Patent US4983547A successfully refreshed from Google Patents.
US4983547A
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Method of forming a silicide film
Assignee: Mitsubishi Electric Corp
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Filing: 1988-10-20
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Granted: 1991-01-08
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Expires: 2008-10-20
Abstract
Abstract In a method of forming a metallic silicide film on a substrate, a metallic silicide film containing silicon at a concentration higher than stoichiometric, is deposited on a substrate. A film of aluminum or aluminum alloy is then deposited on the metallic silicide film. Subsequently, a heat treatment is conducted to cause precipitation of silicon from the metallic silicide film to the aluminum, thereby to lower the silicon concentration in the silicide film.
Inventors
- 👤 Junichi Arima
- 👤 Yoshihiro Hirata
- 👤 Hiroshi Harada
- 👤 Isao Furuta
- 👤 Shigeru Harada
- 👤 Reiji Tamaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:58
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
126 words
A method of forming and controlling the composition ratio of a metallic silicide film on a substrate, the method comprising the steps of: (a) sputtering MoSi x with 2≦x≦3 onto the substrate to form a MoSi x layer at a concentration higher than stoichiometric; (b) depositing a film of either aluminum or aluminum alloy at selected areas on said MoSi x layer where a more nearly stoichiometric composition is desired; (c) conducting a heat treatment at a temperature between about 350° and about 550° C. to cause precipitation of Si from said MoSi x layer to said film at said selected areas; and (d) stripping said film having precipitated Si thereby leaving said MoSi x layer with said selected areas having said more nearly stoichiometric composition.
Claim 2
Independent Claim
126 words
A method of forming and controlling the composition ratio of a metallic silicide film on a substrate, the method comprising the steps of: (a) sputtering MoSi x with 2≦x≦3 onto the substrate to form a MoSi x layer at a concentration higher than stoichiometric; (b) depositing a film of either aluminum or aluminum alloy at selected areas on said MoSi x layer where a more nearly stoichiometric composition is desired; (c) conducting a heat treatment at a temperature between about 350° and about 550° C. to cause precipitation of Si from said MoSi x layer to said film at said selected areas; and (d) stripping said film having precipitated Si thereby leaving said MoSi x layer with said selected areas having said more nearly stoichiometric composition.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein said heat treatment is conducted in either a hydrogen atmosphere or in a nitrogen atmosphere.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein said substrate comprises a Si wafer.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein said substrate comprises any semiconductor.
Claim 6
Dependent Claim
12 words
The method of claim 1, wherein said substrate comprises a metallic product.
Claim 7
Dependent Claim
23 words
The method of claim 1, wherein said MoSi x layer is predominantly deposited over an insulating layer at the surface of said substrate.
Claim 8
Dependent Claim
19 words
The method of claim 1, wherein said film is deposited to a thickness of greater than about 0.5 microns.
Claim 9
Independent Claim
126 words
A method of forming and controlling the composition ratio of a metallic silicide film on a substrate, the method comprising the steps of: (a) sputtering WSi x with 2≦x≦3 onto the substrate to form a WSi x layer at a concentration higher than stoichiometric; (b) depositing a film of either aluminum or aluminum alloy at selected areas on said WSi x layer where a more nearly stoichiometric composition is desired; (c) conducting a heat treatment at a temperature between about 350° and about 550° C. to cause precipitation of Si from said WSi x layer to said film at said selected areas; and (d) stripping said film having precipitated Si thereby leaving said WSi x layer with said selected areas having said more nearly stoichiometric composition.
Claim 10
Independent Claim
126 words
A method of forming and controlling the composition ratio of a metallic silicide film on a substrate, the method comprising the steps of: (a) sputtering WSi x with 2≦x≦3 onto the substrate to form a WSi x layer at a concentration higher than stoichiometric; (b) depositing a film of either aluminum or aluminum alloy at selected areas on said WSi x layer where a more nearly stoichiometric composition is desired; (c) conducting a heat treatment at a temperature between about 350° and about 550° C. to cause precipitation of Si from said WSi x layer to said film at said selected areas; and (d) stripping said film having precipitated Si thereby leaving said WSi x layer with said selected areas having said more nearly stoichiometric composition.
Claim 11
Dependent Claim
21 words
The method of claim 8, wherein said heat treatment is conducted in either a hydrogen atmosphere or in a nitrogen atmosphere.
Claim 12
Dependent Claim
12 words
The method of claim 8, wherein said substrate comprises a Si wafer.
Claim 13
Dependent Claim
11 words
The method of claim 8, wherein said substrate comprises any semiconductor.
Claim 14
Dependent Claim
12 words
The method of claim 8, wherein said substrate comprises a metallic product.
Claim 15
Dependent Claim
23 words
The method of claim 8, wherein said WSi x layer is predominantly deposited over an insulating layer at the surface of said substrate.
Claim 16
Dependent Claim
19 words
The method of claim 8, wherein said film is deposited to a thickness of greater than about 0.5 microns.
Claim 17
Independent Claim
126 words
A method of forming and controlling the composition ratio of a metallic silicide film on a substrate, the method comprising the steps of: (a) sputtering TaSi x with 2≦x≦3 onto the substrate to form a TaSi x layer at a concentration higher than stoichiometric; (b) depositing a film of either aluminum or aluminum alloy at selected areas on said TaSi x layer where a more nearly stoichiometric composition is desired; (c) conducting a heat treatment at a temperature between about 350° and about 550° C. to cause precipitation of Si from said Tasi x layer to said film at said selected areas; and (d) stripping said film having precipitated Si thereby leaving said WSi x layer with said selected areas having said more nearly stoichiometric composition.
Claim 18
Independent Claim
126 words
A method of forming and controlling the composition ratio of a metallic silicide film on a substrate, the method comprising the steps of: (a) sputtering TaSi x with 2≦x≦3 onto the substrate to form a TaSi x layer at a concentration higher than stoichiometric; (b) depositing a film of either aluminum or aluminum alloy at selected areas on said TaSi x layer where a more nearly stoichiometric composition is desired; (c) conducting a heat treatment at a temperature between about 350° and about 550° C. to cause precipitation of Si from said Tasi x layer to said film at said selected areas; and (d) stripping said film having precipitated Si thereby leaving said WSi x layer with said selected areas having said more nearly stoichiometric composition.
Claim 19
Dependent Claim
21 words
The method of claim 15, wherein said heat treatment is conducted in either a hydrogen atmosphere or in a nitrogen atmosphere.
Claim 20
Dependent Claim
12 words
The method of claim 15, wherein said substrate comprises a Si wafer.
Claim 21
Dependent Claim
11 words
The method of claim 15, wherein said substrate comprises any semiconductor.
Claim 22
Dependent Claim
12 words
The method of claim 15, wherein said substrate comprises a metallic product.
Claim 23
Dependent Claim
23 words
The method of claim 15, wherein said TaSi x layer is predominantly deposited over an insulating layer at the surface of said substrate.
Claim 24
Dependent Claim
19 words
The method of claim 15, wherein said film is deposited to a thickness of greater than about 0.5 microns.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |