US4661166A
Expired / Lapsed
US
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Method of manufacturing semiconductor device using a Czochralski wafer and multiple heat treatment
Assignee: Mitsubishi Electric Corp
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Filing: 1984-09-20
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Granted: 1987-04-28
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Expires: 2004-09-20
Abstract
Abstract The inventive method of manufacturing a semiconductor device is carried out by slicing a silicon single crystal grown by a Czochralski method, thereby to provide a wafer (1), annealing the wafer (1) at a temperature range of 600° C. to 800° C. in an atmosphere including an inert gas and a small amount of oxygen for approximately 2 to 6 hours, thereby to precipitate oxygen (2) in the whole wafer (1), and then annealing the wafer (1) in the temperature range of 1000° C. to 1100° C. in a water vapor atmosphere including chlorine, thereby to form an oxide film (3) on the surface of the wafer (1), whereby a denuded zone (4) is formed beneath the oxide film (3) while crystal defects (5a-5d, 6) serving as a getter of impurities such as metals are formed beneath the denuded zone. In accordance with the inventive method, a denuded zone (4) having a controlled thickness can be formed in the wafer (1) without being influenced by the initial crystal defects and the oxygen concentration of the wafer.
Inventors
- 👤 Tadashi Hirao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 20:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P36/00; H10P36/20; Y; Y10; Y10S; Y10S148/00; Y10S148/06; Y10S148/118
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
164 words
A method of manufacturing a semiconductor device, said method comprising the steps of: preparing a wafer obtained by slicing a silicon monocrystal grown by a Czonchralski method, said wafer including some number of crystal defects and oxygens; a first heat treatment, including the step of annealing said wafer in the temperature range of 600° C. to 800° C. in an atmosphere of an inert gas or an inert gas including a very small amount of oxygen for more than two hours, thereby to precipitate oxygen in said wafer; and a second heat treatment after said first heat treatment, including oxidation of said wafer in the temperature range of 1000° C. to 1100° C. in an atmosphere of a water vapor including chlorine for more than one hour, with an oxide film being formed on the surface of said wafer and a denuded zone being formed beneath said oxide film with said crystal defects serving as an intrinsic getter being retained in an inner layer.
Claim 2
Independent Claim
164 words
A method of manufacturing a semiconductor device, said method comprising the steps of: preparing a wafer obtained by slicing a silicon monocrystal grown by a Czonchralski method, said wafer including some number of crystal defects and oxygens; a first heat treatment, including the step of annealing said wafer in the temperature range of 600° C. to 800° C. in an atmosphere of an inert gas or an inert gas including a very small amount of oxygen for more than two hours, thereby to precipitate oxygen in said wafer; and a second heat treatment after said first heat treatment, including oxidation of said wafer in the temperature range of 1000° C. to 1100° C. in an atmosphere of a water vapor including chlorine for more than one hour, with an oxide film being formed on the surface of said wafer and a denuded zone being formed beneath said oxide film with said crystal defects serving as an intrinsic getter being retained in an inner layer.
Claim 3
Independent Claim
219 words
A method of manufacturing a semiconductor device, said method comprising the steps of: preparing a wafer obtained by slicing a silicon monocrystal grown by a Czochralski method, said wafer including some number of crystal defects and oxygen: a first heat treatment, including the step of annealing said wafer in the temperature range of 600° C. to 800° C. in an atmosphere of an inert gas or an inert gas including a very small amount of oxygen for more than two hours, thereby to precipitate oxygen in said wafer; a second heat treatment after said first heat treatment, including an oxidation of said wafer in the temperature range of 1000° C. to 1100° C. in an atmosphere of a water vapor including chlorine for more than one hour, with an oxide film being formed on the surface of said wafer and a denuded zone being formed beneath said oxide film with said crystal defects serving as an intrinsic getter being retained in an inner layer; and a third heat treatment after said first and second heat treatments, including annealing said wafer in the temperature range of 1150° C. to 1250° C. in an atmosphere of an inert gas for more than four hours, whereby the thickness of the denuded zone is increased without increasing the thickness of said oxide film.
Claim 4
Independent Claim
219 words
A method of manufacturing a semiconductor device, said method comprising the steps of: preparing a wafer obtained by slicing a silicon monocrystal grown by a Czochralski method, said wafer including some number of crystal defects and oxygen: a first heat treatment, including the step of annealing said wafer in the temperature range of 600° C. to 800° C. in an atmosphere of an inert gas or an inert gas including a very small amount of oxygen for more than two hours, thereby to precipitate oxygen in said wafer; a second heat treatment after said first heat treatment, including an oxidation of said wafer in the temperature range of 1000° C. to 1100° C. in an atmosphere of a water vapor including chlorine for more than one hour, with an oxide film being formed on the surface of said wafer and a denuded zone being formed beneath said oxide film with said crystal defects serving as an intrinsic getter being retained in an inner layer; and a third heat treatment after said first and second heat treatments, including annealing said wafer in the temperature range of 1150° C. to 1250° C. in an atmosphere of an inert gas for more than four hours, whereby the thickness of the denuded zone is increased without increasing the thickness of said oxide film.
Claim 5
Dependent Claim
39 words
A method in accordance with claim 1, wherein the gas providing the atmosphere for said first heat treatment is selected from the group consisting of N 2 , He, Ar and the same including a small amount of oxygen.
Claim 6
Dependent Claim
24 words
A method in accordance with claim 1: said chlorine in said atmosphere for said second heat treatment is provided in the form of HCl.
Claim 7
Dependent Claim
29 words
A method in accordance with claim 2, wherein: said atmosphere gas for said third heat treatment is selected from the group consisting of N 2 , He and Ar.
References Cited (Backward Citations)
US3997368A
Cited
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