting of hydrogen, and alkyl; and the compound is introduced into a reactor chamber with a carrier gas.
Claim 3
Dependent Claim
31 words
The method of claim 1 including the step of introducing into the reactor chamber at least one gaseous compound chosen from the group consisting of N 2 and NH 3 .
Claim 4
Dependent Claim
29 words
The method of claim 1 including the step of using B 3 N 3 (SiR 3 ) 6 as the fluid initial compound, wherein R is NH 2 .
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein the carrier gas is chosen from the group consisting of helium and nitrogen.
Claim 6
Dependent Claim
119 words
The method of claim 1 including the steps of setting a deposition temperature to approximately 300° C. to about 450° C., a process pressure to approximately 0.1 to about 1.3 kPa, a radio frequency power to approximately 300 to about 800 W, the electrode spacing to approximately 0.3 to about 0.6 cm, a flow of the carrier gas flow in the chamber is set to approximately 100 to about 600 sccm, a flow of N 2 and NH 3 is set to 0 to about 100 sccm, a flow of SiH 4 and Si 2 H 6 is set to 0 to about 500 sccm, and an evaporator temperature is set to approximately 25° C. to about 80° C.
Claim 7
Independent Claim
150 words
A method for producing a silicon boronitride layer having a dielectric constant ε of less than 4 ε o by chemical vapor deposition in an alternating electromagnetic field, comprising the steps of: utilizing at least one fluid, low-molecular initial compound chosen from the group consisting of: B 3 N 3 H 6 ; B 3 N 3 H 3 (SiR 3 ) 3 wherein R is hydrogen, NH 2 , or alkyl; and B 3 N 3 (SiR 3 ) 6 , wherein R is hydrogen or an alkyl and wherein when B 3 N 3 H 6 is used additionally one compound chosen from the group consisting of SiH 4 and Si 2 H 6 is additionally introduced into the reactor chamber in gaseous form; and introducing into a reactor chamber the fluid, low-molecular initial compound with a carrier gas chosen from the group consisting of helium and nitrogen.
Claim 8
Independent Claim
150 words
A method for producing a silicon boronitride layer having a dielectric constant ε of less than 4 ε o by chemical vapor deposition in an alternating electromagnetic field, comprising the steps of: utilizing at least one fluid, low-molecular initial compound chosen from the group consisting of: B 3 N 3 H 6 ; B 3 N 3 H 3 (SiR 3 ) 3 wherein R is hydrogen, NH 2 , or alkyl; and B 3 N 3 (SiR 3 ) 6 , wherein R is hydrogen or an alkyl and wherein when B 3 N 3 H 6 is used additionally one compound chosen from the group consisting of SiH 4 and Si 2 H 6 is additionally introduced into the reactor chamber in gaseous form; and introducing into a reactor chamber the fluid, low-molecular initial compound with a carrier gas chosen from the group consisting of helium and nitrogen.
Claim 9
Dependent Claim
31 words
The method of claim 6 including the step of introducing additionally at least one gaseous compound chosen from the group consisting of N 2 and NH 3 into the reactor chamber.
Claim 10
Dependent Claim
105 words
The method of claim 6 including the steps of setting a deposition temperature to approximately 300° C. to about 450° C., a process pressure to approximately 0.1 to about 1.3 kPa, a radio frequency power to approximately 300 to about 800 W, an electrode spacing to approximately 0.3 to about 0.6 cm, a carrier gas flow to approximately IOO to about 600 sccm, a flow of N 2 and NH 3 to 0 to about 100 sccm, a flow of SiH 4 and Si 2 H 6 to 0 to about 500 sccm, and a evaporator temperature to approximately 25° C. to about 80° C.
Claim 11
Dependent Claim
15 words
The method of claim 6 wherein the fluid, low-molecular initial compound has the structure: ##STR4##
Claim 12
Dependent Claim
15 words
The method of claim 6 wherein the fluid, low-molecular initial compound has the structure: ##STR5##
Claim 13
Dependent Claim
15 words
The method of claim 6 wherein the fluid, low-molecular initial compound has the structure: ##STR6##
Claim 14
Dependent Claim
15 words
The method of claim 6 wherein the fluid, low-molecular initial compound has the structure: ##STR7##
References Cited (Backward Citations)
No citation records indexed.
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