US4983545A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planarization of dielectric films on integrated circuits
Assignee: NEC Corp
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Filing: 1988-03-18
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Granted: 1991-01-08
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Expires: 2008-03-18
Abstract
Abstract A method for the geometry independent planarization of dielectric films on integrated circuits is disclosed. The method comprises forming the dielectric film, forming a polymer layer which polymer has the viscosity of 5,000 cps or less at 200° C., reducing the viscosity of the polymer under baking to create a planar surface, hardening the polymer by the radiation or the electric beam and etching said polymer layer to transfer the planar surface to said dielectric film.
Inventors
- 👤 Hiroshi Gokan
- 👤 Masahito Mukainaru
- 👤 Masayoshi Suzuki
- 👤 Hisanao Tsuge
- 👤 Hidehiko Matsuya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10P95/08; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
203 words
A method for producing a semiconductor structure over a substrate having a pattern thereon, said pattern comprising mesa-like portions having a trench region therebetween, the steps comprising: (a) forming a dielectric film over the mesa-like portions and the trench region; (b) forming a polymer layer over said dielectric film, said polymer layer comprising a polymer having a melting viscosity of 5000 cps or less at 200° C. and the formula: ##STR4## in which: R 1 is a hydrogen atom, a methyl radical or a halogen atom; R 2 is a hydrogen atom, a methyl radical or a halogen atom; R is a hydrogen atom or a methyl radical; X is a halogen atom; Ar is a phenyl radical; Ar' is a phenylene radical; m and n are zero or a positive integer, each of which can not be zero at the same time, wherein the ratio of n/m is not less than 5/95; (c) reducing the viscosity of said polymer layer under baking to create a substantially planar surface; (d) hardening the polymer with radiation or an electron beam to improve the heat resistance of said polymer layer; and (e) dry-etching said polymer layer to transfer the planar surface to said dielectric film.
Claim 2
Independent Claim
203 words
A method for producing a semiconductor structure over a substrate having a pattern thereon, said pattern comprising mesa-like portions having a trench region therebetween, the steps comprising: (a) forming a dielectric film over the mesa-like portions and the trench region; (b) forming a polymer layer over said dielectric film, said polymer layer comprising a polymer having a melting viscosity of 5000 cps or less at 200° C. and the formula: ##STR4## in which: R 1 is a hydrogen atom, a methyl radical or a halogen atom; R 2 is a hydrogen atom, a methyl radical or a halogen atom; R is a hydrogen atom or a methyl radical; X is a halogen atom; Ar is a phenyl radical; Ar' is a phenylene radical; m and n are zero or a positive integer, each of which can not be zero at the same time, wherein the ratio of n/m is not less than 5/95; (c) reducing the viscosity of said polymer layer under baking to create a substantially planar surface; (d) hardening the polymer with radiation or an electron beam to improve the heat resistance of said polymer layer; and (e) dry-etching said polymer layer to transfer the planar surface to said dielectric film.
Claim 3
Dependent Claim
28 words
A method as described in claim 1, wherein the polymer has a weight-average molecular weight of from 500 to 1500 and a molecular weight distribution smaller than 1.5.
Claim 4
Dependent Claim
17 words
A method as described in claim 1 wherein the ratio of m:n is from 95:5 to 10:90.
Claim 5
Dependent Claim
17 words
A method as described in claim 2 wherein the ratio of m:n is from 95:5 to 10:90.
Claim 6
Independent Claim
213 words
A method for producing a semiconductor structure over a substrate having a pattern thereon, said pattern comprising mesa-like portions having a trench region therebetween, the steps comprising: (a) forming a dielectric film over the mesa-like portions and trench region; (b) forming an organic film containing at least one amino radical and at least one alkoxysilyl radical over said dielectric film; (c) forming a polymer layer over said organic film, said polymer layer comprising a polymer having the melting viscosity of 5000 cps or less at 200° C. and the formula: ##STR5## in which: R 1 is a hydrogen atom, a methyl radical or a halogen atom; R 2 is a hydrogen atom, a methyl radical or a halogen atom; R is a hydrogen atom or a methyl radical; X is a halogen atom; Ar is a phenyl radical; Ar' is a phenylene radical; m and n are zero or a positive integer, each of which can not be zero at the same time; (d) reducing the viscosity of said polymer layer under baking to create a substantially planar surface; (e) hardening the polymer with radiation or an electron beam to improve the heat resistance of said polymer layer; and (f) dry-etching said polymer layer to transfer the planar surface to said dielectric film.
Claim 7
Independent Claim
213 words
A method for producing a semiconductor structure over a substrate having a pattern thereon, said pattern comprising mesa-like portions having a trench region therebetween, the steps comprising: (a) forming a dielectric film over the mesa-like portions and trench region; (b) forming an organic film containing at least one amino radical and at least one alkoxysilyl radical over said dielectric film; (c) forming a polymer layer over said organic film, said polymer layer comprising a polymer having the melting viscosity of 5000 cps or less at 200° C. and the formula: ##STR5## in which: R 1 is a hydrogen atom, a methyl radical or a halogen atom; R 2 is a hydrogen atom, a methyl radical or a halogen atom; R is a hydrogen atom or a methyl radical; X is a halogen atom; Ar is a phenyl radical; Ar' is a phenylene radical; m and n are zero or a positive integer, each of which can not be zero at the same time; (d) reducing the viscosity of said polymer layer under baking to create a substantially planar surface; (e) hardening the polymer with radiation or an electron beam to improve the heat resistance of said polymer layer; and (f) dry-etching said polymer layer to transfer the planar surface to said dielectric film.
Claim 8
Dependent Claim
53 words
A method as described in claim 5, wherein the organic film is produced from the compound having the formula; ##STR6## in which: R 3 is a p-phenylene, a trimethylene, an butylene or a dimethyleneaminotrimethylene radical; R 4 is a methyl or an ethyl radical; p is an integral number from zero to 2.
Claim 9
Dependent Claim
28 words
A method as described in claim 6, wherein the polymer has a weight-average molecular weight of from 500 to 1500 and a molecular weight distribution smaller than 1.5.
Claim 10
Dependent Claim
17 words
A method as described in claim 6 wherein the ratio of m:n is from 95:5 to 10:90.
Claim 11
Dependent Claim
17 words
A method as described in claim 7 wherein the ratio of m:n is from 95:5 to 10:90.
Claim 12
Independent Claim
213 words
A method for producing a semiconductor structure over a substrate having a pattern thereon, said pattern comprising mesa-like portions having a trench region therebetween, the steps comprising: (a) forming a dielectric film over the mesa-like portions and the trench region; (b) forming a polymer layer over said dielectric film, said polymer layer comprising a polymer having a melting viscosity of 5000 cps or less at 200° C. and the formula: ##STR7## in which: R 1 is a hydrogen atom, a methyl radical or a halogen atom; R 2 is a hydrogen atom, a methyl radical or a halogen atom; R is a hydrogen atom or a methyl radical; X is a halogen atom; Ar is a phenyl radical; Ar' is a phenylene radical; m and n are zero or a positive integer, each of which can not be zero at the same time, and a polysiloxane, wherein said polymer layer contains said polysiloxane in an amount of from 0.001% to 40% by weight; (c) reducing the viscosity of said polymer layer under baking to create a substantially planar surface; (d) hardening the polymer with radiation or an electron beam to improve the heat resistance of said polymer layer; and (e) dry-etching said polymer layer to transfer the planar surface to said dielectric film.
Claim 13
Independent Claim
213 words
A method for producing a semiconductor structure over a substrate having a pattern thereon, said pattern comprising mesa-like portions having a trench region therebetween, the steps comprising: (a) forming a dielectric film over the mesa-like portions and the trench region; (b) forming a polymer layer over said dielectric film, said polymer layer comprising a polymer having a melting viscosity of 5000 cps or less at 200° C. and the formula: ##STR7## in which: R 1 is a hydrogen atom, a methyl radical or a halogen atom; R 2 is a hydrogen atom, a methyl radical or a halogen atom; R is a hydrogen atom or a methyl radical; X is a halogen atom; Ar is a phenyl radical; Ar' is a phenylene radical; m and n are zero or a positive integer, each of which can not be zero at the same time, and a polysiloxane, wherein said polymer layer contains said polysiloxane in an amount of from 0.001% to 40% by weight; (c) reducing the viscosity of said polymer layer under baking to create a substantially planar surface; (d) hardening the polymer with radiation or an electron beam to improve the heat resistance of said polymer layer; and (e) dry-etching said polymer layer to transfer the planar surface to said dielectric film.
Claim 14
Dependent Claim
17 words
A method as described in claim 10, wherein the ratio of n/m is not less than 5/95.
Claim 15
Dependent Claim
29 words
A method as described in claim 10, wherein the polymer has a weight average molecular weight of from 500 to 1500 and a molecular weight distribution smaller than 1.5.
Claim 16
Dependent Claim
17 words
A method as described in claim 11, wherein the ratio of m:n is from 95:5 to 10:90.
Claim 17
Dependent Claim
17 words
A method as described in claim 12, wherein the ratio of m:n is from 95:5 to 10:90.
Claim 18
Dependent Claim
102 words
A composition suitable for planarization of dielectric films, which comprises a polymer and a polysiloxane, said polymer having the melting viscosity of 5000 cps or less at 200° C. and the formula: ##STR8## in which: R 1 is a hydrogen atom, a methyl radical or a halogen atom; R 2 is a hydrogen atom, a methyl radical or a halogen atom; R is a hydrogen atom or a methyl radical; X is a halogen atom; Ar is a phenyl radical; Ar' is a phenylene radical; m and n are zero or a positive integral number and aren't zero at the same time;
Claim 19
Dependent Claim
102 words
A composition suitable for planarization of dielectric films, which comprises a polymer and a polysiloxane, said polymer having the melting viscosity of 5000 cps or less at 200° C. and the formula: ##STR8## in which: R 1 is a hydrogen atom, a methyl radical or a halogen atom; R 2 is a hydrogen atom, a methyl radical or a halogen atom; R is a hydrogen atom or a methyl radical; X is a halogen atom; Ar is a phenyl radical; Ar' is a phenylene radical; m and n are zero or a positive integral number and aren't zero at the same time;
Claim 20
Dependent Claim
58 words
A composition as described in claim 15, wherein the polysiloxane has the formula: ##STR9## in which: R 5 , R 6 and R 7 are independently selected from the group consisting of an alkyl radical, a substituted alkyl radical, an aryl radical and a substituted aryl radical; x, y and z are zero or a positive integral number.
Claim 21
Dependent Claim
21 words
A composition as described in claim 16, wherein said polysiloxane is contained in amount of from 0.001% to 40% by weight.
Claim 22
Dependent Claim
29 words
A composition as described in claim 17, wherein the polymer has a weight average molecular weight of from 500 to 1500 and a molecular weight distribution smaller than 1.5.
Claim 23
Dependent Claim
17 words
A composition as described in claim 17, wherein the ratio of m:n is from 95:5 to 10:90.
Claim 24
Dependent Claim
17 words
A composition as described in claim 18, wherein the ratio of m:n is from 95:5 to 10:90.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |