Conductive articles and processes for their preparation

Claim 2

An article capable of forming on heating a superconducting thin film having a superconducting transition temperature of greater than 30° K. comprising a substrate capable of withstanding temperatures required to form said thin film and a mixed metal oxide layer capable of crystallizing to form said thin film on heating characterized in that a readily etchable, thin lift-off layer is interposed between said substrate and said mixed metal oxide layer and is selected from amoung copper, copper oxide and oxides and carbonates of alkaline earth metals which are components of said mixed metal oxide.

Claim 3

An article according to claim 1 further characterized in that the substrate is a monocrystalline body.

Claim 4

An article according to claim 1 further characterized in that a protective coating overlies said mixed metal oxide layer.

Claim 5

An article according to claim 1 further characterized in that a layer of a photoresist overlies said mixed metal oxide layer.

Claim 6

An article according to claim 1 futher characterized in that said mixed metal oxide includes copper oxide and said lift-off layer consists essentially of copper oxide.

Claim 7

An article according to claim 5 further characterized in that said lift-off layer is not more than about 1,000 Å thick.

Claim 8

An article according to claim 1 further characterized in that said mixed metal oxide layer comprises a mixture of oxides selected from the group consisting of (a) a mixture of a rare earth oxide, an alkaline earth oxide or carbonate, and copper oxide, (b) a mixture of a heavy pnictide, an alkaline earth oxide or carbonate and copper oxide, and (c) a mixture of thallium oxide, a mixed alkaline earth oxide or carbonate and copper oxide.

Claim 9

An article according to claim 5 further characterized in that the proportions of the components of said mixed metal oxides are selected to form a crystalline compound superconductive layer upon heating to a temperature which causes compound formation and crystal growth of said mixed oxide layer.

Claim 10

An article according to claim 7 further characterized in that said lift-off layer is copper oxide.

Claim 11

An article according to claim 5 further characterized in that the metal of said mixed metal oxide layer is comprised of a rare earth, alkaline earth and copper oxide.

Claim 12

An article according to claim 5 further characterized in that the metal of said mixed metal oxide layer is comprised of bismuth, at least two alkaline earth elements and copper.

Claim 13

An article according to claim 1 further characterized in that said lift-off layer is in the order of about 250 to 750 Å thick.

Claim 14

A process comprising forming a mixed metal oxide layer capable of forming upon heating a conductive crystalline mixed metal oxide thin film having a superconductive transition temperature of greater then 30° K. comprising applying to a substrate capable of withstanding temperatures required to form said thin film a readily etchable, thin lift-off layer selected from amoung copper, copper oxide and oxides and carbonates of alkaline earth metals which are components of said mixed metal oxide and then forming said mixed metal oxide layer on said thin lift off layer.

Claim 15

A process comprising forming a mixed metal oxide layer capable of forming upon heating a conductive crystalline mixed metal oxide thin film having a superconductive transition temperature of greater then 30° K. comprising applying to a substrate capable of withstanding temperatures required to form said thin film a readily etchable, thin lift-off layer selected from amoung copper, copper oxide and oxides and carbonates of alkaline earth metals which are components of said mixed metal oxide and then forming said mixed metal oxide layer on said thin lift off layer.

Claim 16

A process according to claim 13 in which said lift-off layer is formed by applying to the substrate a metal organic compound consisting of a metal forming a permanent part of the lift-off layer and one or more organic ligands each having less than 30 carbon atoms and thermally decomposing said ligands to leave the desired metal containing lift-off layer.

Claim 17

A process according to claim 13 further characterized in that said mixed metal oxide layer is converted to said thin film by heating.

Claim 18

A process according to claim 13 further characterized in that said lift-off layer is copper oxide and the metal of the mixed metal-oxide is chosen from the group consisting of (a) a mixture of a rare earth, alkaline earth and copper (b) a mixture of a heavy pnictide, at least two alkaline earth elements and copper and (c) a mixture of thallium, at least two alkaline earth elements and copper.

Claim 19

A process according to claim 16 further characterized in that said mixture is of type (a) wherein the molar ratio of rare earth:alkaline earth:copper is 1:2:3.

Claim 20

A process according to claim 17 further characterized in that said rare earth is yttrium.

Claim 21

A process according to claim 13 further characterized in that said substrate is monocrystalline.

Claim 22

A process according to claim 13 further characterized in that said mixed oxide layer is coated with a protective coating.

Claim 23

A process according to claim 13 further including the steps of coating said mixed metal oxide layer with a photoresist layer, exposing said photoresist to radiation through a mask to define a pattern in said photoresist, developing said pattern, and chemically etching said mixed metal oxide layer and lift-off layer to leave the desired pattern essentially free of unwanted residue.

Claim 24

A process according to claim 21 further including heating said substrate to form a conductive crystalline compound in a pattern in accordance with said patterned mixed metal oxide layer.

Claim 25

A process according to claim 13 wherein said lift-off layer is in the order of about 250-1,000 Å thick.

