Patent US2440908A successfully refreshed from Google Patents.
Patent US4969031A successfully refreshed from Google Patents.
US4969031A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices and method for making the same
Assignee: Hitachi Ltd
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Filing: 1983-02-03
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Granted: 1990-11-06
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Expires: 2003-02-03
Abstract
Abstract A semiconductor device has an active layer in which a semiconductor element is formed by employing a silicon single crystal as a substrate. The present invention causes a tensile strain to remain in the active layer, thereby to improve the carrier mobility.
Inventors
- 👤 Yutaka Kobayashi
- 👤 Takaya Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:50
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10D30/6759; H10D30/751; H10D30/791; H10D30/798; H10D62/00; H10D62/40; H10D62/405; H10D62/50; H10D62/53; H10D62/80; H10D62/83; H10D62/834; H10P; H10P34/00; H10P34/40; H10P34/42; H10P36/00; H10P36/03; H10P95/00; H10P95/40; H10P95/402; H10P95/90
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
237 words
A semiconductor device having: an active layer of a semiconductor element; a silicon single-crystal layer of one conductivity type which includes the {100} face or {110} face and which constitutes a substrate for forming the active layer of a semiconductor element in a surface layer of said silicon single-crystal layer, said active layer including one principal surface of said silicon single-crystal layer, an oxide film which is formed on parts of the one principal surface of said substrate, a gate electrode which is formed on one of said parts of said oxide film, regions to have a conductivity type opposite to that of said silicon single-crystal layer, said regions being formed under exposed parts of said one principal surface of said substrate, and interconnection buses which are formed on said region; wherein said active layer is a surface layer of the silicon single-crystal layer that is melted and regrown in a liquid phase by irradiating the silicon single-crystal layer with a heat source for melting the surface layer including the one principal surface of the silicon single-crystal layer, whereby said active layer is formed with a remaining tensile strain in advance, said tensile strain being formed along a crystal orientation of the active layer, the crystal orientation being the direction along which current flows in the semiconductor element, the active layer being relatively thin as compared to the thickness of the remainder of the silicon single-crystal layer.
Claim 2
Dependent Claim
237 words
A semiconductor device having: an active layer of a semiconductor element; a silicon single-crystal layer of one conductivity type which includes the {100} face or {110} face and which constitutes a substrate for forming the active layer of a semiconductor element in a surface layer of said silicon single-crystal layer, said active layer including one principal surface of said silicon single-crystal layer, an oxide film which is formed on parts of the one principal surface of said substrate, a gate electrode which is formed on one of said parts of said oxide film, regions to have a conductivity type opposite to that of said silicon single-crystal layer, said regions being formed under exposed parts of said one principal surface of said substrate, and interconnection buses which are formed on said region; wherein said active layer is a surface layer of the silicon single-crystal layer that is melted and regrown in a liquid phase by irradiating the silicon single-crystal layer with a heat source for melting the surface layer including the one principal surface of the silicon single-crystal layer, whereby said active layer is formed with a remaining tensile strain in advance, said tensile strain being formed along a crystal orientation of the active layer, the crystal orientation being the direction along which current flows in the semiconductor element, the active layer being relatively thin as compared to the thickness of the remainder of the silicon single-crystal layer.
Claim 3
Dependent Claim
26 words
A semiconductor device according to claim 1, wherein said regions to have the opposite conductivity to that os said silicon single-crystal layer are activated by annealing.
Claim 4
Dependent Claim
216 words
A semiconductor device having: a silicon single-crystal layer which includes the {100} face or {110} face and which constitutes a substrate for forming an active layer of semiconductor element, an active layer of a semiconductor element formed on the silicon single-crystal layer, said active layer being of one conductivity type, an oxide film which is formed on parts of one principal surface of said active layer, a gate electrode which is formed on one of said parts of said oxide film, regions to have a conductivity type opposite to that of said active layer, said regions being formed under exposed parts of said one principal surface of said active layer, and interconnection buses which are formed on said regions; wherein said silicon single-crystal substrate layer, on which the active layer is formed, is doped with an impurity which has a covalent radius larger than that of silicon, and wherein said active layer, which is a silicon single-crystal layer, is grown on the silicon single-crystal layer and has a lattice constant smaller than that of the silicon single-crystal layer, whereby a remaining tensile strain is formed within said active layer, said tensile strain being formed along a crystal orientation of said active layer, said crystal orientation being in a direction of current flow in the semiconductor element.
Claim 5
Dependent Claim
216 words
A semiconductor device having: a silicon single-crystal layer which includes the {100} face or {110} face and which constitutes a substrate for forming an active layer of semiconductor element, an active layer of a semiconductor element formed on the silicon single-crystal layer, said active layer being of one conductivity type, an oxide film which is formed on parts of one principal surface of said active layer, a gate electrode which is formed on one of said parts of said oxide film, regions to have a conductivity type opposite to that of said active layer, said regions being formed under exposed parts of said one principal surface of said active layer, and interconnection buses which are formed on said regions; wherein said silicon single-crystal substrate layer, on which the active layer is formed, is doped with an impurity which has a covalent radius larger than that of silicon, and wherein said active layer, which is a silicon single-crystal layer, is grown on the silicon single-crystal layer and has a lattice constant smaller than that of the silicon single-crystal layer, whereby a remaining tensile strain is formed within said active layer, said tensile strain being formed along a crystal orientation of said active layer, said crystal orientation being in a direction of current flow in the semiconductor element.
