Patent US4980204A successfully refreshed from Google Patents.
US4980204A
Expired / Lapsed
US
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Metal organic chemical vapor deposition method with controlled gas flow rate
Assignee: Fujitsu Ltd
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Filing: 1988-11-15
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Granted: 1990-12-25
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Expires: 2008-11-15
Abstract
Abstract An apparatus for growing a compound semiconductor layer by metal organic chemical vapor deposition (MOCVD) is disclosed. Utilizing the apparatus, the semiconductor layer of uniform thickness and uniform composition can be grown. The apparatus includes a plurality of vent pipes which spout a mixed gas of source material gases and a dilution gas into a reactor chamber, vertical to a substrate surface. The apparatus also includes a gas supply system in which a gas flow rate through each vent pipe is made to be controllable individually by a flow controlling device. In addition, a controller is operatively connected to the flow controlling devices, so that automatic growth of a semiconductor layer of a high quality can be achieved. When two source material gases used are mutually too reactive and deposits are formed within the gas supply system, two separate gas supply systems for these two gases are demonstrated to be effective. Another embodiment which enables individual control of concentration of the source material gas and the gas flow rate through each vent pipe, is also disclosed.
Inventors
- 👤 Takuya Fujii
- 👤 Susumu Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:27
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/06; C23C16/18; C23C16/52; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
170 words
A metal organic chemical vapor deposition method for growing a compound semiconductor layer on a substrate, comprising steps of: disposing the substrate in a reactor chamber, the substrate being loaded on a support and rotated around the center axis of the substrate; heating the substrate by a heating apparatus disposed outside the reactor chamber; flowing a mixed gas into the reactor chamber through a plurality of vent pipes, and releasing the used mixed gas through an exhaust outlet to the outside of the reactor chamber, the mixed gas being spouted out onto the substrate surface substantially vertical thereto, the mixed gas comprising at least a metal organic gas and a reactive gas which reacts with the metal organic gas; and separately controlling the gas flow rate through each of the vent pipes, so that there is a difference between the gas flow rates through one of the vent pipes facing the center region of the substrate and through one of the vent pipes facing the peripheral region of the substrate.
Claim 2
Dependent Claim
170 words
A metal organic chemical vapor deposition method for growing a compound semiconductor layer on a substrate, comprising steps of: disposing the substrate in a reactor chamber, the substrate being loaded on a support and rotated around the center axis of the substrate; heating the substrate by a heating apparatus disposed outside the reactor chamber; flowing a mixed gas into the reactor chamber through a plurality of vent pipes, and releasing the used mixed gas through an exhaust outlet to the outside of the reactor chamber, the mixed gas being spouted out onto the substrate surface substantially vertical thereto, the mixed gas comprising at least a metal organic gas and a reactive gas which reacts with the metal organic gas; and separately controlling the gas flow rate through each of the vent pipes, so that there is a difference between the gas flow rates through one of the vent pipes facing the center region of the substrate and through one of the vent pipes facing the peripheral region of the substrate.
Claim 3
Dependent Claim
32 words
A metal organic chemical vapor deposition method according to claim 1, wherein the mixed gas further comprises a dilution gas which is inactive with respect to other gases forming the mixed gas.
Claim 4
Dependent Claim
264 words
A metal organic chemical vapor deposition method for growing a compound semiconductor layer on a substrate having a surface, comprising steps of: disposing the substrate in a reactor chamber, the substrate being loaded on a support and rotated around the center axis of the substrate; heating the substrate by a heating apparatus disposed outside the reactor chamber; flowing first and second kinds of gas into the reactor chamber through first and second groups of vent pipes, respectively, and releasing the used gases through an exhaust outlet to the outside of the reactor chamber, the first and second kinds of gas both being spouted out vertically onto the substrate surface, the first kind of gas comprising a metal organic gas and the second kind of gas comprising a reactive gas which reacts with the metal organic gas, the first and second groups of vent pipes having substantially the same number of vent pipes which is at least two, each vent pipe of the first group being arranged adjacent to a corresponding vent pipe of the second group; and separately controlling the gas flow rate through each of the vent pipes, so that a mixing ratio of the first kind of gas to the second kind of gas spouted onto the substrate is controlled to produce a difference between the gas flow rates through one of the vent pipes facing the center region of the substrate and through one of the vent pipes facing the peripheral region of the substrate, the difference in the gas flow rates being sufficient to produce a uniform grown semiconductor layer.
Claim 5
Dependent Claim
264 words
A metal organic chemical vapor deposition method for growing a compound semiconductor layer on a substrate having a surface, comprising steps of: disposing the substrate in a reactor chamber, the substrate being loaded on a support and rotated around the center axis of the substrate; heating the substrate by a heating apparatus disposed outside the reactor chamber; flowing first and second kinds of gas into the reactor chamber through first and second groups of vent pipes, respectively, and releasing the used gases through an exhaust outlet to the outside of the reactor chamber, the first and second kinds of gas both being spouted out vertically onto the substrate surface, the first kind of gas comprising a metal organic gas and the second kind of gas comprising a reactive gas which reacts with the metal organic gas, the first and second groups of vent pipes having substantially the same number of vent pipes which is at least two, each vent pipe of the first group being arranged adjacent to a corresponding vent pipe of the second group; and separately controlling the gas flow rate through each of the vent pipes, so that a mixing ratio of the first kind of gas to the second kind of gas spouted onto the substrate is controlled to produce a difference between the gas flow rates through one of the vent pipes facing the center region of the substrate and through one of the vent pipes facing the peripheral region of the substrate, the difference in the gas flow rates being sufficient to produce a uniform grown semiconductor layer.
Claim 6
Dependent Claim
45 words
A metal organic chemical vapor deposition method according to claim 3, wherein the first and second kinds of gas each includes a dilution gas which is inactive with respect to the other gases forming the corresponding one of the first and second kinds of gas.
Claim 7
Dependent Claim
238 words
A metal organic chemical vapor deposition method for growing a compound semiconductor layer on a substrate having a surface, comprising steps of: disposing the substrate in a reactor chamber, the substrate being loaded on a support and rotated around the enter axis of the substrate; heating the substrate by a heating apparatus disposed outside the reactor chamber; flowing a diluted mixed gas into the reactor chamber through a plurality of vent pipes and releasing the used gases through an exhaust outlet to the outside of the reactor chamber, the diluted mixed gas being spouted out from the vent pipes substantially vertically onto the substrate surface, the diluted mixed gas being formed by mixing a mixed gas and a dilution gas supplied through first and second sets of branch pipes, respectively, both of the first and second sets of branch pipes having the same number of branch pipes as the number of vent pipes, and the mixed gas including a metal organic gas and a reactive gas which reacts with the metal organic gas; and separately controlling the gas flow rate through each of the branch pipes, so that a concentration of the mixed gas in the diluted mixed gas is controlled and there is a difference between the gas flow rates through one of the vent pipes facing the center region of the substrate and through one of the vent pipes facing the peripheral region of the substrate.
Claim 8
Dependent Claim
238 words
A metal organic chemical vapor deposition method for growing a compound semiconductor layer on a substrate having a surface, comprising steps of: disposing the substrate in a reactor chamber, the substrate being loaded on a support and rotated around the enter axis of the substrate; heating the substrate by a heating apparatus disposed outside the reactor chamber; flowing a diluted mixed gas into the reactor chamber through a plurality of vent pipes and releasing the used gases through an exhaust outlet to the outside of the reactor chamber, the diluted mixed gas being spouted out from the vent pipes substantially vertically onto the substrate surface, the diluted mixed gas being formed by mixing a mixed gas and a dilution gas supplied through first and second sets of branch pipes, respectively, both of the first and second sets of branch pipes having the same number of branch pipes as the number of vent pipes, and the mixed gas including a metal organic gas and a reactive gas which reacts with the metal organic gas; and separately controlling the gas flow rate through each of the branch pipes, so that a concentration of the mixed gas in the diluted mixed gas is controlled and there is a difference between the gas flow rates through one of the vent pipes facing the center region of the substrate and through one of the vent pipes facing the peripheral region of the substrate.
Claim 9
Dependent Claim
19 words
A metal organic chemical vapor deposition method according to claim 5, wherein the dilution gas is a hydrogen gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |