Semiconductor laser array having high power and high beam quality

Claim 2

A semiconductor laser array structure, comprising: means for producing lasing action in the structure, including at least one substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a first set of waveguides with parallel longitudinal axes; a second set of waveguides with parallel longitudinal axes; a laterally unguided diffraction region located between the first and second sets of waveguides, the diffraction region having a length approximately equal to a multiple of one half of the Talbot distance, given by the quantity nd 2 /λ, where n is a positive integer, d is the lateral periodic spacing of the waveguides in the first and second sets of waveguides, and λ is the wavelength of light, in the diffraction region, produced by the lasing action of the device; and means internal to the structure, for suppressing unwanted array modes of operation.

Claim 3

A semiconductor laser array structure as defined in claim 1, wherein: the length of the diffraction region is an odd multiple of half of the Talbot distance; and the means for suppressing unwanted array modes are inherent in the locations of the first and second sets of waveguides, the longitudinal axes of waveguides in the first set being aligned with the longitudinal axes of the waveguides in the second set in such a manner as to favor a selected array mode.

Claim 4

A semiconductor laser array structure as defined in claim 2, wherein: the longitudinal axes of the waveguides in the first set are approximately aligned with interelement regions of the waveguides in the second set to favor the 0°-phase-shift array mode and to suppress the 180°-phase-shift array mode.

Claim 5

A semiconductor laser array structure as defined in claim 2, wherein: the longitudinal axes of the waveguides in the first set are approximately aligned with the longitudinal axes of the waveguides in the second set to favor the 180°-phase-shift array mode and to suppress the 0°-phase-shift array mode.

Claim 6

A semiconductor laser array structure as defined in claim 1, wherein: the length of the diffraction region is an even multiple of half of the Talbot distance; and the means for suppressing unwanted array modes includes a structure internal to at least one of the first and second sets of waveguides.

Claim 7

A semiconductor laser array structure as defined in claim 5, wherein: the first and second sets of waveguides are antiguides; and the structure internal to at least one of the first and second sets of waveguides includes means for introducing interelement losses tending to suppress the 180°-phase-shift array mode.

Claim 8

A semiconductor laser array structure as defined in claim 1, wherein: the diffraction region is of a semiconductor material and the entire device is integrated into a monolithic structure.

Claim 9

A semiconductor laser array structure as defined in claim 1, wherein: the first and second sets of waveguides are antiguides.

Claim 10

A semiconductor laser array structure as defined in claim 1, wherein: the diffraction region is a passive planar waveguide.

Claim 11

A monolithic semiconductor laser array structure, comprising: means for producing lasing action in the structure, including a substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later former on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a first set of waveguides with parallel longitudinal axes; a second set of waveguides with parallel longitudinal axes; and a laterally unguided semiconductor diffraction region located between the first and second sets of waveguides, the diffraction region having a length approximately equal to an odd-numbered multiple of one half of the Talbot distance, given by the quantity (2n-1) (d 2 /λ), where n is a positive integer, d is the lateral periodic spacing of the waveguides in the first and second sets of waveguides, and λ is the wavelength of light, in the diffraction region, produced by the lasing action of the device; and wherein the longitudinal axes of waveguides in the first set are approximately aligned with interelement regions of the waveguides in the second set, to favor the 0°-phase-shift array mode and to suppress the 180°-phase-shift array mode.

Claim 12

A monolithic semiconductor laser array structure, comprising: means for producing lasing action in the structure, including a substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later former on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a first set of waveguides with parallel longitudinal axes; a second set of waveguides with parallel longitudinal axes; and a laterally unguided semiconductor diffraction region located between the first and second sets of waveguides, the diffraction region having a length approximately equal to an odd-numbered multiple of one half of the Talbot distance, given by the quantity (2n-1) (d 2 /λ), where n is a positive integer, d is the lateral periodic spacing of the waveguides in the first and second sets of waveguides, and λ is the wavelength of light, in the diffraction region, produced by the lasing action of the device; and wherein the longitudinal axes of waveguides in the first set are approximately aligned with interelement regions of the waveguides in the second set, to favor the 0°-phase-shift array mode and to suppress the 180°-phase-shift array mode.

