Patent US4959699B2 successfully refreshed from Google Patents.
US4959699B2
Expired / Lapsed
US
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High power mosfet with low on-resistance and high breakdown voltage
Assignee: Individual
•
Filing: 1989-06-22
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Granted: 1999-01-19
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Expires: 2009-06-22
Abstract
No abstract record available.
Inventors
- 👤 Alexander Lidow
- 👤 Thomas Herman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/665; H10D30/662; H10D30/663; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/124; H10D62/126; H10D62/127; H10D62/13; H10D62/149; H10D62/151; H10D62/17; H10D62/393
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-18 | 2002-07-20 | 2003-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-18 | 2006-07-20 | 2007-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-18 | 2010-07-20 | 2011-01-19 | $7700.00 | Window Closed / Lapsed |