Abstract A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050 DEG to 850 DEG C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050 DEG to 850 DEG C., is not longer than 140 min.
In the method of growing silicon single-crystals by the Czochralski technique which comprises the steps of immersing a seed crystal in a silicon melt and pulling said seed crystal from said melt to thereby grow a silicon single-crystal, the improvement which comprises: (a) initially cooling the silicon single-crystal to 1,050° C., (b) cooling the silicon single-crystal from 1,050° to 850° C. in no more than 140 minutes, and (c) cooling the silicon single-crystal from 800° to 600° C. in no less than 120 minutes.
Claim 2
Dependent Claim
84 words
In the method of growing silicon single-crystals by the Czochralski technique which comprises the steps of immersing a seed crystal in a silicon melt and pulling said seed crystal from said melt to thereby grow a silicon single-crystal, the improvement which comprises: (a) initially cooling the silicon single-crystal to 1,050° C., (b) cooling the silicon single-crystal from 1,050° to 850° C. in no more than 140 minutes, and (c) cooling the silicon single-crystal from 800° to 600° C. in no less than 120 minutes.