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US4980749A
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P-N junction semiconductor device and method of fabrication
Assignee: Sanken Electric Co Ltd
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Filing: 1989-03-07
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Granted: 1990-12-25
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Expires: 2009-03-07
Abstract
Abstract A gallium arsenide diode is disclosed which has a very thin resistive layer of a metal oxide, typically titanium oxide, formed annularly on a semiconductor substrate across the exposed annular periphery of a p-n junciton. The titanium oxide layer has a sheet resistance of not less than 10 kilohms per square and creates a Schottky barrier between itself and the neighboring n type region of the substrate. The titanium oxide layer can be formed by first vacuum depositing titanium on the substrate and then heating the titanium layer.
Inventors
- 👤 Koji Ohtsuka
- 👤 Hirokazu Goto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:18
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/115; H10D8/00; H10D8/411; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D62/00; H10D62/80; H10D62/85; H10D64/118; H10D64/60; H10D64/64; Y; Y10; Y10S; Y10S148/00; Y10S148/14
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
133 words
A p-n junction semiconductor device comprising: (a) a first semiconductor region of a first conductivity type; (b) a second semiconductor region of a second conductivity type opposite to the first conductivity type, the second semiconductor region being of lower resistivity than the first semiconductor region and being disposed contiguous to the first semiconductor region with the consequent creation of a p-n junction therebetween; (c) an electrode on the second semiconductor region; and (d) a resistive layer formed at least on the first semiconductor region so as to surround the electrode and electrically connected to the electrode, the resistive layer being of such a material as to provide a sheet resistance of not less than 10 kilohms per square and to create a Schottky barrier between the resistive layer and the first semiconductor region.
Claim 2
Dependent Claim
133 words
A p-n junction semiconductor device comprising: (a) a first semiconductor region of a first conductivity type; (b) a second semiconductor region of a second conductivity type opposite to the first conductivity type, the second semiconductor region being of lower resistivity than the first semiconductor region and being disposed contiguous to the first semiconductor region with the consequent creation of a p-n junction therebetween; (c) an electrode on the second semiconductor region; and (d) a resistive layer formed at least on the first semiconductor region so as to surround the electrode and electrically connected to the electrode, the resistive layer being of such a material as to provide a sheet resistance of not less than 10 kilohms per square and to create a Schottky barrier between the resistive layer and the first semiconductor region.
Claim 3
Dependent Claim
24 words
The p-n junction semiconductor device of claim 1 wherein the sheet resistance of the resistive layer is not more than 10 megohms per square.
Claim 4
Dependent Claim
16 words
The p-n junction semiconductor device of claim 1 wherein the resistive layer is of titanium oxide.
Claim 5
Dependent Claim
17 words
The p-n junction semiconductor device of claim 1 further comprising an insulating layer on the resistive layer.
Claim 6
Dependent Claim
16 words
The p-n junction semiconductor device of claim 4 wherein the insulating layer is of silicon oxide.
Claim 7
Dependent Claim
33 words
The p-n junction semiconductor device of claim 4 further comprising a field plate formed on the first semiconductor region via the resistive layer and the insulating layer and electrically connected to the electrode.
Claim 8
Dependent Claim
50 words
The p-n junction semiconductor device of claim 1 further comprising: (a) a third semiconductor region of the first conductivity type disposed contiguous to the first semiconductor region and having an impurity concentration higher than that of the first semiconductor region; and (b) an ohmic electrode on the third semiconductor region.
Claim 9
Dependent Claim
19 words
The p-n junction semiconductor device of claim 1 wherein the first and second semiconductor regions are of gallium arsenide.
Claim 10
Dependent Claim
153 words
A p-n junction semiconductor device comprising: (a) a first semiconductor region of a first conductivity type; (b) a second semiconductor region of a second conductivity type opposite to the first conductivity type, the second semiconductor region being of lower resistivity than the first semiconductor region and being disposed contiguous to the first semiconductor region with the consequent creation of a p-n junction therebetween, the p-n junction having an annular periphery exposed from between the first and second semiconductor regions; (c) electrode means on the second semiconductor region; and (d) a resistive layer formed on the first and second semiconductor regions across the exposed periphery of the p-n junction therebetween and electrically connected to the electrode means, the resistive layer being of such a material as to provide a sheet resistance of not less than 10 kilohms per square and to create a Schottky barrier between the resistive layer and the first semiconductor region.
Claim 11
Dependent Claim
153 words
A p-n junction semiconductor device comprising: (a) a first semiconductor region of a first conductivity type; (b) a second semiconductor region of a second conductivity type opposite to the first conductivity type, the second semiconductor region being of lower resistivity than the first semiconductor region and being disposed contiguous to the first semiconductor region with the consequent creation of a p-n junction therebetween, the p-n junction having an annular periphery exposed from between the first and second semiconductor regions; (c) electrode means on the second semiconductor region; and (d) a resistive layer formed on the first and second semiconductor regions across the exposed periphery of the p-n junction therebetween and electrically connected to the electrode means, the resistive layer being of such a material as to provide a sheet resistance of not less than 10 kilohms per square and to create a Schottky barrier between the resistive layer and the first semiconductor region.
Claim 12
Dependent Claim
16 words
The p-n junction semiconductor device of claim 9 wherein the resistive layer is of titanium oxide.
Claim 13
Dependent Claim
18 words
The p-n junction semiconductor device of claim 10 further comprising an insulating layer on the titanium oxide layer.
Claim 14
Dependent Claim
16 words
The p-n junction semiconductor device of claim 11 wherein the insulating layer is of silicon oxide.
Claim 15
Dependent Claim
35 words
The p-n junction semiconductor device of claim 11 further comprising a field plate formed on the first semiconductor region via the titanium oxide layer and the insulating layer and electrically connected to the electrode means.
Claim 16
Dependent Claim
50 words
The p-n junction semiconductor device of claim 9 further comprising: (a) a third semiconductor region of the first conductivity type disposed contiguous to the first semiconductor region and having an impurity concentration higher than that of the first semiconductor region; and (b) an ohmic electrode on the third semiconductor region.
Claim 17
Dependent Claim
19 words
The p-n junction semiconductor device of claim 9 wherein the first and second semiconductor regions are of gallium arsenide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |