Patent US1468285A successfully refreshed from Google Patents.
Patent US4984060A successfully refreshed from Google Patents.
US4984060A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device wirings with hillocks
Assignee: Foundation for Advancement of International Science
•
Filing: 1988-09-24
•
Granted: 1991-01-08
•
Expires: 2008-09-24
Abstract
Abstract A semiconductor device comprises metal wirings with its minimum line width of 1 μm or less and on the surface of said metal wiring there is no hillock which has its height equal to or more than 1/4 of the minimum line width of said metal wiring. The main portion of said metal wiring is formed with pure metal, and is supplied in connection portion between the metal wiring and a semiconductor substrate with a barrier layer for preventing any atoms involved in said metal parts from diffusing into the semiconductor substrate.
Inventors
- 👤 Tadahiro Ohmi
- 👤 Tadashi Shibata
- 👤 Masaru Umeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/435
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
70 words
A semiconductor device comprising metal wirings, said metal wirings including hillocks on the surfaces thereof, said metal wirings having minimum line widths of 1 μm or less and an interlayer insulating film disposed over said metal wirings, wherein the relationship between the minimum line width W of said metal wirings, the thickness T of said interlayer insulating film, and the height H of said hillocks is expressed by: H/T≦1/2 H/W≦1/4.
Claim 2
Dependent Claim
70 words
A semiconductor device comprising metal wirings, said metal wirings including hillocks on the surfaces thereof, said metal wirings having minimum line widths of 1 μm or less and an interlayer insulating film disposed over said metal wirings, wherein the relationship between the minimum line width W of said metal wirings, the thickness T of said interlayer insulating film, and the height H of said hillocks is expressed by: H/T≦1/2 H/W≦1/4.
Claim 3
Dependent Claim
17 words
A semiconductor device according to claim 1 wherein said metal wirings are substantially composed of pure metal.
References Cited (Backward Citations)
JPS58125848A
Cited
US4531144A
Cited
JPS59131A
Cited
US4734754A
Cited
US4792842A
Cited
US4674176A
Cited
JPS62160739A
Cited
JPS62160740A
Cited
US4884120A
Cited
US4887146A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |