Charge transfer device and method for producing such a device

Claim 1

Method for producing a charge transfer device comprising the following different successive phases: a first phase of producing a layer of insulating material on one face of substrate made of amorphous semi-conductor material; a second phase of depositing on the layer of insulating material a first layer of a conductive material; a third phase of engraving in the said first layer of conductive material at least two lower electrodes separated by a space; a fourth phase of producing on the lower electrodes a layer of an insulating material; a fifth phase of producing on the assembly thus obtained a layer of a conductive material; a sixth phase, in the layer of conductive material, deposited during fifth phase, of engraving the conductive material produced in said fifth phase to produce a first upper electrode part covering a first portion of the space and a portion of one of the lower electrodes; a seventh phase of producing a layer of the same material as during the fifth phase on the assembly of the first upper electrode part and the lower electrodes; and an eighth phase of eroding or oxidizing the layer of conductive material produced in the seventh phase in order to produce a conductive second upper electrode part covering a remaining second portion of the space between the first upper electrode part and the layer of insulating material formed on the other lower electrode.

Claim 3

A method for producing a charge transfer device, comprising the following different successvie steps: a first step of producing an insulating layer on one face of a semiconductor substrate; a second step of depositing a first layer of conductive material on said insulating layer; a third step of engraving in the first conductive layer at least two lower level electrodes separated by a space; a fourth step of producing on the lower level electrodes a layer of insulating material; a fifth step of depositing a second layer of conductive material; a sixth step of engraving the second conductive layer so as to define a first portion of an upper electrode in the space between said two lower level electrodes, while leaving at most a narrow uncovered interval between said first portion and each of said two lower level electrodes; a seventh step of depositing a third layer of conductive material in the said narrow interval and above said narrow interval as well as above the upper and lower electrodes; and an eighth step of eroding or oxidizing the third layer so as to completely remove the third layer above at least a portion of said lower level electrodes without removing the third layer in the said narrow interval.

Claim 4

A method for producing a charge transfer device, comprising the following different successvie steps: a first step of producing an insulating layer on one face of a semiconductor substrate; a second step of depositing a first layer of conductive material on said insulating layer; a third step of engraving in the first conductive layer at least two lower level electrodes separated by a space; a fourth step of producing on the lower level electrodes a layer of insulating material; a fifth step of depositing a second layer of conductive material; a sixth step of engraving the second conductive layer so as to define a first portion of an upper electrode in the space between said two lower level electrodes, while leaving at most a narrow uncovered interval between said first portion and each of said two lower level electrodes; a seventh step of depositing a third layer of conductive material in the said narrow interval and above said narrow interval as well as above the upper and lower electrodes; and an eighth step of eroding or oxidizing the third layer so as to completely remove the third layer above at least a portion of said lower level electrodes without removing the third layer in the said narrow interval.