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US4987430A
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Organic semiconductor device based on phthalocyanine
Assignee: Individual
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Filing: 1988-11-08
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Granted: 1991-01-22
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Expires: 2008-11-08
Abstract
Abstract The present invention relates to an organic semiconductor device based on phthalocyanine. According to the invention, the device comprises a substrate constituted by a layer (10) of a conductive material covered by a layer (20) of a dielectric material, and a coating deposited on the layer of dielectric material and comprising an extrinsic molecular semiconductor (30) constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine, and an intrinsic molecular semiconductor (40) constituted by a phthalocyanine giving rise to free radicals.
Inventors
- 👤 Christian Clarisse
- 👤 Michel Le Contellec
- 👤 Marie-Therese Riou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:14
CPC Classifications
H; H10; H10K; H10K10/00; H10K10/40; H10K10/46; H10K10/462; H10K10/466; H10K85/00; H10K85/30; H10K85/311
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
64 words
A semiconductor device comprising: a substrate constituted by: a layer of semiconductor material, covered by; a layer of dielectric material; and a coating deposited on the layer of dielectric material and constituted by: an extrinsic molecular semiconductor constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine; and an intrinsic molecular semiconductor constituted by a phthalocyanine giving rise to free radicals.
Claim 2
Dependent Claim
64 words
A semiconductor device comprising: a substrate constituted by: a layer of semiconductor material, covered by; a layer of dielectric material; and a coating deposited on the layer of dielectric material and constituted by: an extrinsic molecular semiconductor constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine; and an intrinsic molecular semiconductor constituted by a phthalocyanine giving rise to free radicals.
Claim 3
Dependent Claim
25 words
A device according to claim 1, wherein the intrinsic molecular semiconductor constituted by a phthalocyanine giving rise to free radicals is a rare earth diphthalocyanine.
Claim 4
Dependent Claim
25 words
A device according to claim 1, wherein the intrinsic molecular semiconductor constituted by a phthalocyanine giving rise to free radicals is yttrium or scandium diphthalocyanine.
Claim 5
Dependent Claim
24 words
A device according to claim 1, wherein the intrinsic molecular semiconductor constituted by a phthalocyanine giving rise to free radicals is an actinide diphthalocyanine.
Claim 6
Dependent Claim
23 words
A device according to claim 1, wherein the intrinsic molecular semiconductor constituted by a phthalocyanine giving rise to free radicals is lithium phthalocyanine.
Claim 7
Dependent Claim
35 words
A device according to claim 1, wherein the substrate is constituted by a layer of silicon covered by a layer of SiO 2 , with said layer SiO 2 constituting the layer of dielectric material.
Claim 8
Dependent Claim
40 words
A device according to claim 1, wherein the substrate is constituted by a layer of silicon covered by a layer of Si 3 N 4 , with the layer of Si 3 N 4 constituting the layer of dielectric material.
Claim 9
Dependent Claim
19 words
A device according to claim 1, wherein two separate areas of electrically conductive material are deposited on the coating.
Claim 10
Dependent Claim
45 words
A device according to claim 8, wherein the two separate areas of electrically conductive material deposited on the coating serve as a source and as a drain, while a contact made on the layer of semiconductor material constituting the substrate serves as a gate electrode.
Claim 11
Dependent Claim
41 words
A device according to claim 9, wherein the coating deposited on the layer of dielectric material includes the intrinsic molecular semiconductor layer constituted by the phthalocyanine giving rise to free radicals and having a thickness of less than 1×10 -7 m.
Claim 12
Dependent Claim
41 words
A device according to claim 7, wherein the coating deposited on the layer of dielectric material includes the intrinsic molecular semiconductor layer constituted by the phthalocyanine give rise to free radicals and having a thickness of greater than 1×10 -7 m.
Claim 13
Dependent Claim
50 words
A device according to claim 1, wherein the coating deposited on the layer of dielectric material includes the extrinsic molecular semiconductor layer constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine, and having a thickness lying in the range 1×10 -7 m and 5×10 -7 m.
Claim 14
Dependent Claim
124 words
A semiconductor device constituting a transistor of the field effect type and comprising: a substrate constituted by: a layer of a conductor material covered by: a layer of a dielectric material; a coating deposited onto the layer of dielectric material and comprising: an extrinsic molecular semiconductor constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine; and by an intrinsic molecular semiconductor constituted by a phthalocyanine giving rise to free radicals and having a thickness of less than 1×10 -7 m; two separate areas of electrically conductive material deposited on the coating an serving respectively as a source and as a drain; and a contact made with the layer of conductor material in the substrate and serving as a gate electrode.
Claim 15
Dependent Claim
124 words
A semiconductor device constituting a transistor of the field effect type and comprising: a substrate constituted by: a layer of a conductor material covered by: a layer of a dielectric material; a coating deposited onto the layer of dielectric material and comprising: an extrinsic molecular semiconductor constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine; and by an intrinsic molecular semiconductor constituted by a phthalocyanine giving rise to free radicals and having a thickness of less than 1×10 -7 m; two separate areas of electrically conductive material deposited on the coating an serving respectively as a source and as a drain; and a contact made with the layer of conductor material in the substrate and serving as a gate electrode.
