User programmable redundant memory

Claim 2

A user programmable redundant memory having a predetermined amount of redundant circuitry controlled by the user, comprising: first means for receiving a redundancy size signal controlled by the user for selectively changing between predetermined amounts of memory redundancy in response to user variation of values of the redundancy size signal, said redundancy size signal's value defining one of a plurality of predetermined percentages of the memory which is to be redundant by enabling redundant circuitry in the memory for storing data; and second means coupled to the first means, said second means receiving both the redundancy size signal and an address signal addressing a data operand to be communicated by the memory, said second means enabling the memory to utilize the redundant circuitry in the memory when the address signal addresses a data operand in a redundant portion of the memory defined by the redundancy size signal.

Claim 3

The user programmable redundant memory of claim 1 wherein said first means further comprises a multi-bit storage register for storing the redundancy size signal.

Claim 4

The user programmable redundant memory of claim 2 wherein said second means further comprises: logic circuitry for receiving the redundancy size signal, the address signal and an enable signal provided by the user for enabling any memory redundancy to be utilized, said redundancy signal being implemented as a single bit stored by the multi-bit storage register.

Claim 5

The user programmable redundant memory of claim 3 wherein said logic circuitry further comprises: a plurality of logic gates, each of which receives a predetermined address bit of the address signal and a predetermined bit of the redundancy size signal, said plurality of logic gates providing a plurality of logic signals; a first logic gate for receiving the plurality of logic signals and providing an output indicating if the address signal is within a redundant portion of the memory as determined by the redundancy size signal; and a second logic gate coupled to the first logic gate for receiving the enable signal and the output of the first logic gate, said second logic gate outputting the output of the first logic gate only if said enable signal is asserted.

Claim 6

The user programmable redundant memory of claim 4 wherein each of the plurality of logic gates are NOR gates, said first logic gate is a NOR gate, and said second logic gate is a NAND gate.

Claim 7

The user programmable redundant memory of claim 1 wherein the memory is an EEPROM.

Claim 8

In a memory circuit which stores data, a method of user custom programming a predetermined amount of redundant circuitry in the memory circuit, comprising the steps of: structuring the memory to have a portion thereof comprising two halves, a programmable percentage of a first half of the programmable percentage of a second half of the portion; receiving a redundancy size signal provided by said user for selectively changing between predetermined amounts of memory redundancy in response to user variation of values of the redundancy size signal, said redundancy size signal's value defining one of a plurality of predetermined percentages of the memory circuit which is to have redundant circuitry; receiving an address indicative of a location in the memory circuit of data which is to be communicated; and providing a redundancy signal for use by the memory circuit when the received address is within said percentage of the portion of the memory circuit which has redundant circuitry.

Claim 9

In a memory circuit which stores data, a method of user custom programming a predetermined amount of redundant circuitry in the memory circuit, comprising the steps of: structuring the memory to have a portion thereof comprising two halves, a programmable percentage of a first half of the programmable percentage of a second half of the portion; receiving a redundancy size signal provided by said user for selectively changing between predetermined amounts of memory redundancy in response to user variation of values of the redundancy size signal, said redundancy size signal's value defining one of a plurality of predetermined percentages of the memory circuit which is to have redundant circuitry; receiving an address indicative of a location in the memory circuit of data which is to be communicated; and providing a redundancy signal for use by the memory circuit when the received address is within said percentage of the portion of the memory circuit which has redundant circuitry.

Claim 10

The method of claim 7 further comprising the step of: implementing the memory circuit as one of either an EEPROM, a flash EPROM or a DRAM.

Claim 11

The method of claim 7 wherein said redundancy signal is provided by: logically comparing the received address with the redundancy size signal to determine whether said redundancy signal should be asserted.

Claim 13

The method of claim 7 wherein said portion of the memory circuit is substantially all of the memory circuit.