Patent US4988609A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4988609A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming micro patterns

Assignee: Toshiba Corp
•
Filing: 1988-06-13
•
Granted: 1991-01-29
•
Expires: 2008-06-13
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract In a patterning method according to this invention, a surface region of a resist layer is solution-retarded by a developer, and, then, the resist layer is patterned. Therefore, a desired shape of a side wall of the resist layer may be obtained by varying a solubility of the resist layer, with the result that a resist pattern with the side wall orthogonal to a surface of the substrate or the overhung side may be formed.

Inventors

  • 👤 Hidetsuna Hashimoto
  • 👤 Tiharu Kato
  • 👤 Hitoshi Tsuji

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 16:24
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 85 words
A method of forming micro patterns comprising the steps of: forming a resist layer on a layer to be processed; exposing said entire resist layer to rays of light; thereafter thermally heating said resist layer, to form a layer on a surface region of said resist layer, with said formed layer being solution-retarded by a developer; immediately following the thermally heating step, exposing only selected portions of said resist layer to rays of light, thereby forming a predetermined pattern thereon; and developing said resist layer.
Claim 2
Independent Claim 85 words
A method of forming micro patterns comprising the steps of: forming a resist layer on a layer to be processed; exposing said entire resist layer to rays of light; thereafter thermally heating said resist layer, to form a layer on a surface region of said resist layer, with said formed layer being solution-retarded by a developer; immediately following the thermally heating step, exposing only selected portions of said resist layer to rays of light, thereby forming a predetermined pattern thereon; and developing said resist layer.
Claim 3
Dependent Claim 18 words
The method of forming micro patterns according claim 1, wherein said first-recited rays of light are ultraviolet rays.
Claim 4
Dependent Claim 19 words
The method of forming micro patterns according to claim 1, wherein said first-recited rays of light are deep-ultraviolet rays.
Claim 5
Dependent Claim 23 words
The method of forming micro patterns according to claim 1, wherein said thermally heating of said resist layer is performed in an atmosphere.
Claim 6
Dependent Claim 20 words
The method of forming micro patterns according to claim 1, wherein said resist layer is of the positive resist type.
Claim 7
Independent Claim 84 words
A method of forming micro patterns comprising the steps of: forming a resist layer on a layer to be processed; exposing said entire resist layer to rays of light; thereafter thermally heating said resist layer in an ammonia gas, to form a layer on a surface region of said resist layer, with said formed layer being solution-retarded by a developer; thereafter exposing only selected portions of said resist layer to rays of light, thereby forming a predetermined pattern thereon; and developing said resist layer.
Claim 8
Independent Claim 84 words
A method of forming micro patterns comprising the steps of: forming a resist layer on a layer to be processed; exposing said entire resist layer to rays of light; thereafter thermally heating said resist layer in an ammonia gas, to form a layer on a surface region of said resist layer, with said formed layer being solution-retarded by a developer; thereafter exposing only selected portions of said resist layer to rays of light, thereby forming a predetermined pattern thereon; and developing said resist layer.

References Cited (Backward Citations)

JPS5532088A Cited
US4863827A Cited
US4775609A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-01-28 1994-07-30 1995-01-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-01-28 1998-07-30 1999-01-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-01-28 2002-07-30 2003-01-29 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag