US4967229A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming dicing lines on wafer
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1989-04-05
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Granted: 1990-10-30
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Expires: 2009-04-05
Abstract
Abstract A process for forming dicing lines on a wafer which comprises: exposing a wafer region in which a dicing line pattern has not been formed to light irradiated through and patterned by a reticle for forming dicing lines; the reticle having a nonpatterned region of the same size as a device pattern region of a reticle for forming a device pattern on the wafer and a dicing zone which is in contact with the periphery of the nonpatterned region.
Inventors
- 👤 Satoshi Akutagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:37
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
78 words
A process for forming dicing lines on a wafer, which comprises: exposing a wafer region, in which a dicing line pattern has not been formed, to light irradiated through and patterned by a reticle for forming dicing lines, said reticle having a nonpatterned region of the same size as a device pattern region of a separate reticle for forming a device pattern on the wafer and a dicing zone in contact with a periphery of the nonpatterned region.
Claim 2
Dependent Claim
78 words
A process for forming dicing lines on a wafer, which comprises: exposing a wafer region, in which a dicing line pattern has not been formed, to light irradiated through and patterned by a reticle for forming dicing lines, said reticle having a nonpatterned region of the same size as a device pattern region of a separate reticle for forming a device pattern on the wafer and a dicing zone in contact with a periphery of the nonpatterned region.
Claim 3
Dependent Claim
46 words
A process according to claim 1, further comprising, as to the circumferential region of a wafer in which a dicing line pattern has not been formed, exposing the circumferential region of the wafer to light irradiated through and patterned by said reticle for forming dicing lines.
Claim 4
Dependent Claim
79 words
A process according to claim 1, further comprising, as to any part of a central region of the wafer in which a dicing line pattern has not been formed during forming of an insertion pattern in a device pattern region of the wafer by using an insertion pattern reticle different from a device pattern reticle, exposing each said part of said central region of the wafer to light irradiated through and patterned by said reticle for forming dicing lines.
References Cited (Backward Citations)
US4542397A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-29 | 1994-04-30 | 1994-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-29 | 1998-04-30 | 1998-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-29 | 2002-04-30 | 2002-10-30 | $7700.00 | Window Closed / Lapsed |