Claim 13

A. monolithic semiconductor laser array structure as defined in claim 10, wherein: the first and second sets of waveguides are antiguides.

Claim 14

A monolithic semiconductor laser array structure as defined in claim 10, wherein: the electrodes for applying a voltage across the active layer include a separate electrode for independent control of current applied to the diffraction region.

Claim 15

A monolithic semiconductor laser array structure as defined in claim 10, wherein: the length of the diffraction region is approximately equal to (d 2 /λ), or half of the first Talbot length.

Claim 16

A semiconductor laser array structure, comprising: means for producing lasing action in the structure, including at least one substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a first set of waveguides with parallel longitudinal axes; a second set of waveguides with parallel longitudinal axes; a laterally unguided diffraction region located between the first and second sets of waveguides, the different region having a length selected such that light from one set of waveguides is re-imaged into the other set of waveguides, the length being a function of the lateral periodic spacing of the waveguides and the wavelength of light, in the diffraction region, produced by the lasing action of the device; and means internal to the device, for suppressing unwanted array modes of operation, wherein the longitudinal axes of the waveguides in the first set are approximately aligned with interelement regions of the waveguides in the second set, to favor the 0°-phase-shift array mode and to suppress the 180°-phase-shift array mode.

Claim 17

A semiconductor laser array structure, comprising: means for producing lasing action in the structure, including at least one substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a first set of waveguides with parallel longitudinal axes; a second set of waveguides with parallel longitudinal axes; a laterally unguided diffraction region located between the first and second sets of waveguides, the different region having a length selected such that light from one set of waveguides is re-imaged into the other set of waveguides, the length being a function of the lateral periodic spacing of the waveguides and the wavelength of light, in the diffraction region, produced by the lasing action of the device; and means internal to the device, for suppressing unwanted array modes of operation, wherein the longitudinal axes of the waveguides in the first set are approximately aligned with interelement regions of the waveguides in the second set, to favor the 0°-phase-shift array mode and to suppress the 180°-phase-shift array mode.

Claim 18

A semiconductor laser array structure, comprising: means for producing lasing action is the structure, including a substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a set of negative-index waveguides with parallel longitudinal axes, each waveguide having an antiguide core defining a waveguide element, and a laterally surrounding cladding material forming interelement regions, the waveguides having a lateral antiguide elemental width of d 0 and an interelement spacing s; wherein the waveguides, considered separately, generate laterally traveling waves that have a wavelength λ 0 , equal to approximately 2d 0 , in the antiguide core and a waveguide λ 1 in the antiguide cladding material; and wherein the interelement spacing s is selected to be approximately equal to an odd number of half-wavelengths, or mλ 1 /2, where m is an odd integer, to produce a 0°-phase-shift-array-mode resonance condition in which there is strong coupling between all elements of the array and a high degree of device coherence.

Claim 19

A semiconductor laser array structure, comprising: means for producing lasing action is the structure, including a substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a set of negative-index waveguides with parallel longitudinal axes, each waveguide having an antiguide core defining a waveguide element, and a laterally surrounding cladding material forming interelement regions, the waveguides having a lateral antiguide elemental width of d 0 and an interelement spacing s; wherein the waveguides, considered separately, generate laterally traveling waves that have a wavelength λ 0 , equal to approximately 2d 0 , in the antiguide core and a waveguide λ 1 in the antiguide cladding material; and wherein the interelement spacing s is selected to be approximately equal to an odd number of half-wavelengths, or mλ 1 /2, where m is an odd integer, to produce a 0°-phase-shift-array-mode resonance condition in which there is strong coupling between all elements of the array and a high degree of device coherence.

Claim 20

A semiconductor laser array structure as defined in claim 15, and further comprising: means within the array structure for suppressing operation in the 180°-phase-shift array mode.

Claim 21

A semiconductor laser array structure as defined in claim 16, wherein: the wavelength λ 1 of laterally traveling waves in the interelement regions is dependent on the difference in between the refractive index of the antiguide element and the refractive index of the interelement region; and the values of Δn and s are selected to provide an operating point close enough to the resonance condition to provide strong coupling between all elements of the array, but to provide in addition strong discrimination between the 0°-phase-shift mode and adjacent higher-order modes.

