System for mounting and cooling power semiconductor devices

Claim 3

The system of claim 1 wherein said second thermal heat sink means is a solid block designed to increase in temperature during the transient period and reach a temperature which is proximate to but does not exceed said maximum junction temperature.

Claim 4

The system of claim 2 wherein said second thermal heat sink means includes a separate block for each semiconductor device.

Claim 5

The system of claim 3 wherein said first heat sink means comprises air-cooled fins.

Claim 6

The system of claim 3 wherein said first heat sink means comprises liquid cooling means.

Claim 7

Semiconductor apparatus, comprising: a disc type semiconductor device having opposing first and second pole faces; first conducting terminal means in thermal and electrical conductive contact with the first pole face of said device; first thermal heat sink means, in thermal conductive contact with said first terminal means, for receiving heat generated within said semiconductor device during device operation; second thermal heat sink means, in thermal conductive contact with said semiconductor device, for receiving heat generated within said semiconductor device during device operation; means for applying a compressive mounting force to compress said second heat sink means and said semiconductor device therebetween; and said first and second heat sink means having respective first and second predetermined heat capacities to maintain a semiconductor device junction temperature at or below a predetermined maximum junction temperature during predetermined transient and steady-state periods of device operation, said semiconductor device generating heat at a greater rate during said transient operation period than during said steady-state operation period, said first and second predetermined heat capacities being selected such that of the heat generated within the semiconductor device a percentage of heat received by said second thermal heat sink means is greater during the predetermined transient period than during the predetermined steady-state period.

Claim 8

Semiconductor apparatus, comprising: a disc type semiconductor device having opposing first and second pole faces; first conducting terminal means in thermal and electrical conductive contact with the first pole face of said device; first thermal heat sink means, in thermal conductive contact with said first terminal means, for receiving heat generated within said semiconductor device during device operation; second thermal heat sink means, in thermal conductive contact with said semiconductor device, for receiving heat generated within said semiconductor device during device operation; means for applying a compressive mounting force to compress said second heat sink means and said semiconductor device therebetween; and said first and second heat sink means having respective first and second predetermined heat capacities to maintain a semiconductor device junction temperature at or below a predetermined maximum junction temperature during predetermined transient and steady-state periods of device operation, said semiconductor device generating heat at a greater rate during said transient operation period than during said steady-state operation period, said first and second predetermined heat capacities being selected such that of the heat generated within the semiconductor device a percentage of heat received by said second thermal heat sink means is greater during the predetermined transient period than during the predetermined steady-state period.

Claim 9

The semiconductor apparatus of claim 6 further comprising a second conducting terminal means and wherein said second thermal heat sink means is in thermal and electrical conductive contact with said semiconductor device and said second terminal means.

Claim 10

The semiconductor apparatus of claim 6 wherein said first heat sink means comprises air-cooled fins.

Claim 11

The semiconductor apparatus of claim 6 wherein said first heat sink means comprises liquid cooling means.

Claim 12

The semiconductor apparatus of claim 9 wherein said liquid cooling means comprises a plate having liquid coolant flow passages therein to receive a liquid coolant.

Claim 13

The semiconductor apparatus of claim 10 wherein said plate is composed of copper and said liquid coolant is water.

Claim 14

The semiconductor apparatus of claim 6 wherein said second heat sink means comprises a block having a predetermined mass.

Claim 15

The semiconductor apparatus of claim 12 wherein said block has a sufficient heat capacity to accept a significant portion of the heat generated by said semiconductor device during the transient operation period and still prevent the temperature of said semiconductor device from exceeding the predetermined maximum junction temperature.

Claim 16

The semiconductor apparatus of claim 13 wherein said first heat sink means comprises air-cooled fins.

Claim 17

The semiconductor apparatus of claim 13 wherein said first heat sink means comprises liquid cooling means.

Claim 18

The semiconductor apparatus of claim 15 wherein said liquid cooling means comprises a plate having liquid coolant flow passages therein.

Claim 19

The semiconductor apparatus of claim 16 wherein said plate is composed of copper and said liquid coolant is water.

Claim 20

The semiconductor apparatus of claim 12 wherein said first heat sink means comprises air-cooled fins.