Claim 26

A process comprising forming a mixed metal oxide layer on a substrate characterized by the steps of forming a copper oxide lift-off layer having a thickness of ≦1,000 Å on a monocrystalline substrate, forming on said copper oxide lift-off layer a mixed metal oxide layer selected from a rare earth alkaline earth copper oxide layer and a bismuth alkaline earth copper oxide layer which mixed metal oxide layer is capable of forming a superconducting thin film upon crystalline thereof at an elevated temperature, said substrate being selected to withstand said crystallization temperature.

Claim 27

A process comprising forming a mixed metal oxide layer on a substrate characterized by the steps of forming a copper oxide lift-off layer having a thickness of ≦1,000 Å on a monocrystalline substrate, forming on said copper oxide lift-off layer a mixed metal oxide layer selected from a rare earth alkaline earth copper oxide layer and a bismuth alkaline earth copper oxide layer which mixed metal oxide layer is capable of forming a superconducting thin film upon crystalline thereof at an elevated temperature, said substrate being selected to withstand said crystallization temperature.

Claim 28

A process according to claim 24 further characterized in that a pattern is chemically etched into said layers.

Claim 29

A process according to claim 25 further characterized in that subsequent to pattern formation, the resulting patterned mixed oxide layer is heated to form a patterned crystalline superconducting thin film.

Claim 30

A superconducting circuit made by the process according to claim 26.

Claim 31

A process of forming a patterned superconducting article which is essentially free of unwanted oxide residue comprising (a) forming on a substrate capable of withstanding the heating step recited below a lift-off layer having a thickness of ≦1,000 Å selected from the group consisting of copper and copper oxide; (b) forming a mixed metal oxide layer over said lift-off layer, said mixed metal oxide layer having a thickness of <5 μm and comprising copper oxide, said mixed metal oxide being capable of forming a superconducting compound having a superconducting transition temperature of greater than 30° K. upon heating thereof; (c) forming a pattern in said mixed metal oxide layer by means of application of a photoresist, exposure of the photoresist to radiation in accordance with said pattern, development of said pattern and chemical etching of said mixed oxide layer and underlying lift-off layer in accordance with said pattern; and (d) heating the patterned mixed metal oxide to a temperature sufficient to cause formation and crystal growth of the superconducting compound.

Claim 32

A process of forming a patterned superconducting article which is essentially free of unwanted oxide residue comprising (a) forming on a substrate capable of withstanding the heating step recited below a lift-off layer having a thickness of ≦1,000 Å selected from the group consisting of copper and copper oxide; (b) forming a mixed metal oxide layer over said lift-off layer, said mixed metal oxide layer having a thickness of <5 μm and comprising copper oxide, said mixed metal oxide being capable of forming a superconducting compound having a superconducting transition temperature of greater than 30° K. upon heating thereof; (c) forming a pattern in said mixed metal oxide layer by means of application of a photoresist, exposure of the photoresist to radiation in accordance with said pattern, development of said pattern and chemical etching of said mixed oxide layer and underlying lift-off layer in accordance with said pattern; and (d) heating the patterned mixed metal oxide to a temperature sufficient to cause formation and crystal growth of the superconducting compound.

Claim 33

The process according to claim 28 further characterized in that the lift-off layer is copper oxide and the metal of the mixed metal oxide is selected from the group consisting of (a) a yttrium, an alkaline earth and copper, (b) a bismuth, at least two alkaline earth metals and copper, and (c) a thallium at least two alkaline earth metals and copper.

Claim 34

An article capable of forming on heating a superconducting thin film of less than 5 μm in thickness having a superconducting transition temperature of greater than 30° K. comprising a substrate capable of withstanding heating to form the thin film and a mixed metal oxide layer consisting essentially of a mixture of a rare earth oxide, an alkaline earth oxide or carbonate, and copper oxide, characterized in that a lift off layer of a thickness of up to 1000 Å consisting essentially of copper oxide is interposed between said substrate and said mixed metal oxide layer.

Claim 35

An article capable of forming on heating a superconducting thin film of less than 5 μm in thickness having a superconducting transition temperature of greater than 30° K. comprising a substrate capable of withstanding heating to form the thin film and a mixed metal oxide layer consisting essentially of a mixture of a rare earth oxide, an alkaline earth oxide or carbonate, and copper oxide, characterized in that a lift off layer of a thickness of up to 1000 Å consisting essentially of copper oxide is interposed between said substrate and said mixed metal oxide layer.

Claim 36

A process comprising forming a mixed metal oxide layer capable of forming on heating a thin film of less than 5 μm in thickness having a superconducting transition temperature of greater than 30° K. consisting essentially of a mixture of a rare earth oxide, an alkaline earth oxide or carbonate, and copper oxide, comprising applying to a substrate capable of withstanding temperatures required to form said thin film a lift off layer of a thickness of up to 1000 Å consisting essentially of copper oxide and then forming said mixed metal oxide layer on said thin lift-off layer.

Claim 37

A process comprising forming a mixed metal oxide layer capable of forming on heating a thin film of less than 5 μm in thickness having a superconducting transition temperature of greater than 30° K. consisting essentially of a mixture of a rare earth oxide, an alkaline earth oxide or carbonate, and copper oxide, comprising applying to a substrate capable of withstanding temperatures required to form said thin film a lift off layer of a thickness of up to 1000 Å consisting essentially of copper oxide and then forming said mixed metal oxide layer on said thin lift-off layer.