US4772335A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photovoltaic device responsive to ultraviolet radiation
Assignee: Stemcor Corp
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Filing: 1987-10-15
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Granted: 1988-09-20
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Expires: 2007-10-15
Abstract
Abstract An improved, low cost photovoltaic device responsive to ultraviolet radiation includes a body of amorphous silicon having a front contact formed of a thin film of a transparent, electrically conductive oxide. In order to achieve desired quantum efficiencies in the spectral region from 200-400 nm, the oxide film is less than 50 nm in thickness and most preferably is about 15 to 30 nm in thickness. A metallic current collector may be disposed on part of the oxide film to reduce resistive losses in current collection. The amorphous silicon body may include a P-I-N structure or a doped film disposed on an oppositely doped crystalline silicon layer. In some embodiments of the device, the amorphous silicon region or body disposed in contact with the oxide film is preferably microcrystalline silicon.
Inventors
- 👤 Wingo C. Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:29
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F30/221; H10F77/00; H10F77/20; H10F77/244; H10F77/247; H10F77/30; H10F77/306
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
67 words
A photovoltaic device responsive to incident energy in the ultraviolet range of the electromagnetic spectrum comprising: an at least partially electrically conductive layer, a body of amorphous silicon disposed on said layer, and a thin film of an electrically conductive, light-transmissive oxide for receiving incident light disposed on said amorphous body opposite said layer, said light-transmissive oxide film having a thickness of less than about 30 nm.
Claim 2
Dependent Claim
67 words
A photovoltaic device responsive to incident energy in the ultraviolet range of the electromagnetic spectrum comprising: an at least partially electrically conductive layer, a body of amorphous silicon disposed on said layer, and a thin film of an electrically conductive, light-transmissive oxide for receiving incident light disposed on said amorphous body opposite said layer, said light-transmissive oxide film having a thickness of less than about 30 nm.
Claim 3
Dependent Claim
24 words
The device of claim 1 wherein said oxide film is chosen from the group consisting of indium oxide doped with tin and tin oxide.
Claim 4
Dependent Claim
19 words
The photovoltaic device of claim 1 wherein said oxide layer has a thickness of at least about 15 nm.
Claim 5
Dependent Claim
37 words
The device of claim 1 wherein said body of amorphous silicon includes an essentially intrinsic region sandwiched between p-type and n-type regions, said three regions being disposed on said layer for serial passage of light through them.
Claim 6
Dependent Claim
19 words
The device of claim 4 wherein said intrinsic region has a thickness of no more than about 500 nm.
Claim 7
Dependent Claim
19 words
The device of claim 4 wherein said intrinsic region has a thickness of no more than about 250 nm.
Claim 8
Dependent Claim
23 words
The device of claim 4 wherein the region of said amorphous silicon body in contact with said oxide film comprises microcrystalline amorphous silicon.
Claim 9
Dependent Claim
31 words
The device of claim 4 wherein the region of said amorphous silicon body in contact with said oxide film contains a bandgap increasing agent consisting of one of carbon and nitrogen.
Claim 10
Dependent Claim
17 words
The device of claim 1 wherein said layer comprises a substrate providing mechanical support for the device.
Claim 11
Dependent Claim
16 words
The device of claim 9 wherein said substrate comprises glass coated with an electrically conducting film.
Claim 12
Dependent Claim
20 words
The device of claim 9 wherein said substrate is selected from the group consisting of metals, metallic alloys, and silicon.
Claim 13
Dependent Claim
34 words
The device of claim 1 wherein said body of amorphous silicon comprises a doped film of one of p-type and n-type conductivities and said layer is crystalline silicon doped oppositely from said amorphous silicon.
Claim 14
Dependent Claim
19 words
The device of claim 12 wherein said doped amorphous silicon film is n-type and said crystalline silicon is p-type.
Claim 15
Dependent Claim
13 words
The device of claim 12 wherein said amorphous silicon film is microcrystalline silicon.
Claim 16
Dependent Claim
22 words
The device of claim 12 wherein said amorphous silicon film contains a bandgap increasing agent consisting of one of carbon and nitrogen.
Claim 17
Dependent Claim
31 words
The device of claim 1 including a second transparent film disposed on said oxide film opposite said amorphous silicon body for altering the optical interference characteristics of said oxide film alone.
Claim 18
Dependent Claim
26 words
The device of claim 16 wherein said second transparent film is selected from the group consisting of silicon dioxide, silicon nitride, magnesium fluoride, and calcium fluoride.
Claim 19
Dependent Claim
35 words
The device of claim 16 including a third transparent film disposed on said second transparent film opposite said oxide film for altering the optical interference characteristics of said oxide film and second transparent film together.
Claim 20
Dependent Claim
18 words
The device of claim 1 including a metallic current collector disposed on a portion of the oxide film.
Claim 21
Dependent Claim
15 words
The device of claim 1 including an ultraviolet light-transmitting glass substrate contacting said oxide film.
Claim 22
Dependent Claim
11 words
The device of claim 20 wherein said glass substrate is quartz.
Claim 23
Dependent Claim
12 words
The device of claim 20 wherein said oxide film is tin oxide.
Claim 24
Dependent Claim
37 words
The device of claim 20 wherein said body of amorphous silicon includes an essentially intrinsic region sandwiched between p-type and n-type regions, said three regions being disposed on said film for serial passage of light through them.
Claim 25
Dependent Claim
26 words
The device of claim 23 wherein the region in contact with said oxide film contains a bandgap increasing agent consisting of one of carbon and nitrogen.
Claim 26
Dependent Claim
19 words
The device of claim 23 wherein said intrinsic region has a thickness of no more than about 500 nm.
Claim 27
Dependent Claim
19 words
The device of claim 23 wherein said intrinsic region has a thickness of no more than about 250 nm.
Claim 28
Dependent Claim
29 words
The device of claim 20 including a second transparent film disposed on said substrate opposite said oxide film for altering the optical interference characteristics of said glass substrate alone.
Claim 29
Dependent Claim
22 words
The device of claim 27 wherein said second transparent film is selected from the group consisting of magnesium fluoride and calcium fluoride.
Claim 30
Dependent Claim
34 words
The device of claim 27 including a third transparent film disposed on said second transparent film opposite said glass substrate for altering the optical interference characteristics of said glass and second transparent film together.
References Cited (Backward Citations)
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