Patent US4985310A successfully refreshed from Google Patents.
US4985310A
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Multilayered metallurgical structure for an electronic component
Assignee: International Business Machines Corp
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Filing: 1989-09-05
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Granted: 1991-01-15
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Expires: 2009-09-05
Abstract
Abstract Disclosed is a multilayered metallurgical structure for an electronic component. The structure includes a base metallurgy which includes one or more layers of chromium, titanium, zirconium, hafnium, niobium, molybdenum, tantalum, cooper and/or aluminum. Directly on the base metallurgy is a layer of cobalt. The structure may also include a layer of noble or relatively noble metal such as gold, platinum, palladium and/or tin directly on the cobalt.
Inventors
- 👤 Birendra N. Agarwala
- 👤 Keith F. Beckman
- 👤 Alice H. Cooper-Joselow
- 👤 Chandrasekhar Narayan
- 👤 Sampath Purushothaman
- 👤 Sudipta K. Ray
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:10
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/22; H05K3/24; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W70/00; H10W70/60; H10W70/62; H10W70/66; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12736; Y10T428/12743; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12847; Y10T428/12854; Y10T428/12861; Y10T428/12889; Y10T428/12903; Y10T428/1291
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
69 words
A multilayered metallurgical structure for an electronic component comprising: (a) a base metallurgy comprising a first layer selected from the group consisting of chromium, titanium, tantalum, zirconium, hafnium, molybdenum and mixtures thereof and then a conductive layer selected from the group consisting of copper, aluminum and mixtures thereof directly on said first layer; and (b) a layer of cobalt directly on said conductive layer of said base metallurgy layer.
Claim 2
Dependent Claim
69 words
A multilayered metallurgical structure for an electronic component comprising: (a) a base metallurgy comprising a first layer selected from the group consisting of chromium, titanium, tantalum, zirconium, hafnium, molybdenum and mixtures thereof and then a conductive layer selected from the group consisting of copper, aluminum and mixtures thereof directly on said first layer; and (b) a layer of cobalt directly on said conductive layer of said base metallurgy layer.
Claim 3
Dependent Claim
29 words
The structure of claim 1 wherein said first layer of said base metallurgy layer is chromium or titanium and said conductive layer of said base metallurgy layer is copper.
Claim 4
Dependent Claim
18 words
The structure of claim 1 further comprising a quantity of solder in contact with said layer of cobalt.
Claim 5
Dependent Claim
20 words
The structure of claim 1 further comprising a silicon device wherein said base metallurgy layer is on said silicon device.
Claim 6
Dependent Claim
19 words
The structure of claim 1 further comprising a ceramic substrate wherein said base metallurgy layer is on said substrate.
Claim 7
Dependent Claim
59 words
A multilayered metallurgical structure for an electronic component comprising: (a) a base metallurgy layer comprising a layer selected from the group consisting of titanium and chromium and then a layer of copper; (b) a layer of cobalt directly on said layer of copper; and (c) a layer of noble or relatively noble metal directly on said layer of cobalt.
Claim 8
Dependent Claim
59 words
A multilayered metallurgical structure for an electronic component comprising: (a) a base metallurgy layer comprising a layer selected from the group consisting of titanium and chromium and then a layer of copper; (b) a layer of cobalt directly on said layer of copper; and (c) a layer of noble or relatively noble metal directly on said layer of cobalt.
Claim 9
Dependent Claim
26 words
The structure of claim 6 wherein said noble or relatively noble metal is selected from the group consisting of gold, platinum, palladium, tin and mixtures thereof.
Claim 10
Dependent Claim
14 words
The structure of claim 7 wherein said noble or relatively noble metal is gold.
Claim 11
Dependent Claim
20 words
The structure of claim 6 further comprising a silicon device wherein said base metallurgy layer is on said silicon device.
Claim 12
Dependent Claim
19 words
The structure of claim 6 further comprising a ceramic substrate wherein said base metallurgy layer is on said substrate.
Claim 13
Dependent Claim
76 words
A solder-contacted multilayered metallurgical structure for an electronic component comprising: (a) a base metallurgy layer comprising a layer selected from the group consisting of titanium and chromium and then a layer of copper; (b) a layer of cobalt directly on said layer of copper; and (c) a layer of noble or relatively noble metal directly on said layer of cobalt; (d) a quantity of solder in contact with said layer of noble or relatively noble metal.
Claim 14
Dependent Claim
76 words
A solder-contacted multilayered metallurgical structure for an electronic component comprising: (a) a base metallurgy layer comprising a layer selected from the group consisting of titanium and chromium and then a layer of copper; (b) a layer of cobalt directly on said layer of copper; and (c) a layer of noble or relatively noble metal directly on said layer of cobalt; (d) a quantity of solder in contact with said layer of noble or relatively noble metal.
Claim 15
Dependent Claim
26 words
The structure of claim 11 wherein said noble or relatively noble metal is selected from the group consisting of gold, platinum, palladium, tin, and mixtures thereof.
Claim 16
Dependent Claim
14 words
The structure of claim 12 wherein said noble or relatively noble metal is gold.
Claim 17
Dependent Claim
18 words
The structure of claim 11 further comprising silicon device wherein said base metallurgy is on said silicon device.
Claim 18
Dependent Claim
18 words
The structure of claim 11 further comprising a ceramic substrate wherein said base metallurgy is on said substrate.
Claim 19
Dependent Claim
30 words
The structure of claim 11 wherein said layer of noble or relatively noble metal, upon contact with said quantity of solder, becomes absorbed within the solder and thus is fugitive.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-14 | 1994-07-16 | 1995-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-14 | 1998-07-16 | 1999-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-14 | 2002-07-16 | 2003-01-15 | $7700.00 | Window Closed / Lapsed |