US4974044A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Devices having asymmetric delta-doping
Assignee: Nokia Bell Labs
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Filing: 1989-04-21
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Granted: 1990-11-27
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Expires: 2009-04-21
Abstract
Abstract The use of alternating n and p type regions asymmetrically spaced in a semiconductor material yields extremely advantageous properties. In particular, by controlling the doping level and the spatial configuration of the doped region both the device response and its optical properties are controllable. Therefore, in applications such as those involving optical switches LEDs, lasers and long wavelength detectors, both the speed of device and its optical properties are controllable. As a result, greater fabrication flexibility than previously available is possible.
Inventors
- 👤 John E. Cunningham
- 👤 Alastair M. Glass
- 👤 Erdmann F. Schubert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:20
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8171; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/1468; H01S5/305; H01S5/3408
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
107 words
A device comprising a semiconductor material portion including three regions said regions comprising a first type having acceptor states and a second type having donor states with two of said regions being one type and one of said regions being the other type wherein (1) said first type regions and said second type regions are alternately spaced along a direction within said portion (2) said alternately spaced regions are separated by regions of said semiconductor material with a low carrier density and (3) said regions are asymmetrically spaced wherein the spacings between one of said regions and the adjoining two regions differ by more than 15 percent.
Claim 2
Independent Claim
107 words
A device comprising a semiconductor material portion including three regions said regions comprising a first type having acceptor states and a second type having donor states with two of said regions being one type and one of said regions being the other type wherein (1) said first type regions and said second type regions are alternately spaced along a direction within said portion (2) said alternately spaced regions are separated by regions of said semiconductor material with a low carrier density and (3) said regions are asymmetrically spaced wherein the spacings between one of said regions and the adjoining two regions differ by more than 15 percent.
Claim 3
Dependent Claim
15 words
The device of claim 1 wherein said donor and acceptor states are produced by dopants.
Claim 4
Dependent Claim
14 words
The device of claim 1 wherein said semiconductor material comprises a III-V semiconductor material.
Claim 5
Dependent Claim
22 words
The device of claim 3 wherein said material comprises a composition chosen from the group consisting of indium phosphide and gallium aresenide.
Claim 6
Dependent Claim
14 words
The device of claim 1 wherein said semiconductor material comprises a II-VI semiconductor material.
Claim 7
Dependent Claim
14 words
The device of claim 1 wherein said semiconductor material comprises a group IV material.
Claim 8
Dependent Claim
22 words
The device of claim 6 wherein said semiconductor material comprises a composition chosen from the group consisting of silicon, germanium, and diamond.
Claim 9
Dependent Claim
15 words
The device of claim 1 wherein said semiconductor material portion includes a deep level dopant.
Claim 10
Dependent Claim
24 words
The device of claim 1 wherein said regions are spaced such that in the absence of an applied external field incident light is reflected.
Claim 11
Dependent Claim
7 words
The device of claim 1 including electrodes.
Claim 12
Dependent Claim
13 words
The device of claim 10 wherein said electrodes are adapted for injecting charge.
Claim 13
Dependent Claim
17 words
The device of claim 10 wherein at least one of said electrodes is transparent to incident light.
Claim 14
Dependent Claim
16 words
The device of claim 10 wherein said electrodes are configured on the faces of said device.
Claim 15
Dependent Claim
16 words
The device of claim 10 wherein said electrodes are configured on the edges of said device.
Claim 16
Dependent Claim
14 words
The device of claim 1 wherein said regions are less than 20 Å thick.
Claim 17
Dependent Claim
15 words
The device of claim 15 wherein said regions are separated by at least 20 Å.
Claim 18
Dependent Claim
15 words
The device of claim 1 wherein said regions are separated by at least 20 Å.
Claim 19
Dependent Claim
13 words
The device of claim 1 wherein said regions are disposed on a substrate.
References Cited (Backward Citations)
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