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US4976266A Expired / Lapsed US ⏱️ 0.0 years remaining

Methods of in vivo radiation measurement

Assignee: National Technology and Engineering Solutions of Sandia LLC
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Filing: 1988-07-25
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Granted: 1990-12-11
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Expires: 2008-07-25
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Abstract

Abstract Methods of and apparatus for in vivo radiation measurements relay on a MOSFET dosimeter of high radiation sensitivity with operates in both the passive mode to provide an integrated dose detector and active mode to provide an irradiation rate detector. A compensating circuit with a matched unirradiated MOSFET is provided to operate at a current designed to eliminate temperature dependence of the device. Preferably, the MOSFET is rigidly mounted in the end of a miniature catheter and the catheter is implanted in the patient proximate the radiation source.

Inventors

  • 👤 Dennis D. Huffman
  • 👤 Robert C. Hughes
  • 👤 Charles A. Kelsey
  • 👤 Richard Lane
  • 👤 Antonio J. Ricco
  • 👤 Jay B. Snelling
  • 👤 Thomas E. Zipperian

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 20:57
CPC Classifications
G; G01; G01T; G01T1/00; G01T1/16; G01T1/24; A; A61; A61B; A61B6/00; A61B6/42; A61B6/4208; A61B6/4258; G01T1/02; G01T1/026; G01T1/161; A61N; A61N5/00; A61N5/10; A61N5/1048; A61N5/1071; A61N2005/1072

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 95 words
The method for in vivo monitoring of radiation applied to a patient, the method comprising the steps of: placing a radiation source at a fixed location inside the patient's body; inserting a radiation sensitive MOSFET inside the patient's body in close proximity to said radiation source, said MOSFET having a threshold voltage that changes in accordance with the cumulative radiation dosage; removing said MOSFET from the body after a period of radiation; and measuring the change in threshold voltage caused by the radiation from said source after said MOSFET has been removed from the body.
Claim 2
Independent Claim 95 words
The method for in vivo monitoring of radiation applied to a patient, the method comprising the steps of: placing a radiation source at a fixed location inside the patient's body; inserting a radiation sensitive MOSFET inside the patient's body in close proximity to said radiation source, said MOSFET having a threshold voltage that changes in accordance with the cumulative radiation dosage; removing said MOSFET from the body after a period of radiation; and measuring the change in threshold voltage caused by the radiation from said source after said MOSFET has been removed from the body.
Claim 3
Dependent Claim 27 words
The method of claim 1 further including the step of placing a catheter in the patient, the MOSFET being inserted into the patient's body through said catheter.
Claim 4
Dependent Claim 19 words
The method of claim 2 further comprising the step of: calibrating the MOSFET prior to said step of inserting.
Claim 5
Dependent Claim 39 words
The method of claim 3 further comprising the steps of electrically shorting the MOSFET before said period of radiation; and disconnecting the electrical short after said period of radiation and prior to measuring the threshold voltage of said MOSFET.
Claim 6
Dependent Claim 37 words
The method of claim 4, further including the step of comparing the radiation sensing MOSFET to an identical reference MOSFET which has not been subjected to irradiation by matching the gate voltages thereof in a comparative circuit.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-12-10 1994-06-11 1994-12-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-12-10 1998-06-11 1998-12-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-12-10 2002-06-11 2002-12-11 $7700.00 Window Closed / Lapsed

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