EP0178765A2
Expired / Lapsed
EP
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Phased linear laser array
Assignee: Nortel Networks Ltd
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Filing: 1985-08-29
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Granted: —
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Expires: 2005-08-29
Abstract
Abstract (57) A phase-locked linear laser array has an output array (10) in which equispaced optical gain elements are formed along a semiconductor bar and a control laser array (12) having equispaced laser elements in close coupling with the output array. The output array elements, having twice the spacing of the control array elements, are aligned with alternating elements of the control array. The tendency of the control array lasers to operate with 180° optical phase difference between adjacent lasers causes every other laser to be in-phase and thus adjacent elements of the output array (10) are also in-phase.
Inventors
- 👤 Richard Douglas Clayton
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 09:51
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/02; H01S5/026; H01S5/4081
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
121 words
A semiconductor laser phase-locked array having an output array of equispaced optical gain elements, the array characterized by a control laser array (12) having a plurality of equispaced diode lasers, the control array (12) being mounted in laser coupling relationship with the output array (10) with optical gain elements of the output array (10) aligned with alternating lasers of the control laser array (12), the spacing of optical gain elements of the output array (10) being twice the spacing of lasers of the control array (12) whereby the tendency of adjacent ones of the closely spaced lasers of the control array (12) to emit in anti-phase of each other ensures in-phase emission from the output array optical gain elements coupled thereto.
Claim 2
Dependent Claim
121 words
A semiconductor laser phase-locked array having an output array of equispaced optical gain elements, the array characterized by a control laser array (12) having a plurality of equispaced diode lasers, the control array (12) being mounted in laser coupling relationship with the output array (10) with optical gain elements of the output array (10) aligned with alternating lasers of the control laser array (12), the spacing of optical gain elements of the output array (10) being twice the spacing of lasers of the control array (12) whereby the tendency of adjacent ones of the closely spaced lasers of the control array (12) to emit in anti-phase of each other ensures in-phase emission from the output array optical gain elements coupled thereto.
Claim 3
Dependent Claim
35 words
A semiconductor laser phase-locked array as claimed in claim 1 further characterized in that the lasers of the control array (12) and the optical gain elements of the output array (10) both form linear arrays.
Claim 4
Dependent Claim
51 words
A semiconductor laser phase-locked array as claimed in claim 1 further characterized in that lasing cavities of the control array lasers have a center-to-center spacing of between 3 and 30 microns and the optical gain elements of the output array (10) have a center-to-center spacing of between 6 and 60 microns.
Claim 5
Dependent Claim
94 words
A semiconductor laser phase-locked array as claimed in any of claims 1 to 3 further characterized in that the output array (10) comprises a first double heterostructure (26, 28, 30) having a plurality of stripe contact (14) optical gain elements extending therealong, the optical gain elements having emitting facets at respective sides of the bar, the control laser array comprising a second double heterostructure bar having a plurality of stripe contact (16) lasers spaced along the length thereof, the lasers of the control array (12) having emitting facets at respective sides of the bar.
Claim 6
Dependent Claim
39 words
A semiconductor laser phase-locked array as claimed in any of claims 1 to 4 further characterized in that the two arrays are formed on a common substrate material (24), the substrate material being bonded to a heat sink (38).
Claim 7
Dependent Claim
24 words
A device as claimed in claim 4 further characterized in that at least one of the opposed facet surfaces has an anti-reflective coating thereon.
Claim 8
Dependent Claim
48 words
A semiconductor laser phase-locked array as claimed in any of claims 1 to 6 further characterized in that a common contact (23) in electrical contact with the stripes (16) of the control laser array extends the full length of the bar on which the control lasers are formed.
Claim 9
Dependent Claim
49 words
A semiconductor laser phase-locked array as claimed in any of claims 1 to 4, further characterized in that a common contact (21) extends the full length of a bar on which the output array optical gain elements are formed and contacts all of the p-side stripes of the lasers.
Claim 10
Dependent Claim
22 words
A semiconductor laser phase-locked array as claimed in any of claims 1 to 8, in which the optical gain elements are lasers.
References Cited (Backward Citations)
No citation records indexed.
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