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Information storage medium

Assignee: Toshiba Corp
•
Filing: 1989-12-22
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Granted: 1991-01-15
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Expires: 2009-12-22
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Abstract

Abstract An information storage medium comprises a substrate and a recording layer formed on the substrate containing Te, Ge, C and H. The recording layer is formed by sputtering, with a Ge-Te alloy being used as a target and with a mixed gas of a noble gas and a hydrocarbon being used as a sputtering gas. The hydrocarbon content in the sputtering gas falls within a range of 3 to 35%. The composition of the target is Ge x Te 100-x (where x is expressed by atomic %, and 5≦x≦20).

Inventors

  • 👤 Kideki Ohkawa
  • 👤 Norio Ozawa
  • 👤 Motonari Matsubara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 02:13
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/241; G11B7/242; G11B7/243; G11B2007/24302; G11B2007/24312; G11B2007/24316; G11B2007/24318; G11B2007/24328; G11B7/2437; G11B7/252; G11B7/253; G11B7/2531; G11B7/2533; G11B7/2534; Y; Y10; Y10S; Y10S430/00; Y10S430/146

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 96 words
An information storage medium comprising: a substrate; and a phase-transformation type recording layer formed on the substrate, the recording layer containing Te, Ge, C and H, wherein the recording layer is formed by a sputtering process with a Ge-Te alloy used as a target and with a mixed gas of a rare gas and a hydrocarbon gas used as a sputtering gas, the composition of the target being Ge x Te 100-x (where x is expressed by atomic %, and 5≦x≦20), the hydrocarbon content in the sputtering gas falling within a range of 5 to 35%.
Claim 2
Dependent Claim 96 words
An information storage medium comprising: a substrate; and a phase-transformation type recording layer formed on the substrate, the recording layer containing Te, Ge, C and H, wherein the recording layer is formed by a sputtering process with a Ge-Te alloy used as a target and with a mixed gas of a rare gas and a hydrocarbon gas used as a sputtering gas, the composition of the target being Ge x Te 100-x (where x is expressed by atomic %, and 5≦x≦20), the hydrocarbon content in the sputtering gas falling within a range of 5 to 35%.
Claim 3
Dependent Claim 20 words
The information storage medium according to claim 1, wherein the recording layer has a thickness of 5000 Å or less.
Claim 4
Dependent Claim 20 words
The information storage medium according to claim 2, wherein said recording layer has a thickness of 300 to 1000 Å.
Claim 5
Dependent Claim 20 words
The information storage medium according to claim 1, wherein an outer dielectric protection layer is provided on the recording layer.
Claim 6
Dependent Claim 19 words
The information storage medium according to claim 1, wherein an organic protection layer is provided on the recording layer.
Claim 7
Dependent Claim 23 words
The information storage medium according to claim 1, wherein an inner dielectric protection layer is interposed between the substrate and the recording layer.
Claim 8
Dependent Claim 23 words
The information storage medium according to claim 4, wherein an inner dielectric protection layer is interposed between the substrate and the recording layer.
Claim 9
Dependent Claim 21 words
The information storage medium according to claim 7, wherein an organic protection layer is provided on the outer dielectric protection layer.
Claim 10
Independent Claim 86 words
A method of manufacturing an information storage medium comprising the steps of: introducing a substrate and a target of Ge x Te 100-x (where x is expressed by atomic % and falls within a range of 5≦x≦20) into a vessel, introducing a mixture of hydrocarbon gas and rare gas into the vessel, the content of the hydrocarbon gas falling within a range of 5 to 35%, and sputtering the target to form a phase-transformation type recording layer containing Te, Ge, C and H on the substrate.
Claim 11
Independent Claim 86 words
A method of manufacturing an information storage medium comprising the steps of: introducing a substrate and a target of Ge x Te 100-x (where x is expressed by atomic % and falls within a range of 5≦x≦20) into a vessel, introducing a mixture of hydrocarbon gas and rare gas into the vessel, the content of the hydrocarbon gas falling within a range of 5 to 35%, and sputtering the target to form a phase-transformation type recording layer containing Te, Ge, C and H on the substrate.
Claim 12
Dependent Claim 24 words
A medium according to claim 1, wherein the content of C+H of the recording layer falls within a range of 5 at% ≦C+H≦25 at%.

References Cited (Backward Citations)

US4373004A Cited
US4461807A Cited
US4434429A Cited
US4433340A Cited
US4499178A Cited
US4565772A Cited
JPS6034897A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-01-14 1994-07-16 1995-01-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-01-14 1998-07-16 1999-01-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-01-14 2002-07-16 2003-01-15 $7700.00 Window Closed / Lapsed

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