US4979008A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components
Assignee: STMicroelectronics SRL
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Filing: 1989-01-18
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Granted: 1990-12-18
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Expires: 2009-01-18
Abstract
Abstract A vertical, isolated-collector transistor of the pnp type comprises an island doped similarly to the collector region and formed in the surface epitaxial layer of the transistor between that collector region and one of the isolation zones. That island extends in depth to penetrate a similarly doped intermediate region and short out the epitaxial layer included between the isolating layer and the collector region so as to suppress the effects of active parasitic junction components by holding a transistor and a silicon-controlled rectifier of parasitic types, as nesting within the structure of the vertical pnp transistor, in a cut-off state.
Inventors
- 👤 Marco Siligoni
- 👤 Flavio Villa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:11
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; H10D10/00; H10D10/40; H10D10/421; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D62/138; Y; Y10; Y10S; Y10S257/00; Y10S257/914; Y10S257/918
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
205 words
A vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components, said transistor comprising a substrate of a semiconductor material having a low concentration of a dopant of a first type, a first layer or bottom well layer extending over the substrate and having a low concentration of a dopant of a second type, a buried intermediate region overlying said first bottom well layer and being higher in concentration of the first-type dopant, an epitaxial layer doped with the second-type dopant and covering the substrate and said region to define a transistor surface, respective emitter, base, and collector regions of said transistor which are separated structurally and formed in said epitaxial layer, and oppositely located isolation zones whose depth extends to the substrate and which are effective to border said regions laterally in the epitaxial layer, the collector region extending in depth to penetrate said intermediate region, characterized in that said device comprises an island region doped of first-type dopant similarly to the collector region and laterally distinct and separate from the collector region and formed in the epitaxial layer between said collector region and an isolation zone and extending in dept to penetrate said intermediate region.
Claim 2
Dependent Claim
205 words
A vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components, said transistor comprising a substrate of a semiconductor material having a low concentration of a dopant of a first type, a first layer or bottom well layer extending over the substrate and having a low concentration of a dopant of a second type, a buried intermediate region overlying said first bottom well layer and being higher in concentration of the first-type dopant, an epitaxial layer doped with the second-type dopant and covering the substrate and said region to define a transistor surface, respective emitter, base, and collector regions of said transistor which are separated structurally and formed in said epitaxial layer, and oppositely located isolation zones whose depth extends to the substrate and which are effective to border said regions laterally in the epitaxial layer, the collector region extending in depth to penetrate said intermediate region, characterized in that said device comprises an island region doped of first-type dopant similarly to the collector region and laterally distinct and separate from the collector region and formed in the epitaxial layer between said collector region and an isolation zone and extending in dept to penetrate said intermediate region.
Claim 3
Dependent Claim
43 words
A transistor according to claim 1, characterized in that said island extends laterally between only one side of said collector region and an adjacent side of said isolation zone, and further comprising means for electrically connecting said island region to said epitaxial layer.
Claim 4
Dependent Claim
59 words
A transistor according to claims 1 or 2, characterized in that said island region is provided with a metallic contact, and that in said epitaxial layer there is formed a second contact island that has a higher concentration of second-type dopant, said second island being in turn provided with a contact, said contacts being interconnected electrically by a conductor.
Claim 5
Dependent Claim
25 words
A transistor as claimed in claim 1, further comprising separate surface contacts to the emitter, base, collector, and island regions and to the epitaxial layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-17 | 1994-06-18 | 1994-12-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-17 | 1998-06-18 | 1998-12-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-17 | 2002-06-18 | 2002-12-18 | $7700.00 | Window Closed / Lapsed |