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US4968375A Expired / Lapsed US ⏱️ 0.0 years remaining

Etching apparatus

Assignee: Toshiba Corp
•
Filing: 1989-11-08
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Granted: 1990-11-06
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Expires: 2009-11-08
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Abstract

Abstract A semiconductor substrate etching apparatus is disclosed. In this apparatus, a semiconductor substrate is mounted on the upper surface of a first vacuum chuck, an etching solution is supplied to a groove of a roller of a semiconductor substrate end surface etching mechanism, which covers the end surface of the semiconductor substrate, and the first vacuum chuck and the roller are rotated in the opposite directions. The end surface of the semiconductor substrate is brought into contact with the etching solution. The etching solution is then transferred onto the end surface of the substrate, thus performing etching of the end surface.

Inventors

  • 👤 Mitsuo Sato
  • 👤 Kiyoshi Yoshikawa
  • 👤 Takashi Fujiwara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 20:47
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0422; H10P72/0426; H10P72/0406; H10P72/0408; H10P72/0411; H10P72/0414; H10P72/0424; H10P72/70; H10P72/78

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 322 words
A semiconductor substrate etching apparatus comprising: a rotatable first vacuum chuck having an elastic seal member, mounted around a peripheral portion of an upper surface, for horizontally placing and holding a semiconductor substrate in contact with one major surface thereof, and a hollow portion therein as an exhaust path, a plurality of exhaust holes being formed in said first vacuum chuck so as to communicate with the exhaust path and extend to the upper surface; a semiconductor substrate end surface etching mechanism having a roller arranged near the semiconductor substrate, an end surface of the semiconductor substrate being inserted in a groove of said roller in a non-contact state, and means for supplying an etching solution for etching the end surface of the semiconductor substrate to said groove; a rotatable or non-rotatable second vacuum chuck, which can be horizontally and vertically moved and, which can hold the other major surface of the semiconductor substrate by suction and move the semiconductor substrate to an upper position a predetermined distance away from the upper surface of said first vacuum chuck; a semiconductor substrate cleaning mechanism having an end surface cleaning nozzle, arranged to oppose the end surface of the semiconductor substrate held by said first vacuum chuck, for spraying a cleaning solution on the end surface of the semiconductor substrate, and a cleaning nozzle, arranged to oppose a side surface of a region defined by the predetermined distance between the upper surface of said first vacuum chuck and the other major surface of the semiconductor substrate held by said second vacuum chuck, for spraying a cleaning solution on the region; and a semiconductor substrate drying mechanism for drying the one major surface of the semiconductor substrate by spraying a drying gas from said plurality of exhaust holes of said first vacuum chuck on the one major surface, and for drying the other major surface of the semiconductor substrate held by said first vacuum chuck.
Claim 2
Dependent Claim 322 words
A semiconductor substrate etching apparatus comprising: a rotatable first vacuum chuck having an elastic seal member, mounted around a peripheral portion of an upper surface, for horizontally placing and holding a semiconductor substrate in contact with one major surface thereof, and a hollow portion therein as an exhaust path, a plurality of exhaust holes being formed in said first vacuum chuck so as to communicate with the exhaust path and extend to the upper surface; a semiconductor substrate end surface etching mechanism having a roller arranged near the semiconductor substrate, an end surface of the semiconductor substrate being inserted in a groove of said roller in a non-contact state, and means for supplying an etching solution for etching the end surface of the semiconductor substrate to said groove; a rotatable or non-rotatable second vacuum chuck, which can be horizontally and vertically moved and, which can hold the other major surface of the semiconductor substrate by suction and move the semiconductor substrate to an upper position a predetermined distance away from the upper surface of said first vacuum chuck; a semiconductor substrate cleaning mechanism having an end surface cleaning nozzle, arranged to oppose the end surface of the semiconductor substrate held by said first vacuum chuck, for spraying a cleaning solution on the end surface of the semiconductor substrate, and a cleaning nozzle, arranged to oppose a side surface of a region defined by the predetermined distance between the upper surface of said first vacuum chuck and the other major surface of the semiconductor substrate held by said second vacuum chuck, for spraying a cleaning solution on the region; and a semiconductor substrate drying mechanism for drying the one major surface of the semiconductor substrate by spraying a drying gas from said plurality of exhaust holes of said first vacuum chuck on the one major surface, and for drying the other major surface of the semiconductor substrate held by said first vacuum chuck.
Claim 3
Dependent Claim 27 words
The apparatus according to claim 1, wherein said exhaust holes are inclined with respect to the upper surface and extend to a periphery of the upper surface.

References Cited (Backward Citations)

US4350562A Cited
US4339297A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-11-05 1994-05-07 1994-11-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-11-05 1998-05-07 1998-11-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-11-05 2002-05-07 2002-11-06 $7700.00 Window Closed / Lapsed

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