US4983570A
Expired / Lapsed
US
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Method for forming a thin layer of superconducting material on a substrate and article produced thereby
Assignee: Thales SA
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Filing: 1988-06-30
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Granted: 1991-01-08
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Expires: 2008-06-30
Abstract
Abstract The invention provides a method of forming thin layers of superconducting materials and a superconducting device. In accordance with the invention, such layers are formed by the epitaxial growth, on a substrate, of the different constituent elements by regulating the admission of the different constituents so as to obtain a superconducting layer whose mesh parameter substantially matches that of the substrate. Epitaxying may also be carried out directly from a superconducting material.
Inventors
- 👤 Gerard Creuzet
- 👤 Alain Friederich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:35
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H10N60/0716; C; C30; C30B; C30B1/00; C30B1/02; C30B1/026; C30B29/00; C30B29/10; C30B29/16; C30B29/22; H10N60/0296; H10N60/0576; H10N60/0604; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/729; Y10S505/73; Y10S505/732
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
83 words
A method for forming a thin film layer of superconducting materials on a substrate, comprising epitaxially growing metal oxides and rare earth oxides or raw unoxidized elements on a substrate such that a layer is obtained whose material has a lattic parameter corresponding substantially to a multiple or a sub-multiple of the lattice parameter of the substrate, oxidizing the epitaxially grown layer and covering the oxidized epitaxially grown layer with an oxygen impermeable material, said layer having superconductivity at a high critical temperature.
Claim 2
Independent Claim
83 words
A method for forming a thin film layer of superconducting materials on a substrate, comprising epitaxially growing metal oxides and rare earth oxides or raw unoxidized elements on a substrate such that a layer is obtained whose material has a lattic parameter corresponding substantially to a multiple or a sub-multiple of the lattice parameter of the substrate, oxidizing the epitaxially grown layer and covering the oxidized epitaxially grown layer with an oxygen impermeable material, said layer having superconductivity at a high critical temperature.
Claim 3
Dependent Claim
43 words
The method for forming a thin film layer of superconducting materials on a substrate as claimed in claim 1, comprising: providing a solid superconducting material in the amorphous or partially crystalline state; and solid phase epitaxially growing said solid material on said substrate.
Claim 4
Dependent Claim
18 words
The method as claimed in claim 1, wherein the epitaxial growth is carried out in an oxygen flow.
Claim 5
Dependent Claim
21 words
The method as claimed in claim 1, wherein the epitaxial growth is followed by an annealing step in an oxygen atmosphere.
Claim 6
Dependent Claim
20 words
The method as claimed in claim 1, wherein the epitaxial growth is followed by an annealing step in oxygen plasma.
Claim 7
Dependent Claim
26 words
The method as claimed in claim 1, wherein the epitaxial growth step is preceded by a step for forming on the substrate a lattice matching super-lattice.
Claim 8
Independent Claim
45 words
A method for forming a thin film layer of superconducting material on a substrate, comprising epitaxially growing metal oxides and rare earth oxides or raw unoxidized elements on a substrate, oxidizing the epitaxially grown layer, and depositing an oxygen impermeable material on the oxidized layer.
Claim 9
Independent Claim
45 words
A method for forming a thin film layer of superconducting material on a substrate, comprising epitaxially growing metal oxides and rare earth oxides or raw unoxidized elements on a substrate, oxidizing the epitaxially grown layer, and depositing an oxygen impermeable material on the oxidized layer.
Claim 10
Dependent Claim
43 words
The method for forming a thin film layer of superconducting materials on a substrate as claimed in claim 7, comprising: providing a solid superconducting material in the amorphous or partially crystalline state; and solid phase epitaxially growing said solid material on said substrate.
Claim 11
Dependent Claim
16 words
The method of claim 7, wherein the epitaxial growth is carried out in an oxygen flow.
Claim 12
Dependent Claim
19 words
The method of claim 7, wherein the epitaxial growth is followed by an annealing step in an oxygen atmosphere.
Claim 13
Dependent Claim
20 words
The method of claim 7, wherein the epitaxial growth epitaxial growth is followed by an annealing step in oxygen plasma.
References Cited (Backward Citations)
JPS6428875A
Cited
US4916114A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |