Process for the production of an insulating layer embedded in a semiconductor substrate by ionic implantation and semiconductor structure comprising such layer

Claim 2

A process for producing an oxide continuous layer (104) buried in a silicon monocrystalline substrate (102), consisting essentially of the steps, in sequence: (A) a first ionic implantation of oxygen in the substrate which is at a temperature from 500° to 700° C. for performing an in situ annealing of the lattice defects created by the first implantation, said first implantation being performed at a predetermined energy and at a dose lower than 1.5×10 18 ions O + /cm 2 whereby to avoid the formation of dislocations in the silicon film provided in the oxide layer; (B) a first annealing of the structure obtained in step (A) at a temperature higher than 800° C., but lower than the melting temperature of the substrate, whereby to produce said oxide buried layer and precipitates of silicon at the interfaces silicon-oxide; (C) at least one second ionic implantation of oxygen in the structure obtained in step (B) at said predetermined energy and at a dose lower than 1.5×10 18 ions O + /cm 2 , said second implantation being performed while the substrate is at a temperature from 500° to 700° C. for performing an in situ annealing of the lattice defects created by said second implantation; and,. (D) at least one second annealing of the structure obtained in step (C) at a temperature higher than 800° C., but lower than the melting temperature of the substrate, so as to oxidize said precipitates of silicon.

Claim 3

A process according to claim 1, characterized in that the number of implantations and the dose of implanted ions depend on the total dose of ions which is to be implanted.

Claim 4

A process according to claim 1, characterized in that the annealings are performed at a temperature higher than 1100° C.

Claim 5

A process according to claim 1, characterized in that the annealings are performed at a temperature between 1300° and 1400° C.

Claim 6

A semiconductor structure comprising an insulating layer (104) interposed between a semiconductor substrate (102) and a semiconductor film (106) and obtained by the process according to claim 1, characterized in that the semiconductor film (106) has a level of dislocations less than 10 5 per cm 2 , and the insulating layer (104) is homogeneous.

Claim 7

A process according to claim 1, characterized in that the number of implantations is 2, each implantation being performed at 0.8·10 18 ions/cm 2 .

Claim 8

A process for producing an oxide continuous layer (104) buried in a silicon monocrystalline substrate (102), consisting essentially of the steps in sequence: (A) a first ionic implantation of oxygen in the substrate which is at a temperature from 500° to 700° C. for performing an in situ annealing of the lattice defects created by the first implantation, said first implantation being performed at a predetermined energy and at a dose lower than 1.5×10 18 ions O + /cm 2 whereby to avoid the formation of dislocations in the silicon film provided in the oxide layer; (B) a first encapsulation of the structure obtained in step (A), (C) a first annealing of the structure obtained in step (B) at a temperature higher than 800° C., but lower than the melting temperature of the substrate, whereby to produce said oxide buried layer and precipitates of silicon at the interfaces silicon-oxide; (D) eliminating the first encapsulation; (E) at least one second ionic implantation of oxygen in the structure obtained in step (D) at said predetermined energy and at a dose lower than 1.5×10 18 ions O + /cm 2 , said second implantation being performed while the substrate is at a temperature from 500° to 700° C. for performing an in situ annealing of the lattice defects created by said second implantation; (F) at least second encapsulation of the structure obtained in step (E); and (G) at least one second annealing of the structure obtained in step (F) at a temperature higher than 800° C., but lower than the melting temperature of the substrate, so as to oxidize said precipitates of silicon.

Claim 9

A process for producing an oxide continuous layer (104) buried in a silicon monocrystalline substrate (102), consisting essentially of the steps in sequence: (A) a first ionic implantation of oxygen in the substrate which is at a temperature from 500° to 700° C. for performing an in situ annealing of the lattice defects created by the first implantation, said first implantation being performed at a predetermined energy and at a dose lower than 1.5×10 18 ions O + /cm 2 whereby to avoid the formation of dislocations in the silicon film provided in the oxide layer; (B) a first encapsulation of the structure obtained in step (A), (C) a first annealing of the structure obtained in step (B) at a temperature higher than 800° C., but lower than the melting temperature of the substrate, whereby to produce said oxide buried layer and precipitates of silicon at the interfaces silicon-oxide; (D) eliminating the first encapsulation; (E) at least one second ionic implantation of oxygen in the structure obtained in step (D) at said predetermined energy and at a dose lower than 1.5×10 18 ions O + /cm 2 , said second implantation being performed while the substrate is at a temperature from 500° to 700° C. for performing an in situ annealing of the lattice defects created by said second implantation; (F) at least second encapsulation of the structure obtained in step (E); and (G) at least one second annealing of the structure obtained in step (F) at a temperature higher than 800° C., but lower than the melting temperature of the substrate, so as to oxidize said precipitates of silicon.

Claim 10

A process according to claim 7, characterized in that the number of implantations and the dose of implanted ions depend on the total dose of ions which is to be implanted.

Claim 11

A process according to claim 7, characterized in that the annealings are performed at a temperature higher than 1100° C.

Claim 12

A process according to claim 7, characterized in that the annealings are performed at a temperature between 1300° and 1400° C.

Claim 13

A semiconductor structure comprising an insulating layer (104) interposed between a semiconductor substrate (102) and a semiconductor film (106) and obtained by the process according to claim 7, characterized in that the semiconductor film (106) has a level of dislocations less than 10 5 per cm 2 , and the insulating layer (104) is homogeneous.

Claim 14

A process according to claim 7, characterized in that the number of implantations is 2, each implantation being performed at 0.8·10 18 ions/cm 2 .