Patent US4986216A successfully refreshed from Google Patents.
US4986216A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor manufacturing apparatus
Assignee: Mitsubishi Electric Corp
•
Filing: 1989-07-31
•
Granted: 1991-01-22
•
Expires: 2009-07-31
Abstract
Abstract A semiconductor manufacturing apparatus includes members for uniformly supplying a reactant gas into a chamber and uniformly discharging it from the chamber, and two rectifying members disposed on opposite sides of a substrate for making the flow rate and the direction of the reactant gas constant. This arrangement ensures that the surface of the substrate is processed with a high degree of accuracy.
Inventors
- 👤 Toshiaki Ohmori
- 👤 Takaaki Fukumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:57
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
156 words
A semiconductor manufacturing apparatus comprising: a chamber; means for supporting a semiconductor substrate within said chamber; gas supply means disposed in said chamber opposite a substrate supported by said means for supporting for supplying a gas into said chamber; first rectifying means disposed between said gas supply means and the substrate dividing said chamber for making the flow rate and the direction of the gas supplied to the substrate from said gas supply means constant; discharge means disposed on the opposite side of the substrate from said first rectifying means for discharging the gas from said chamber; and second rectifying means disposed between said gas discharge means and the substrate dividing said chamber for making the flow rate and the direction of the gas flow away from the substrate constant wherein at least one of said first and second rectifying means comprises a polymeric filter having pores ranging in size from 0.01 μm to 100 μm.
Claim 2
Dependent Claim
156 words
A semiconductor manufacturing apparatus comprising: a chamber; means for supporting a semiconductor substrate within said chamber; gas supply means disposed in said chamber opposite a substrate supported by said means for supporting for supplying a gas into said chamber; first rectifying means disposed between said gas supply means and the substrate dividing said chamber for making the flow rate and the direction of the gas supplied to the substrate from said gas supply means constant; discharge means disposed on the opposite side of the substrate from said first rectifying means for discharging the gas from said chamber; and second rectifying means disposed between said gas discharge means and the substrate dividing said chamber for making the flow rate and the direction of the gas flow away from the substrate constant wherein at least one of said first and second rectifying means comprises a polymeric filter having pores ranging in size from 0.01 μm to 100 μm.
Claim 3
Dependent Claim
28 words
The semiconductor manufacturing apparatus according to claim 1 wherein said gas supply means includes a gas supply tube containing a plurality of gas venting holes along the tube.
Claim 4
Dependent Claim
17 words
The semiconductor manufacturing apparatus according to claim 2 wherein said gas supply tube has a spiral form.
Claim 5
Dependent Claim
26 words
The semiconductor manufacturing apparatus according to claim 2 wherein said gas venting holes are formed in the said gas supply tube facing away from the substrate.
Claim 6
Dependent Claim
23 words
The semiconductor manufacturing apparatus according to claim 2 wherein said gas venting holes have a diameter ranging from 100 μm to 10 mm.
Claim 7
Dependent Claim
23 words
The semiconductor manufacturing apparatus according to claim 1 wherein said gas discharge means includes a discharge tube containing a plurality of discharge holes.
Claim 8
Dependent Claim
16 words
The semiconductor manufacturing apparatus according to claim 6 wherein said discharge tube has a spiral form.
Claim 9
Dependent Claim
21 words
The semiconductor manufacturing apparatus according to claim 6 wherein said discharge holes are formed in said discharge tube facing the substrate.
Claim 10
Dependent Claim
22 words
The semiconductor manufacturing apparatus according to claim 6 wherein said discharge holes have a diameter ranging from 100 μm to 10 mm.
Claim 11
Dependent Claim
23 words
The semiconductor manufacturing apparatus according to claim 1 wherein said filter has pores having a size ranging from 0.05 μm to 10 mm.
Claim 12
Dependent Claim
15 words
The semiconductor manufacturing apparatus according to claim 1 including driving means for rotating the substrate.
Claim 13
Dependent Claim
56 words
The semiconductor manufacturing apparatus according to claim 1 wherein said gas supply means is disposed in a first portion of said chamber wherein said gas discharge means is disposed in a second portion of said chamber and wherein said means for supporting said semiconductor substrate is disposed in said chamber between said first and second portions.
Claim 14
Dependent Claim
161 words
A semiconductor manufacturing apparatus comprising: a chamber; means for supporting a semiconductor substrate within said chamber; gas supply means disposed in said chamber opposite a substrate supported by said means for supporting for supplying a gas into said chamber; first rectifying means disposed between said gas supply means and the substrate dividing said chamber for making the flow rate and the direction of the gas supplied to the substrate from said gas supply means constant; discharge means disposed on the opposite side of the substrate from said first rectifying means for discharging the gas from said chamber; and second rectifying means disposed between said gas discharge means and the substrate dividing said chamber for making the flow rate and the direction of the gas flow away from the substrate constant wherein at least one of said gas supply means and said discharge means includes a spiral tube containing a plurality of holes along the tube for the passage of a gas.
Claim 15
Dependent Claim
161 words
A semiconductor manufacturing apparatus comprising: a chamber; means for supporting a semiconductor substrate within said chamber; gas supply means disposed in said chamber opposite a substrate supported by said means for supporting for supplying a gas into said chamber; first rectifying means disposed between said gas supply means and the substrate dividing said chamber for making the flow rate and the direction of the gas supplied to the substrate from said gas supply means constant; discharge means disposed on the opposite side of the substrate from said first rectifying means for discharging the gas from said chamber; and second rectifying means disposed between said gas discharge means and the substrate dividing said chamber for making the flow rate and the direction of the gas flow away from the substrate constant wherein at least one of said gas supply means and said discharge means includes a spiral tube containing a plurality of holes along the tube for the passage of a gas.
Claim 16
Dependent Claim
18 words
The semiconductor manufacturing apparatus according to claim 13 wherein said holes are disposed facing away from the substrate.
Claim 17
Dependent Claim
16 words
The semiconductor manufacturing apparatus according to claim 13 wherein said holes are disposed facing the substrate.
Claim 18
Dependent Claim
21 words
The semiconductor manufacturing apparatus according to claim 13 wherein said holes have a diameter ranging from 100 μm to 10 mm.
Claim 19
Dependent Claim
23 words
The semiconductor manufacturing apparatus according to claim 13 wherein at least one of said first and second rectifying means is a polymeric filter.
Claim 20
Dependent Claim
23 words
The semiconductor manufacturing apparatus according to claim 17 wherein said filter has pores having a size ranging from 0.01 μm to 100 μm.
Claim 21
Dependent Claim
23 words
The semiconductor manufacturing apparatus according to claim 17 wherein said filter has pores having a size ranging from 0.05 μm to 10 μm.
References Cited (Backward Citations)
JPS60202937A
Cited
JPS61208222A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-21 | 1994-07-23 | 1995-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-21 | 1998-07-23 | 1999-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-21 | 2002-07-23 | 2003-01-22 | $7700.00 | Window Closed / Lapsed |