Claim 16
Dependent Claim
62 words
A semiconductor device comprising: a substrate constituted by: a layer of conductor material, covered by; a layer of dielectric material; and a coating deposited on the layer of dielectric material and constituted by: an extrinsic molecular semiconductor constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine; and an intrinsic molecular semiconductor constituted by an yttrium or scandium diphthalocyanine.
Claim 17
Dependent Claim
62 words
A semiconductor device comprising: a substrate constituted by: a layer of conductor material, covered by; a layer of dielectric material; and a coating deposited on the layer of dielectric material and constituted by: an extrinsic molecular semiconductor constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine; and an intrinsic molecular semiconductor constituted by an yttrium or scandium diphthalocyanine.
Claim 18
Dependent Claim
35 words
A device according to claim 14, wherein the substrate is constituted by a layer of silicon covered by a layer of SiO 2 , with said layer SiO 2 constituting the layer of dielectric material.
Claim 19
Dependent Claim
31 words
A device according to claim 14, wherein the substrate is constituted by a layer of silicon covered by a layer of Si 3 N 4 constituting the layer of dielectric material.
Claim 20
Dependent Claim
19 words
A device according to claim 14, wherein two separate areas of electrically conductive material are deposited on the coating.
Claim 21
Dependent Claim
45 words
A device according to claim 17, wherein the two separate areas of electrically conductive material deposited on the coating serve as a source and as a drain, while a contact made on the layer of semiconductor material constituting the substrate serves as a gate electrode.
Claim 22
Dependent Claim
41 words
A device according to claim 18, wherein the coating deposited on the layer of dielectric material includes the intrinsic molecular semiconductor layer constituted by the phthalocyanine giving rise to free radicals and having a thickness of less than 1×10 -7 m.
Claim 23
Dependent Claim
41 words
A device according to claim 17, wherein the coating deposited on the layer of dielectric material includes the intrinsic molecular semiconductor layer constituted by the phthalocyanine giving rise to free radicals and having a thickness of greater than 1×10 -7 m.
Claim 24
Dependent Claim
48 words
A device according to claim 14, wherein the coating deposited on the layer of dielectric material includes the extrinsic semiconductor layer constituted by a monophthalocyanine of a divalent metal or by hydrogenated monophthalocyanine, and having a thickness lying in the range 1×10 -7 m and 5×10 -7 m.
Claim 25
Dependent Claim
60 words
A semiconductor device comprising: a substrate constituted by: a layer of conductor material, covered by; a layer of dielectric material; and a coating deposited on the layer of dielectric material and constituted by: an extrinsic molecular semiconductor constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine; and an intrinsic molecular semiconductor constituted by an actinide diphthalocyanine.
Claim 26
Dependent Claim
60 words
A semiconductor device comprising: a substrate constituted by: a layer of conductor material, covered by; a layer of dielectric material; and a coating deposited on the layer of dielectric material and constituted by: an extrinsic molecular semiconductor constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine; and an intrinsic molecular semiconductor constituted by an actinide diphthalocyanine.
Claim 27
Dependent Claim
35 words
A device according to claim 22, wherein the substrate is constituted by a layer of silicon covered by a layer of SiO 2 , with said layer SiO 2 constituting the layer of dielectric material.
Claim 28
Dependent Claim
40 words
A device according to claim 22, wherein the substrate is constituted by a layer of silicon covered by a layer of Si 3 N 4 , with the layer of Si 3 N 4 constituting the layer of dielectric material.
Claim 29
Dependent Claim
19 words
A device according to claim 22, wherein two separate areas of electrically conductive material are deposited on the coating.
Claim 30
Dependent Claim
45 words
A device according to claim 25, wherein the two separate areas of electrically conductive material deposited on the coating serve as a source and as a drain, while a contact made on the layer of semiconductor material constituting the substrate serves as a gate electrode.
Claim 31
Dependent Claim
41 words
A device according to claim 26, wherein the coating deposited on the layer of dielectric material includes the intrinsic molecular semiconductor layer constituted by the phthalocyanine giving rise to free radicals and having a thickness of less than 1×10 -7 m.
Claim 32
Dependent Claim
41 words
A device according to claim 25, wherein the coating deposited on the layer of dielectric material includes the intrinsic molecular semiconductor layer constituted by the phthalocyanine giving rise to free radicals and having a thickness of greater than 1×10 -7 m.
Claim 33
Dependent Claim
48 words
A device according to claim 22, wherein the coating deposited on the layer of dielectric material includes the extrinsic semiconductor layer constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine, and having a thickness lying in the range 1×10-7 m and 5×10 -7 m.
References Cited (Backward Citations)
US4164431A
Cited
JPH0231175A
Cited
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