Patent US4985374A successfully refreshed from Google Patents.
US4985374A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Making a semiconductor device with ammonia treatment of photoresist
Assignee: Toshiba Corp
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Filing: 1990-06-27
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Granted: 1991-01-15
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Expires: 2010-06-27
Abstract
Abstract A manufacturing method of a semiconductor device of the present invention comprises a first step of exposing a periphery of a first region of a photoresist layer coating an insulating layer formed on a semiconductor substrate and a periphery of a second region for positioning, and a second step of heating said photoresist layer in ammonia atmosphere and forming an alkali insoluble portion in the periphery of the first region and that of the second region, a third step of exposing a third region, which is smaller than the first region, and the second region and developing these regions, a fourth step of etching the third region and the second region to a predetermined depth, and a fifth step of repeating the third and fourth steps once or more in a region, which is smaller than the third region, and the second region.
Inventors
- 👤 Hitoshi Tsuji
- 👤 Hiroshi Haraguchi
- 👤 Osamu Hirata
- 👤 Hidetsuna Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:27
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/26; G03F7/38; H10P95/00; H10P95/08; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; H10W20/084; H10W20/088; Y; Y10; Y10S; Y10S148/00; Y10S148/137; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
137 words
A manufacturing method of semiconductor device comprising: a first step of exposing a periphery of a first region of a photoresist layer coating an insulating layer formed on a semiconductor substrate and a periphery of a second region for positioning; a second step of heating said photoresist layer in ammonia atmosphere and forming an alkali insoluble portion in a periphery of said first region and that of said second region; a third step of exposing a third region, which is smaller than said first region, and said second region and developing these regions; a fourth step of etching said third region and said second region to a predetermined depth; and a fifth step of repeating said third and fourth steps once or more in a region, which is smaller than said third region, and said second region.
Claim 2
Dependent Claim
137 words
A manufacturing method of semiconductor device comprising: a first step of exposing a periphery of a first region of a photoresist layer coating an insulating layer formed on a semiconductor substrate and a periphery of a second region for positioning; a second step of heating said photoresist layer in ammonia atmosphere and forming an alkali insoluble portion in a periphery of said first region and that of said second region; a third step of exposing a third region, which is smaller than said first region, and said second region and developing these regions; a fourth step of etching said third region and said second region to a predetermined depth; and a fifth step of repeating said third and fourth steps once or more in a region, which is smaller than said third region, and said second region.
Claim 3
Dependent Claim
16 words
A manufacturing method according to claim 1, wherein said fourth step includes a dry etching process.
Claim 4
Dependent Claim
21 words
A manufacturing method according to claim 1, further comprising a sixth step of removing said photoresist layer after said fifth step.
Claim 5
Dependent Claim
15 words
A manufacturing method according to claim 1, wherein said photoresist layer includes a novolak posiresist.
Claim 6
Dependent Claim
14 words
A manufacturing method according to claim 1, wherein said insulating layer includes silicon oxide.
Claim 7
Dependent Claim
14 words
A manufacturing method according to claim 1, wherein said insulating layer includes silicon nitride.
Claim 8
Dependent Claim
12 words
A manufacturing method according to claim 1, wherein said developer uses choline.
Claim 9
Dependent Claim
16 words
A manufacturing method according to claim 1, wherein said ammonia atmosphere is 90° to 100° C.
Claim 10
Dependent Claim
101 words
A manufacturing method of semiconductor device comprising: a first step cf exposing a periphery of a first region of a photoresist layer coating an insulating layer formed on a semiconductor substrate and said periphery of a second region for positioning; a second step of heating said photoresist layer in ammonia atmosphere, and forming alkali insoluble portion in the periphery of said the first region and that of the second region; a third step of performing an isotropic etching of said first region to a predetermined depth; and a fourth step of performing an anisotropic etching of said first and second regions.
Claim 11
Dependent Claim
101 words
A manufacturing method of semiconductor device comprising: a first step cf exposing a periphery of a first region of a photoresist layer coating an insulating layer formed on a semiconductor substrate and said periphery of a second region for positioning; a second step of heating said photoresist layer in ammonia atmosphere, and forming alkali insoluble portion in the periphery of said the first region and that of the second region; a third step of performing an isotropic etching of said first region to a predetermined depth; and a fourth step of performing an anisotropic etching of said first and second regions.
Claim 12
Dependent Claim
15 words
A manufacturing method according to claim 9, wherein said isotropic etching is a dry etching.
Claim 13
Dependent Claim
20 words
A manufacturing method according to claim 9, further comprising a fifth step of removing said photoresist after said fourth step.
Claim 14
Dependent Claim
15 words
A manufacturing method according to claim 9, wherein said photoresist layer is a novolak posiresist.
Claim 15
Dependent Claim
14 words
A manufacturing method according to claim 9, wherein said insulating layer includes silicon oxide.
Claim 16
Dependent Claim
14 words
A manufacturing method according to claim 9, wherein said insulating layer includes silicon nitride.
Claim 17
Dependent Claim
12 words
A manufacturing method according to claim 9, wherein said developer uses choline.
Claim 18
Dependent Claim
16 words
A manufacturing method according to claim 9, wherein said ammonia atmosphere is 90° to 100° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-14 | 1994-07-16 | 1995-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-14 | 1998-07-16 | 1999-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-14 | 2002-07-16 | 2003-01-15 | $7700.00 | Window Closed / Lapsed |