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US4965225A
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Method of stabilizing amorphous semiconductors
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1989-09-28
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Granted: 1990-10-23
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Expires: 2009-09-28
Abstract
Abstract An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.
Inventors
- 👤 Hideo Yamagishi
- 👤 William A. Nevin
- 👤 Hitoshi Nishio
- 👤 Keiko Miki
- 👤 Kazunori Tsuge
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:12
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10F77/1668; H10F71/00; H10F71/10; H10F71/103; H10F71/134; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S136/00; Y10S136/29
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
25 words
A method of stabilizing an amorphous silicon semiconductor comprising exposing it intermittently to light of high intensity at a temperature not lower than 150° C.
Claim 2
Independent Claim
25 words
A method of stabilizing an amorphous silicon semiconductor comprising exposing it intermittently to light of high intensity at a temperature not lower than 150° C.
Claim 3
Dependent Claim
31 words
The method of stabilizing an amorphous silicon semiconductor as claimed in claim 1, in which the stabilization is carried out while the amorphous silicon semiconductor comprises a thin-film amorphous semiconductor device.
Claim 4
Dependent Claim
42 words
The method of stabilizing an amorphous silicon semiconductor as claimed in claim 2, in which the thin-film amorphous semiconductor device comprises a three-layer pin assembly and the stabilization is carried out during or after completion of fabrication of the three-layer pin assembly.
Claim 5
Dependent Claim
22 words
The method of stabilizing an amorphous silicon semiconductor as claimed in claim 3, in which the exposure light is a pulsed light.
Claim 6
Dependent Claim
29 words
The method of stabilizing an amorphous silicon semiconductor as claimed in claim 4, in which the pulsed light has an intensity of not less than 10 W/cm 2 .
Claim 7
Dependent Claim
22 words
The method of stabilizing an amorphous silicon semiconductor as claimed in claim 2, in which the exposure light is a pulsed light.
Claim 8
Dependent Claim
29 words
The method of stabilizing an amorphous silicon semiconductor as claimed in claim 6, in which the pulsed light has an intensity of not less than 10 W/cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-22 | 1994-04-23 | 1994-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-22 | 1998-04-23 | 1998-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-22 | 2002-04-23 | 2002-10-23 | $7700.00 | Window Closed / Lapsed |