US4962087A
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Epitaxial superconducting scructure on lattice matched lanthanum orthogallate
Assignee: Northrop Grumman Guidance and Electronics Co Inc
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Filing: 1988-03-04
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Granted: 1990-10-09
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Expires: 2008-03-04
Abstract
Abstract A thin film superconducting device is described in which the substrate is a single or mixed single crystal of lanthanum orthogallate grown from a pure melt of lanthanum, gallium and additive oxides. A portion of the gallium single crystal can be replaced by Sc, Al or In and/or a portion of the lanthanum can be replaced by a rare earth element of smaller ionic radius than lanthanum to allow for manipulation of the lattice constant.
Inventors
- 👤 Roger F. Belt
- 👤 Robert Uhrin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:23
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604; Y; Y10; Y10S; Y10S420/00; Y10S420/901; Y10S505/00; Y10S505/725; Y10S505/729
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
82 words
In a superconducting device comprising a high Tc superconducting thin film of metal oxide based perovskite deposited on a crystalline substrate, the improvement which comprises providing as the crystalline substrate of said device (1) monocrystalline lanthanum orthogallate grown from a pure melt of lanthanum and gallium oxides while controlling the major crystallographic direction of solidification or (2) a mixed single crystal of lanthanum orthogallate grown from a melt of lanthanum, gallium and additive oxides while controlling the major crystallographic direction of solidification.
Claim 2
Dependent Claim
82 words
In a superconducting device comprising a high Tc superconducting thin film of metal oxide based perovskite deposited on a crystalline substrate, the improvement which comprises providing as the crystalline substrate of said device (1) monocrystalline lanthanum orthogallate grown from a pure melt of lanthanum and gallium oxides while controlling the major crystallographic direction of solidification or (2) a mixed single crystal of lanthanum orthogallate grown from a melt of lanthanum, gallium and additive oxides while controlling the major crystallographic direction of solidification.
Claim 3
Dependent Claim
14 words
The superconducting device of claim 1, wherein the crystalline substrate is monocrystalline lanthanum orthogallate.
Claim 4
Dependent Claim
62 words
The superconducting device of claim 1, wherein the mixed single crystal of lanthanum orthogallate has the following formula: R.sub.x La.sub.1-x Ga.sub.1-y Q.sub.y O.sub.3 wherein R is Y or a rare earth element of smaller ionic radius than La; Q is Sc, Al or In; and, x and y are the same or different and have a value of from 0.001 to 0.5.
Claim 5
Dependent Claim
14 words
The superconducting device of claim 3, wherein R is Gd, Yb, Lu or Y.
Claim 6
Dependent Claim
10 words
The superconducting device of claim 3, wherein Q is Al.
Claim 7
Dependent Claim
10 words
The superconducting device of claim 3, wherein Q is Sc.
Claim 8
Dependent Claim
10 words
The superconducting device of claim 3, wherein Q is In.
Claim 9
Dependent Claim
31 words
The superconducting device of claim 3, wherein the mixed single crystal of lanthanum orthogallate has the following formula: LaGa.sub.1-y Sc.sub.y O.sub.3 wherein y has a value of from 0.001 to 0.5.
Claim 10
Dependent Claim
31 words
The superconducting device of claim 3, wherein the mixed single crystal of lanthanum orthogallate has the following formula: LaGa.sub.1-y Al.sub.y O.sub.3 wherein y has a value of from 0.001 to 0.5.
Claim 11
Dependent Claim
31 words
The superconducting device of claim 3, wherein the mixed single crystal of lanthanum orthogallate has the following formula: LaGay.sub.1-y In.sub.y O.sub.3 wherein y has a value of from 0.001 to 0.5.
References Cited (Backward Citations)
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