Claim 22

A semiconductor laser array structure as defined in claim 17, wherein the means for suppressing the 180°-phase-shift array mode includes: an interelement semiconductor structure for introducing interelement losses, which inhibit operation in the 180°-phase-shift array mode.

Claim 23

A semiconductor laser array structure as defined in claim 18, wherein the structure for introducing interelement losses includes a transverse antiguiding structure that permits significant radiation loss to the substrate.

Claim 24

A semiconductor laser array structure as defined in claim 18, wherein the structure for introducing interelement losses includes an absorbing layer providing absorption loss in the interelement regions.

Claim 25

A monolithic semiconductor laser array structure, comprising: means for producing lasing action in the structure, including a substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a first set of waveguides with parallel longitudinal axes; a second set of waveguides with parallel longitudinal axes; and a laterally unguided semiconductor diffraction region located between the first and second sets of waveguides, the diffraction region having a length approximately equal to an odd-numbered multiple of one half of the Talbot distance, given by the quantity (2n-1)(d 2 /λ), where n is a positive integer, d is the lateral periodic spacing of the waveguides in the first and second sets of waveguides, and λ is the wavelength of light, in the diffraction region, produced by the lasing action of the device; wherein the longitudinal axes of waveguides in the first set are approximately aligned with interelement regions of the waveguides in the second set, to favor the 0°-phase-shift array mode and to suppress the 180°-phase-shift array mode; wherein the first and second sets of waveguides are negative-index waveguides, each waveguide having an antiguide core defining a waveguide element, and a laterally surrounding cladding material forming interelement regions, the waveguides having a lateral antiguide elemental width of d 0 and an interelement spacing s; wherein the waveguides, considered separately, generate laterally traveling waves that have a wavelength λ 0 , equal to approximately 2d 0 , in the antiguide core and a wavelength λ 1 in the antiguide guide cladding material; and wherein the interelement spacing s is selected to be approximately equal to an odd number of half-wavelengths, or mλ 1 /2, where m is an odd integer, to produce a 0°-phase-shift-array-mode resonance condition in which there is strong coupling between all elements of the array and a high degree of device coherence.

Claim 26

A monolithic semiconductor laser array structure, comprising: means for producing lasing action in the structure, including a substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, electrodes later formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, still later formed at opposite ends of the array structure; a first set of waveguides with parallel longitudinal axes; a second set of waveguides with parallel longitudinal axes; and a laterally unguided semiconductor diffraction region located between the first and second sets of waveguides, the diffraction region having a length approximately equal to an odd-numbered multiple of one half of the Talbot distance, given by the quantity (2n-1)(d 2 /λ), where n is a positive integer, d is the lateral periodic spacing of the waveguides in the first and second sets of waveguides, and λ is the wavelength of light, in the diffraction region, produced by the lasing action of the device; wherein the longitudinal axes of waveguides in the first set are approximately aligned with interelement regions of the waveguides in the second set, to favor the 0°-phase-shift array mode and to suppress the 180°-phase-shift array mode; wherein the first and second sets of waveguides are negative-index waveguides, each waveguide having an antiguide core defining a waveguide element, and a laterally surrounding cladding material forming interelement regions, the waveguides having a lateral antiguide elemental width of d 0 and an interelement spacing s; wherein the waveguides, considered separately, generate laterally traveling waves that have a wavelength λ 0 , equal to approximately 2d 0 , in the antiguide core and a wavelength λ 1 in the antiguide guide cladding material; and wherein the interelement spacing s is selected to be approximately equal to an odd number of half-wavelengths, or mλ 1 /2, where m is an odd integer, to produce a 0°-phase-shift-array-mode resonance condition in which there is strong coupling between all elements of the array and a high degree of device coherence.

Claim 27

A monolithic semiconductor laser array structure as defined in claim 20, wherein: the wavelength λ 1 of laterally traveling waves in the interelement regions is dependent on the difference Δn between the refractive index of the antiguide element and the refractive index of the interelement region; and the values of Δn and s are selected to provide an operating point close enough to the resonance condition to provide strong coupling between all elements of the array, but to provide in addition strong discrimination between the 0°-phase-shift mode and adjacent higher-order modes.