US4989934A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic integrated transceiver of III-V devices on silicon
Assignee: Kopin Corp
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Filing: 1989-11-03
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Granted: 1991-02-05
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Expires: 2009-11-03
Abstract
Abstract An monolithic integrated transceiver formed on an Si substrate comprising: a III-V compound light source, a III-V compound light detector and a pyramidal groove formed in the substrate for aligning an optical fiber with said transmitter.
Inventors
- 👤 Paul M. Zavracky
- 👤 Matthew M. Zavracky
- 👤 John C. C. Fan
- 👤 Jack P. Salerno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:44
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4219; G02B6/4228; G02B6/423; G02B6/4202; G02B6/4204; G02B6/4246; H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; G02B6/4231
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
119 words
A monolithic integrated transceiver formed on a silicon substrate for converting first optical signals to first electrical signals in one path and second electrical signals to second optical signals in a second path comprising: a. a III-V compound light source for transmitting said first optical signals to a fiber which is aligned with said light source in a pyramidal anisotropically back etched groove formed in said silicon substrate along said one path; and b. a III-V compound light detector for receiving said second optical signals in said second path and for converting said second optical signals to said second electrical signals and electrical circuitry coupled to said detector responsive to said second electric signals for generating output electrical signals.
Claim 2
Dependent Claim
119 words
A monolithic integrated transceiver formed on a silicon substrate for converting first optical signals to first electrical signals in one path and second electrical signals to second optical signals in a second path comprising: a. a III-V compound light source for transmitting said first optical signals to a fiber which is aligned with said light source in a pyramidal anisotropically back etched groove formed in said silicon substrate along said one path; and b. a III-V compound light detector for receiving said second optical signals in said second path and for converting said second optical signals to said second electrical signals and electrical circuitry coupled to said detector responsive to said second electric signals for generating output electrical signals.
Claim 3
Dependent Claim
21 words
The monolithic integrated optoelectric transceiver of claim 1 wherein said III-V compound light source and detector is formed of gallium arsenide.
Claim 4
Dependent Claim
16 words
The monolithic integrated optoelectric transceiver of claim 1 wherein said electrical circuitry comprises a TTL driver.
Claim 5
Dependent Claim
16 words
The monolithic integrated optoelectric transceiver of claim 1 wherein said electrical circuitry comprises a CMOS driver.
Claim 6
Dependent Claim
33 words
The monolithic integrated optoelectric transceiver of claim 1 further comprising means for coupling the output electrical signals to the III-V compound light source to form input electrical signals to enable said light source.
Claim 7
Dependent Claim
18 words
The monolithic integrated optoelectric transceiver of claim 5 wherein said groove comprises an anisotropically back etched pyramidal channel.
Claim 8
Dependent Claim
39 words
The monolithic integrated optoelectric transceiver of claim 5 wherein a second groove is formed in said substrate and a spherical lens is provided in said second groove for focusing the optical signals in said second path on the detector.
Claim 9
Dependent Claim
17 words
The monolithic integrated optoelectric transceiver of claim 1 wherein the III-V compound light source comprises a laser.
Claim 10
Dependent Claim
17 words
The monolithic integrated optoelectric transceiver of claim 1 wherein the III-V compound light source comprises a L.E.D.
Claim 11
Dependent Claim
28 words
The monolithic integrated optoelectric transceiver of claim 1 further comprising a window formed in said silicon substrate for growing epitaxial gallium arsenide used in said III-V light source.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-04 | 1994-08-06 | 1995-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-04 | 1998-08-06 | 1999-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-04 | 2002-08-06 | 2003-02-05 | $7700.00 | Window Closed / Lapsed |