Claim 6
Dependent Claim
186 words
A semiconductor device having: a first silicon layer which has the {100} face of the {110} face and which is doped with a first impurity, a layer which is doped with a second impurity and which is formed in a part of one principal surface of said first silicon layer, a second silicon layer which is doped with a third impurity and which is formed by vapor growth on said one principal surface including said layer doped with a second impurity, said second silicon layer constituting a silicon active layer of the device, an emitter region, a collector region and a base region which are formed in said second silicon layer, and interconnection buses which are formed on the respective regions; current flowing through the silicon active layer substantially in parallel with said one principal surface; wherein said first impurity is an impurity which has a covalent radius larger than that of silicon, said second impurity is an impurity which has a covalent radius larger than that of silicon, and said third impurity is an impurity which has a covalent radius smaller than that of silicon.
Claim 7
Dependent Claim
186 words
A semiconductor device having: a first silicon layer which has the {100} face of the {110} face and which is doped with a first impurity, a layer which is doped with a second impurity and which is formed in a part of one principal surface of said first silicon layer, a second silicon layer which is doped with a third impurity and which is formed by vapor growth on said one principal surface including said layer doped with a second impurity, said second silicon layer constituting a silicon active layer of the device, an emitter region, a collector region and a base region which are formed in said second silicon layer, and interconnection buses which are formed on the respective regions; current flowing through the silicon active layer substantially in parallel with said one principal surface; wherein said first impurity is an impurity which has a covalent radius larger than that of silicon, said second impurity is an impurity which has a covalent radius larger than that of silicon, and said third impurity is an impurity which has a covalent radius smaller than that of silicon.
Claim 8
Dependent Claim
247 words
A semiconductor device having: a first silicon layer which has the {100} face or the {110} face and which is doped with a first impurity, a layer which is doped with a second impurity and which is formed in a part of one principal surface of said first silicon layer, a second silicon layer which is doped with a third impurity and which is formed by vapor growth on said one principal surface including said layer doped with said second impurity, a third silicon layer which is formed by doping said second silicon layer with a fourth impurity, a fourth silicon layer which is formed by doping said third silicon layer with a fifth impurity, a collector region, a base region and an emitter region which are respectively formed in said second, third and fourth silicon layers, and interconnection buses which are formed on the respective regions; current flowing through a silicon active layer substantially orthogonally to said one principal surface; wherein said first impurity is an impurity which has a covalent radius smaller than that of silicon, said second impurity is an impurity which has a covalent radius larger than that of said silicon, said third impurity is an impurity which has a covalent radius larger than that of said silicon, said fourth impurity is an impurity which has a covalent radius larger than that of said silicon, and said fifth impurity is an impurity which has a covalent radius smaller than that of said silicon.
Claim 9
Dependent Claim
247 words
A semiconductor device having: a first silicon layer which has the {100} face or the {110} face and which is doped with a first impurity, a layer which is doped with a second impurity and which is formed in a part of one principal surface of said first silicon layer, a second silicon layer which is doped with a third impurity and which is formed by vapor growth on said one principal surface including said layer doped with said second impurity, a third silicon layer which is formed by doping said second silicon layer with a fourth impurity, a fourth silicon layer which is formed by doping said third silicon layer with a fifth impurity, a collector region, a base region and an emitter region which are respectively formed in said second, third and fourth silicon layers, and interconnection buses which are formed on the respective regions; current flowing through a silicon active layer substantially orthogonally to said one principal surface; wherein said first impurity is an impurity which has a covalent radius smaller than that of silicon, said second impurity is an impurity which has a covalent radius larger than that of said silicon, said third impurity is an impurity which has a covalent radius larger than that of said silicon, said fourth impurity is an impurity which has a covalent radius larger than that of said silicon, and said fifth impurity is an impurity which has a covalent radius smaller than that of said silicon.
Claim 10
Dependent Claim
13 words
A semiconductor device according to claim 4, wherein said first impurity includes Sb.
Claim 11
Dependent Claim
15 words
A semiconductor device according to claim 4, wherein said first impurity includes Sn or Ge.
Claim 12
Dependent Claim
43 words
A semiconductor device according to claim 4, wherein a tensile strain is formed within the active layer in a direction substantially in parallel with said one principal surface so as to be in the direction of current flowing through the silicon active layer.
Claim 13
Dependent Claim
42 words
A semiconductor device according to claim 5, wherein a tensile strain is formed within the active layer in a direction substantially orthogonally to the one principal surface so as to be in the direction of current flowing through the silicon active layer.
Claim 14
Dependent Claim
33 words
A semiconductor device according to claim 3, wherein said active layer is doped with an impurity, the covalent radius of the impurity doped into the active layer being smaller than that of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |