Variable oscillation wavelength semiconduction laser device

Claim 2

A semiconductor laser device comprising: a semiconductor substrate; an optical wave guide structure formed on said substrate and having a first semiconductor light emission layer and a second semiconductor light emission layer and a barrier layer having a wider band gap than that of each of said first and second semiconductor light emission layers, said barrier layer being disposed between said first and second semiconductor light emission layers, wherein said first semiconductor light emission layer and said second semiconductor light emission layer respectively emit light having different wavelengths, and wherein said barrier layers are doped with an impurity; a plurality of clad layers stacked on opposite sides of said optical wave guide structure and having a lower refractive index than those of said first and second semiconductor light emission layers and said barrier layers; and means for applying a current to said semiconductor light emission layers.

Claim 3

A semiconductor laser device according to claim 1, wherein when the current applied by said applying means is approximate to an oscillation threshold, a light gain of one of said light emission layers, having a longer oscillation wavelength, is positive at a predetermined value and a light gain of another of said light emission layers, having a shorter oscillation wavelength, is also positive.

Claim 4

A semiconductor laser device according to claim 1, wherein said first light emission layer and second light emission layer emit lights having wavelengths λ 1 and λ 2 , respectively, and the following condition is met ##EQU9## where n 1 and n 2 are carrier densities of the first light emission layer and the second light emission layer, respectively, Γ 2 and g(n 2 ) are confinement factor and gain in the second light emission layer having the oscillation wavelength λ 2 , respectively, Γ' 2 and g' 2 (n 1 ) are confine coefficient and gain in the first light emission layer having the oscillation wavelength λ 1 , respectively, r 2 is a rate of spontaneous emission or nonradiative recombination of carriers in the second light emission layer, r 21 is a rate of transition of carriers from the second light emission layer to the first light emission layer, n 1th is a saturation carrier density of the first light emission layer, L 1 and L 2 are thickness of the first light emission layer and the second light emission layer, respectively, α 2 is a loss coefficient of the light having the wavelength λ 2 , L is a length of a resonator of the device, and R is a mean reflectance of an end plane of the resonator.

Claim 5

A semiconductor laser device according to claim 1, wherein said optical wave guide structure includes at least three semiconductor light emission layers for emitting lights of different wavelengths.

Claim 6

A semiconductor laser device according to claim 1, wherein said semiconductor substrate, said optical wave guide structure and said clad layers are made of GaAs and AlGaAs.

Claim 7

A semiconductor laser device comprising: a semiconductor substrate; an optical wave guide structure formed on said substrate and having a first semiconductor light emission layer and a second semiconductor light emission layer and a carrier layer having a wider band gap than that of each of said first and second semiconductor light emission layers, said barrier layer being disposed between said first and second semiconductor light emission layers, wherein said first semiconductor light emission layer and said second semiconductor light emission layer respectively emit light having different wavelengths; a plurality of clad layers stacked on opposite sides of said optical wave guide structure add having a lower refractive index than that of said optical wave guide structure; and means for applying a current to said semiconductor light emission layers, wherein when a current approximately equal to an oscillation threshold is applied to said semiconductor laser device, a light gain of said light emission layer, having a longer wavelength, is positive with respect to an oscillation frequency of at least another of said light emission layers having a shorter wavelength.

Claim 8

A semiconductor laser device comprising: a semiconductor substrate; an optical wave guide structure formed on said substrate and having a first semiconductor light emission layer and a second semiconductor light emission layer and a carrier layer having a wider band gap than that of each of said first and second semiconductor light emission layers, said barrier layer being disposed between said first and second semiconductor light emission layers, wherein said first semiconductor light emission layer and said second semiconductor light emission layer respectively emit light having different wavelengths; a plurality of clad layers stacked on opposite sides of said optical wave guide structure add having a lower refractive index than that of said optical wave guide structure; and means for applying a current to said semiconductor light emission layers, wherein when a current approximately equal to an oscillation threshold is applied to said semiconductor laser device, a light gain of said light emission layer, having a longer wavelength, is positive with respect to an oscillation frequency of at least another of said light emission layers having a shorter wavelength.

Claim 9

A semiconductor laser device according to claim 6, wherein said first light emission layer and second light emission layer emit lights having oscillation wavelengths λ 1 and λ 2 , respectively, and the following condition is met: ##EQU10## wherein n 1 and n 2 are carrier densities of said first light emission layer and said second light emission layer, respectively, Γr 2 and g(n 2 ) are confinement factor and gain in said second light emission layer having the oscillation wavelength λ 2 , respectively, r' 2 and g' 2 ) are confinement factor and gain in said first light emission layer having the oscillation wavelength λ 1 , respectively, r 2 is a rate of spontaneous emission or nonradiative recombination of carriers in said second light emission layer, r 21 is a rate of transition of carriers from said second light emission layer to said first light emission layer, n 1th is a saturation carrier density of said first light emission later, L 1 and L 2 are thickness of said first light layer and said second light emission layer, respectively, α 2 is a loss co-efficient of the light having the wavelength λ 2 , L is a length of a resonator of the device, and R is a mean reflectance of an end plane of the resonator.

Claim 10

A semiconductor laser device according to claim 6, wherein said optical wave guide structure includes at least three semiconductor light emission layers for emitting light beams of different wavelengths.

Claim 11

A semiconductor laser device according to claim 6, wherein said semiconductor substrate, said optical wave guide structure and said clad layers are made of GaAs and AlGaAs.

Claim 12

A semiconductor laser device comprising: a semiconductor substrate; an optical wave guide structure formed on said substrate and having a first semiconductor light emission layer and a barrier layer having a wider band gap than that of each of said first and second semiconductor light emission layers, said barrier layer being disposed between said first and second semiconductor light emission layers, wherein said first semiconductor light emission layer and said second semiconductor light emission layer respectively emit light having different wavelengths; a plurality of clad layers stacked on opposite sides of said optical wave guide structure and having a lower refractive index than that of said optical wave guide structure; and means for applying a current to said semiconductor light emission layers, wherein said first light emission layer and second light emission layer emit light beams having oscillation wavelengths λ 1 and λ 2 , respectively, and the following condition is met: ##EQU11## wherein n 1 and n 2 are carrier densities of said first light emission layer and said second light emission layer, respectively, Γ 2 and g(n 2 ) are confinement factor and gain in said second light emission layer having the oscillation wavelength λ 2 , respectively, Γ' 2 and g' 2 (n 1 ) are confinement factor and gain in said first light emission layer having the oscillation and wavelength λ 1 , respectively, r 2 is a rate of spontaneous emission or nonradiative recombination of carriers in said second light emission layer, r 21 is a rate of transition of carriers from said second light emission layer to said first light emission layer, n 1th is a saturation carrier density of said first light emission layer, L 1 and L 2 are thickness of said first light emission layer and said second light emission layer, respectively, α 2 is a loss coefficient of the light having the wavelength, α 2 is a loss coefficient of the light having the wavelength λ 2 , L is a length of a resonator of the device, and R is a mean reflectance of an end plane of the resonator.

Claim 13

A semiconductor laser device comprising: a semiconductor substrate; an optical wave guide structure formed on said substrate and having a first semiconductor light emission layer and a barrier layer having a wider band gap than that of each of said first and second semiconductor light emission layers, said barrier layer being disposed between said first and second semiconductor light emission layers, wherein said first semiconductor light emission layer and said second semiconductor light emission layer respectively emit light having different wavelengths; a plurality of clad layers stacked on opposite sides of said optical wave guide structure and having a lower refractive index than that of said optical wave guide structure; and means for applying a current to said semiconductor light emission layers, wherein said first light emission layer and second light emission layer emit light beams having oscillation wavelengths λ 1 and λ 2 , respectively, and the following condition is met: ##EQU11## wherein n 1 and n 2 are carrier densities of said first light emission layer and said second light emission layer, respectively, Γ 2 and g(n 2 ) are confinement factor and gain in said second light emission layer having the oscillation wavelength λ 2 , respectively, Γ' 2 and g' 2 (n 1 ) are confinement factor and gain in said first light emission layer having the oscillation and wavelength λ 1 , respectively, r 2 is a rate of spontaneous emission or nonradiative recombination of carriers in said second light emission layer, r 21 is a rate of transition of carriers from said second light emission layer to said first light emission layer, n 1th is a saturation carrier density of said first light emission layer, L 1 and L 2 are thickness of said first light emission layer and said second light emission layer, respectively, α 2 is a loss coefficient of the light having the wavelength, α 2 is a loss coefficient of the light having the wavelength λ 2 , L is a length of a resonator of the device, and R is a mean reflectance of an end plane of the resonator.

Claim 14

A semiconductor laser device according to claim 10, wherein said optical wave guide structure includes at least three semiconductor light emission layers for emitting light beams of different wavelengths.

Claim 15

A semiconductor laser device according to claim 10, wherein semiconductor substrate, said optical wave guide structure and said clad layers are made of GaAs and AlgaAs.