Claim 21

The semiconductor apparatus of claim 12 wherein said first heat sink means comprises liquid cooling means.

Claim 22

The semiconductor apparatus of claim 19 wherein said liquid cooling means comprises a plate having liquid coolant flow passages therein.

Claim 23

The semiconductor apparatus of claim 20 wherein said plate is composed of copper and said liquid coolant is water.

Claim 24

The semiconductor apparatus of claim 6 wherein said semiconductor device is an SCR.

Claim 25

The semiconductor apparatus of claim 6 further comprising means for measuring a temperature of said second heat sink means.

Claim 26

The semiconductor apparatus of claim 6 further including electrical insulating means interposed between said first terminal means and said first heat sink means to electrically isolate said first heat sink means from said first terminal means.

Claim 27

Semiconductor apparatus, comprising: a first disc type semiconductor device; a second disc type semiconductor device, said first and second semiconductor devices each having opposing pole faces; first conducting terminal means in thermal and electrical contact with one pole face of each said semiconductor device; second conducting terminal means; first thermal heat sink means, in thermal conductive contact with said first terminal means, for receiving heat generated within said first and second semiconductor devices during device operation; second thermal heat sink means, interposed between the other pole face of each said first and second semiconductor device and said second terminal means, for receiving heat generated within each said first and second semiconductor device during device operation, said second heat sink means being in electrical conductive contact with said second terminal means and in thermal and electrical conductive contact with the respective other pole faces of said first and second semiconductor devices, said second heat sink means providing an electrical conductive path from each said other pole face of said first and second semiconductor devices to said second terminal means; means for applying a compressive mounting force across said first and second terminal means to compress said second heat sink means and said first and second semiconductor devices therebetween; and said first and second heat sink means having respective first and second predetermined heat capacities to maintain a junction temperature in each said first and second semiconductor device at or below a predetermined maximum junction temperature during predetermined transient and steady-state periods of device operation, said first and second semiconductor devices generating heat at a greater rate during said transient operation period than during said steady-state operation period, said first and second predetermined heat capacities being selected such that of the heat generated within said first and second semiconductor devices a percentage of heat received by said second thermal heat sink means is greater during the predetermined transient period than during the predetermined steady-state period.

Claim 28

Semiconductor apparatus, comprising: a first disc type semiconductor device; a second disc type semiconductor device, said first and second semiconductor devices each having opposing pole faces; first conducting terminal means in thermal and electrical contact with one pole face of each said semiconductor device; second conducting terminal means; first thermal heat sink means, in thermal conductive contact with said first terminal means, for receiving heat generated within said first and second semiconductor devices during device operation; second thermal heat sink means, interposed between the other pole face of each said first and second semiconductor device and said second terminal means, for receiving heat generated within each said first and second semiconductor device during device operation, said second heat sink means being in electrical conductive contact with said second terminal means and in thermal and electrical conductive contact with the respective other pole faces of said first and second semiconductor devices, said second heat sink means providing an electrical conductive path from each said other pole face of said first and second semiconductor devices to said second terminal means; means for applying a compressive mounting force across said first and second terminal means to compress said second heat sink means and said first and second semiconductor devices therebetween; and said first and second heat sink means having respective first and second predetermined heat capacities to maintain a junction temperature in each said first and second semiconductor device at or below a predetermined maximum junction temperature during predetermined transient and steady-state periods of device operation, said first and second semiconductor devices generating heat at a greater rate during said transient operation period than during said steady-state operation period, said first and second predetermined heat capacities being selected such that of the heat generated within said first and second semiconductor devices a percentage of heat received by said second thermal heat sink means is greater during the predetermined transient period than during the predetermined steady-state period.

Claim 29

The semiconductor apparatus of claim 25 wherein each said first and second semiconductor device has a positive and a negative pole face and said first terminal means is in contact with the positive pole face of one semiconductor device and the negative pole face of the other semiconductor device.

Claim 30

The semiconductor apparatus of claim 25 wherein said second heat sink means comprises a first and a separate second block in both thermal and electrical conductive contact with said first and second semiconductor devices, respectively.

Claim 31

The semiconductor apparatus of claim 27 wherein said first heat sink means comprises a plate having liquid coolant flow passages therein to receive a liquid coolant.

Claim 32

The semiconductor apparatus of claim 28 wherein said plate is composed of copper and said liquid coolant is water.

Claim 33

Semiconductor apparatus, comprising: a first disc type semiconductor device; a second disc type semiconductor device, said first and second semiconductor devices each having a positive and a negative pole face; a first conducting terminal bar having opposing first and second faces, said first face being in thermal and electrical conductive contact with the positive pole face of one semiconductor device and the negative pole face of the other semiconductor device; a second conducting terminal bar; first thermal heat sink means, in thermal conductive contact with the second face of said first terminal bar, for receiving heat generated within said first and second semiconductor devices during device operation; a layer of insulating material interposed between said first head sink means and said first terminal bar to electrically isolate said first heat sink means for said first terminal bar; second thermal heat sink means, interposed between said first semiconductor device and said second terminal bar, for receiving heat generated within said first semiconductor device during device operation, said second heat sink means being in electrical conductive contact with said second terminal bar and in thermal and electrical conductive contact with said first semiconductor device, said second heat sink means providing an electrical conductive path from said first semiconductor device to said second terminal bar; third thermal heat sink means, interposed between said second semiconductor device and said second terminal bar, for receiving heat generated within said second semiconductor device during device operation, said third heat sink means being in electrical conductive contact with said second terminal bar and in thermal and electrical conductive contact with said second semiconductor device, said third heat sink means providing an electrical conductive path from said semiconductor device first pole face to said second terminal bar; means for applying a compressive mounting force across said first and second terminal bars to compress said second and third heat sink means and said first and second semiconductor devices therebetween; and said first, second and third heat sink means having respective first, second and third predetermined heat capacities to maintain a junction temperature of each said first and second semiconductor device at or below a predetermined maximum junction temperature during predetermined transient and steady-state periods of device operation, said first and second semiconductor devices generating heat at a greater rate during said transient operation period than during said steady-state operation period, said first, second and third predetermined heat capacities being selected such that of the heat generated within said first and second semiconductor devices a percentage of heat received by each said second and third heat sink means is greater during the predetermined transient period than during the predetermined steady-state period.

Claim 34

Semiconductor apparatus, comprising: a first disc type semiconductor device; a second disc type semiconductor device, said first and second semiconductor devices each having a positive and a negative pole face; a first conducting terminal bar having opposing first and second faces, said first face being in thermal and electrical conductive contact with the positive pole face of one semiconductor device and the negative pole face of the other semiconductor device; a second conducting terminal bar; first thermal heat sink means, in thermal conductive contact with the second face of said first terminal bar, for receiving heat generated within said first and second semiconductor devices during device operation; a layer of insulating material interposed between said first head sink means and said first terminal bar to electrically isolate said first heat sink means for said first terminal bar; second thermal heat sink means, interposed between said first semiconductor device and said second terminal bar, for receiving heat generated within said first semiconductor device during device operation, said second heat sink means being in electrical conductive contact with said second terminal bar and in thermal and electrical conductive contact with said first semiconductor device, said second heat sink means providing an electrical conductive path from said first semiconductor device to said second terminal bar; third thermal heat sink means, interposed between said second semiconductor device and said second terminal bar, for receiving heat generated within said second semiconductor device during device operation, said third heat sink means being in electrical conductive contact with said second terminal bar and in thermal and electrical conductive contact with said second semiconductor device, said third heat sink means providing an electrical conductive path from said semiconductor device first pole face to said second terminal bar; means for applying a compressive mounting force across said first and second terminal bars to compress said second and third heat sink means and said first and second semiconductor devices therebetween; and said first, second and third heat sink means having respective first, second and third predetermined heat capacities to maintain a junction temperature of each said first and second semiconductor device at or below a predetermined maximum junction temperature during predetermined transient and steady-state periods of device operation, said first and second semiconductor devices generating heat at a greater rate during said transient operation period than during said steady-state operation period, said first, second and third predetermined heat capacities being selected such that of the heat generated within said first and second semiconductor devices a percentage of heat received by each said second and third heat sink means is greater during the predetermined transient period than during the predetermined steady-state period.